DMP3125L-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.1 EUR |
| 15000+ | 0.098 EUR |
| 21000+ | 0.094 EUR |
| 30000+ | 0.09 EUR |
| 75000+ | 0.082 EUR |
| 150000+ | 0.081 EUR |
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Technische Details DMP3125L-7 Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V.
Weitere Produktangebote DMP3125L-7 nach Preis ab 0.093 EUR bis 3.4 EUR
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DMP3125L-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
auf Bestellung 192285 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3125L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V |
auf Bestellung 292194 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3125L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A On-state resistance: 0.145Ω Power dissipation: 0.65W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3125L-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 192285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.15 EUR |
| 24+ | 0.12 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.1 EUR |
| 3000+ | 0.093 EUR |
| DMP3125L-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V
Description: MOSFET P-CH 30V 2.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.8A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 254 pF @ 25 V
auf Bestellung 292194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 49+ | 0.36 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| DMP3125L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.145Ω
Power dissipation: 0.65W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.65W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 0.145Ω
Power dissipation: 0.65W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.4 EUR |