| Anzahl | Privatkunde |
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| 10+ | 2.73 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.32 EUR |
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Technische Details ZXMP3A17DN8TA Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.28nC @ 5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMP3A17DN8TA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
ZXMP3A17DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 4.4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.28nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ZXMP3A17DN8TA | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -3.6A; Idm: -16.2A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -16.2A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
ZXMP3A17DN8TA | Diodes Zetex |
Trans MOSFET P-CH 30V 3.4A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ZXMP3A17DN8TA |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.28nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2P-CH 30V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.28nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMP3A17DN8TA |
![]() |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.6A; Idm: -16.2A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -16.2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.6A; Idm: -16.2A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -16.2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMP3A17DN8TA |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET P-CH 30V 3.4A 8-Pin SO T/R
Trans MOSFET P-CH 30V 3.4A 8-Pin SO T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH




