auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH4015SSS-13 Diodes Zetex
Description: MOSFET P-CHANNEL 40V 11.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Power Dissipation (Max): 1.8W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH4015SSS-13 nach Preis ab 0.67 EUR bis 2.85 EUR
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DMPH4015SSS-13 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 40V 11.4A 8-Pin SO T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH4015SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CHANNEL 40V 11.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.8W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH4015SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 11.4A 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH4015SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 11.4A 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH4015SSS-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
auf Bestellung 2853 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH4015SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CHANNEL 40V 11.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.8W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16554 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH4015SSS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 0.009 ohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH4015SSS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMPH4015SSS-13 - Leistungs-MOSFET, p-Kanal, 40 V, 11.4 A, 0.009 ohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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DMPH4015SSS-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 40V 11.4A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMPH4015SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 11.4A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMPH4015SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.1A Pulsed drain current: -85A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMPH4015SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.1A Pulsed drain current: -85A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |