| Anzahl | Preis |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.47 EUR |
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Technische Details DMPH4029LFG-13 Diodes Incorporated
Description: MOSFET P-CH 40V 8A/22A PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMPH4029LFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMPH4029LFG-13 | Diodes Incorporated |
 Description: MOSFET P-CH 40V 8A/22A PWRDI3333Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMPH4029LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Mounting: SMD Polarisation: unipolar Pulsed drain current: -88A Drain current: -6.7A Drain-source voltage: -40V Gate charge: 34nC On-state resistance: 45mΩ Power dissipation: 2.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMPH4029LFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 8A/22A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 8A/22A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMPH4029LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -88A
Drain current: -6.7A
Drain-source voltage: -40V
Gate charge: 34nC
On-state resistance: 45mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH