DMC2700UDM-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| 21000+ | 0.1 EUR |
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Technische Details DMC2700UDM-7 Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.34A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.12W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A, Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active.
Weitere Produktangebote DMC2700UDM-7 nach Preis ab 0.077 EUR bis 0.67 EUR
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DMC2700UDM-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1.14/-1.34A Power dissipation: 1.12W Case: SOT26 Gate-source voltage: ±6V On-state resistance: 0.4/0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
auf Bestellung 3145 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC2700UDM-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 125507 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2700UDM-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 1.34A SOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.12W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active |
auf Bestellung 916292 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2700UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
Power dissipation: 1.12W
Case: SOT26
Gate-source voltage: ±6V
On-state resistance: 0.4/0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
auf Bestellung 3145 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 382+ | 0.19 EUR |
| 719+ | 0.1 EUR |
| 824+ | 0.087 EUR |
| 890+ | 0.08 EUR |
| 925+ | 0.077 EUR |
| DMC2700UDM-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 125507 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.55 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.099 EUR |
| 6000+ | 0.09 EUR |
| DMC2700UDM-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 916292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |



