DMC3400SDW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET N/P-CH 30V 0.65A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 7002393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
9000+ | 0.1 EUR |
30000+ | 0.099 EUR |
75000+ | 0.082 EUR |
150000+ | 0.081 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMC3400SDW-7 Diodes Incorporated
Description: DIODES INC. - DMC3400SDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 650mA, Dauer-Drainstrom Id, p-Kanal: 650mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 650mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm, Verlustleistung Pd: 310mW, Gate-Source-Schwellenspannung, max.: 1.6V, Verlustleistung, p-Kanal: 310mW, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: Komplementärer n- und p-Kanal, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 310mW, Betriebswiderstand, Rds(on): 0.2ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote DMC3400SDW-7 nach Preis ab 0.073 EUR bis 0.97 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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DMC3400SDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SOT363 Kind of channel: enhanced Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Gate-source voltage: ±20V Drain-source voltage: 30/-30V Drain current: 0.5/-0.36A On-state resistance: 0.4/0.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.39W Polarisation: unipolar Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1580 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3400SDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SOT363 Kind of channel: enhanced Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Gate-source voltage: ±20V Drain-source voltage: 30/-30V Drain current: 0.5/-0.36A On-state resistance: 0.4/0.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.39W Polarisation: unipolar |
auf Bestellung 1580 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3400SDW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.65A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 7020542 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3400SDW-7 | Hersteller : Diodes Incorporated | MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC |
auf Bestellung 118960 Stücke: Lieferzeit 14-28 Tag (e) |
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DMC3400SDW-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMC3400SDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 650mA Dauer-Drainstrom Id, p-Kanal: 650mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 650mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm Verlustleistung Pd: 310mW Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung, p-Kanal: 310mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm productTraceability: Yes-Date/Lot Code Wandlerpolarität: Komplementärer n- und p-Kanal Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 310mW Betriebswiderstand, Rds(on): 0.2ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 13796 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3400SDW-7 | Hersteller : Diodes Inc | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |