DMHC4035LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 0.56 EUR |
| 5000+ | 0.52 EUR |
| 7500+ | 0.5 EUR |
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Technische Details DMHC4035LSD-13 Diodes Incorporated
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMHC4035LSD-13 nach Preis ab 0.65 EUR bis 2.16 EUR
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DMHC4035LSD-13 | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 1.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N and 2 P-Channel (Full Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 8933 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMHC4035LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 8933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.37 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |