| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.046 EUR |
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Technische Details DMN53D0LW-13 Diodes Zetex
Description: MOSFET N-CH 50V 360MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V.
Weitere Produktangebote DMN53D0LW-13 nach Preis ab 0.054 EUR bis 0.63 EUR
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DMN53D0LW-13 | Diodes Incorporated |
 Description: MOSFET N-CH 50V 360MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN53D0LW-13 | Diodes Incorporated |
MOSFETs FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF |
auf Bestellung 17768 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN53D0LW-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 360MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V
Description: MOSFET N-CH 50V 360MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45.8 pF @ 25 V
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.069 EUR |
| 30000+ | 0.068 EUR |
| 50000+ | 0.061 EUR |
| 100000+ | 0.054 EUR |
| DMN53D0LW-13 |
|
Hersteller: Diodes Incorporated
MOSFETs FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF
MOSFETs FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF
auf Bestellung 17768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.63 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.15 EUR |
| 2500+ | 0.13 EUR |
| 5000+ | 0.11 EUR |