Technische Details 2DD1664R-13 Diodes Zetex
Description: TRANS NPN 32V 1A SOT-89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V, Frequency - Transition: 280MHz, Supplier Device Package: SOT-89-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 1 W.
Weitere Produktangebote 2DD1664R-13 nach Preis ab 0.15 EUR bis 0.95 EUR
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2DD1664R-13 | Diodes Incorporated |
 Description: TRANS NPN 32V 1A SOT-89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Frequency - Transition: 280MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W |
auf Bestellung 2595000 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD1664R-13 | Diodes Incorporated |
Description: TRANS NPN 32V 1A SOT-89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Frequency - Transition: 280MHz Supplier Device Package: SOT-89-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W |
auf Bestellung 2597340 Stücke: Lieferzeit 10-14 Tag (e) |
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2DD1664R-13 | Diodes Incorporated |
Bipolar Transistors - BJT 1000W 32Vceo |
auf Bestellung 208 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 1A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS NPN 32V 1A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
auf Bestellung 2595000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.21 EUR |
| 5000+ | 0.19 EUR |
| 12500+ | 0.17 EUR |
| 25000+ | 0.16 EUR |
| 62500+ | 0.15 EUR |
| 2DD1664R-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 1A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS NPN 32V 1A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
auf Bestellung 2597340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 2DD1664R-13 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 1000W 32Vceo
Bipolar Transistors - BJT 1000W 32Vceo
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| 2500+ | 0.21 EUR |