| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.44 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.94 EUR |
| 2000+ | 0.76 EUR |
| 4000+ | 0.75 EUR |
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Technische Details DMPH4025SFVWQ-7 Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V, Power Dissipation (Max): 2.3W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH4025SFVWQ-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DMPH4025SFVWQ-7 | Diodes Incorporated |
 Description: MOSFET P-CH 40V PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V Power Dissipation (Max): 2.3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMPH4025SFVWQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Mounting: SMD Polarisation: unipolar Pulsed drain current: -80A Drain current: -7.3A Drain-source voltage: -40V Gate charge: 38.6nC On-state resistance: 45mΩ Power dissipation: 2.3W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMPH4025SFVWQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMPH4025SFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -7.3A
Drain-source voltage: -40V
Gate charge: 38.6nC
On-state resistance: 45mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH