DMPH4029LFGQ-13 Diodes Incorporated

Description: MOSFET P-CH 40V 8A/22A PWRDI3333, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).