DMC3025LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 0.28 EUR |
| 5000+ | 0.26 EUR |
| 7500+ | 0.25 EUR |
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Technische Details DMC3025LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A, Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMC3025LSD-13 nach Preis ab 0.2 EUR bis 1.21 EUR
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DMC3025LSD-13 | Hersteller : DIODES/ZETEX |
Trans MOSFET N/P-CH 30V 6.5A/4.2A Automotive 8-Pin SO T/R DMC3025LSD DMC3025LSD TDMC3025LSD Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3025LSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-8.5A On-state resistance: 0.02/0.045Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 2114 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3025LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 12026 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3025LSD-13 | Hersteller : Diodes Incorporated |
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3025LSD-13 | Hersteller : Diodes |
MOSFET N/P-CH 30V 6.5A/4.2A 8SO Група товару: Транзистори Од. вим: шт |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3025LSD-13 | Hersteller : Diodes INC. |
Транзистор польовий N+P, Udss, В = 30, Id = 6,5 А, Ciss, пФ @ Uds, В = 501 @ 15, Rds = 20 мОм @ 7,4 A, 10 В, Ugs(th) = 2 В @ 250 мкА, Р, Вт = 1,2, Тексп, °C = -55...+150, Тип монт. = smd, Id2 = 4,2 А,... Група товару: Транзистори Корпус: SOICN-8 Од. вим: Anzahl je Verpackung: 95 Stücke |
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