DMPH4013SPSQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details DMPH4013SPSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMPH4013SPSQ-13 nach Preis ab 1.16 EUR bis 3.45 EUR
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DMPH4013SPSQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 3977 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMPH4013SPSQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.45 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.16 EUR |