auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
Produktrezensionen
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Technische Details DMPH4029LFG-13 Diodes Zetex
Description: MOSFET P-CH 40V 8A/22A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V.
Weitere Produktangebote DMPH4029LFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMPH4029LFG-13 | Hersteller : Diodes Inc |
 Trans MOSFET P-CH 40V 8A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMPH4029LFG-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 8A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMPH4029LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.7A Pulsed drain current: -88A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMPH4029LFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 8A/22A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V |
Produkt ist nicht verfügbar |
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DMPH4029LFG-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
Produkt ist nicht verfügbar |
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| DMPH4029LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.7A Pulsed drain current: -88A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |