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2N7002H-13 DIODES INCORPORATED 2N7002H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
Produkt ist nicht verfügbar
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2N7002K-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; 370mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.37W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Produkt ist nicht verfügbar
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DMP2100UFU-7 DMP2100UFU-7 DIODES INCORPORATED DMP2100UFU.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET x2
Case: U-DFN2030-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
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209+0.34 EUR
500+0.28 EUR
1000+0.25 EUR
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ZXMS6005DGTA ZXMS6005DGTA DIODES INCORPORATED ZXMS6005DG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
auf Bestellung 504 Stücke:
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56+1.29 EUR
81+0.89 EUR
92+0.78 EUR
111+0.65 EUR
250+0.61 EUR
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ZXMS6004FFTA ZXMS6004FFTA DIODES INCORPORATED ZXMS6004FF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Case: SOT23F
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
Control voltage: 60V DC
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109+0.66 EUR
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ZXMS6004DGTA ZXMS6004DGTA DIODES INCORPORATED ZXMS6004DG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
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72+1.01 EUR
89+0.81 EUR
100+0.74 EUR
250+0.67 EUR
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ZXMS6004DN8-13 ZXMS6004DN8-13 DIODES INCORPORATED ZXMS6004DN8.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Output current: 1.3A
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98+0.73 EUR
108+0.67 EUR
117+0.61 EUR
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AP2151AW-7 AP2151AW-7 DIODES INCORPORATED AP2151A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
auf Bestellung 8087 Stücke:
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216+0.33 EUR
242+0.3 EUR
281+0.25 EUR
348+0.21 EUR
360+0.2 EUR
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AP22814ASN-7 DIODES INCORPORATED AP22804_14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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DDTA124TCA-7-F DIODES INCORPORATED DDTA_R1-ONLY_SERIES_CA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Current gain: 100...600
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124XCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124XE-7-F DDTA124XE-7-F DIODES INCORPORATED ds30318.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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BZX84C33-7-F BZX84C33-7-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 1965 Stücke:
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625+0.11 EUR
1471+0.049 EUR
1695+0.042 EUR
1965+0.036 EUR
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BZX84C33T-7-F BZX84C33T-7-F DIODES INCORPORATED BZX84CxxT_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
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BZX84C33-13-F BZX84C33-13-F DIODES INCORPORATED BZX84Cxx_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C33Q-7-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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DMN2050L-7 DMN2050L-7 DIODES INCORPORATED DMN2050L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 1.4W
Drain current: 5.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: SOT23
On-state resistance: 0.1Ω
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DMN2050LFDB-7 DIODES INCORPORATED DMN2050LFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.73W
Drain current: 4.1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: U-DFN2020-6
On-state resistance: 55mΩ
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DMN2050LFDB-13 DIODES INCORPORATED DMN2050LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 3.6A
Gate charge: 12nC
On-state resistance: 55mΩ
Power dissipation: 0.9W
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of channel: enhancement
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DMN2050LQ-7 DIODES INCORPORATED DMN2050LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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GBU608 GBU608 DIODES INCORPORATED GBU6_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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AP6015-M10G-13 DIODES INCORPORATED AP6015.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.8÷5.5VDC; MSOP10; SMD
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: MSOP10
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...5.5V DC
Input voltage: 2...5.5V DC
Efficiency: 94%
Frequency: 0.8...1.2MHz
Topology: buck
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DMN3032LE-13 DMN3032LE-13 DIODES INCORPORATED DMN3032LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Pulsed drain current: 25A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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123+0.58 EUR
182+0.39 EUR
250+0.34 EUR
500+0.3 EUR
600+0.29 EUR
Mindestbestellmenge: 91
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DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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B150B-13-F B150B-13-F DIODES INCORPORATED B120_B-B160_B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
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250+0.29 EUR
291+0.25 EUR
309+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
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B150-13-F B150-13-F DIODES INCORPORATED B120_B-B160_B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
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AL5816W5-7 DIODES INCORPORATED AL5815-AL5816.pdf Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
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AL5816QW5-7 DIODES INCORPORATED AL5816Q.pdf Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
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AP2112M-3.3TRG1 AP2112M-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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AP2112R5-3.3TRG1 AP2112R5-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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AP2112R5A-3.3TRG1 AP2112R5A-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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AP2112R5-1.2TRG1 AP2112R5-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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MBR20150SCTF-G1 DIODES INCORPORATED MBR20150SC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 20mA
Produkt ist nicht verfügbar
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SDT10A100CTFP SDT10A100CTFP DIODES INCORPORATED SDT10A100CT-SDT10A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; Ufmax: 660mV; Ir: 50uA
Mounting: THT
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.66V
Load current: 5A
Max. load current: 10A
Max. off-state voltage: 100V
Max. forward impulse current: 150A
Semiconductor structure: common cathode
auf Bestellung 300 Stücke:
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157+0.46 EUR
173+0.41 EUR
186+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 157
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AP62301Z6-7 DIODES INCORPORATED AP62300_AP62301_AP62300T.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; SOT563
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 3A
Case: SOT563
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 83%
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BSS138DWQ-7 DIODES INCORPORATED BSS138DWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; 200mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT363
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSS138DWQ-13 DIODES INCORPORATED BSS138DWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; automotive industry
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
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BSS123-13-F DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 6Ω
Mounting: SMD
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DDZ11CSF-7 DDZ11CSF-7 DIODES INCORPORATED ddzxxxSF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
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S3DB-13-F S3DB-13-F DIODES INCORPORATED ds16005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
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S1DB-13-F S1DB-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 1.8µs
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ES3DB-13-F ES3DB-13-F DIODES INCORPORATED ds14003.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Reverse recovery time: 25ns
Features of semiconductor devices: superfast switching
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250+0.33 EUR
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RS3DB-13-F DIODES INCORPORATED ds15005.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 150ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 150ns
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RS1DB-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 150ns
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DMN1029UFDB-13 DIODES INCORPORATED DMN1029UFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 20A
Drain-source voltage: 12V
Drain current: 5.8A
Gate charge: 19.6nC
On-state resistance: 65mΩ
Power dissipation: 2.2W
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMN3032LFDB-13 DIODES INCORPORATED DMN3032LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 5A
Gate charge: 10.6nC
On-state resistance: 42mΩ
Power dissipation: 1.7W
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of channel: enhancement
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DMN3055LFDB-13 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of channel: enhancement
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DMP1046UFDB-13 DIODES INCORPORATED DMP1046UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -15A
Drain-source voltage: -12V
Drain current: -4A
Gate charge: 17.9nC
On-state resistance: 0.115Ω
Power dissipation: 2.2W
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMP2065UFDB-13 DIODES INCORPORATED DMP2065UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.6A
Gate charge: 9.1nC
On-state resistance: 0.2Ω
Power dissipation: 1.54W
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of channel: enhancement
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DMP2075UFDB-13 DIODES INCORPORATED DMP2075UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 15nC
On-state resistance: 137mΩ
Power dissipation: 1.4W
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMC3032LFDB-13 DIODES INCORPORATED DMC3032LFDB.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 30V; 1.28W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Operating temperature: -55...150°C
Drain-source voltage: 30V
Power dissipation: 1.28W
Type of transistor: N/P-MOSFET
Technology: MOSFET
Kind of channel: enhancement
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DDA143TU-7-F DIODES INCORPORATED DDA_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 4.7kΩ
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
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KBP202G KBP202G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
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KBP06G DIODES INCORPORATED ds21203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SBR1A40S3-7 SBR1A40S3-7 DIODES INCORPORATED SBR1A40S3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 0.55V
Max. forward impulse current: 20A
Technology: SBR®
Kind of package: reel; tape
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S1BB-13-F S1BB-13-F DIODES INCORPORATED s1ab-s1mb.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
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US1B-13-F US1B-13-F DIODES INCORPORATED ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
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GBU408 GBU408 DIODES INCORPORATED GBU4_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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SMBJ180A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 200...220V
Max. forward impulse current: 2.06A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP7365-WG-7 AP7365-WG-7 DIODES INCORPORATED AP7365.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 0.6A; SOT25
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 0.8...5V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Integrated circuit features: shutdown mode control input
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2N7002H-13 2N7002H.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; 510mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.51W
Case: SOT23
On-state resistance: 7.5Ω
Mounting: SMD
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2N7002K-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; 370mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.37W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
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DMP2100UFU-7 DMP2100UFU.pdf
DMP2100UFU-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET x2
Case: U-DFN2030-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
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209+0.34 EUR
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ZXMS6005DGTA ZXMS6005DG.pdf
ZXMS6005DGTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
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92+0.78 EUR
111+0.65 EUR
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ZXMS6004FFTA ZXMS6004FF.pdf
ZXMS6004FFTA
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Case: SOT23F
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
Control voltage: 60V DC
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75+0.96 EUR
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ZXMS6004DGTA ZXMS6004DG.pdf
ZXMS6004DGTA
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Case: SOT223
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 1
Output current: 1.3A
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ZXMS6004DN8-13 ZXMS6004DN8.pdf
ZXMS6004DN8-13
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Output current: 1.3A
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72+1 EUR
98+0.73 EUR
108+0.67 EUR
117+0.61 EUR
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AP2151AW-7 AP2151A.pdf
AP2151AW-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SOT25
On-state resistance: 95mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Kind of output: P-Channel
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179+0.4 EUR
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242+0.3 EUR
281+0.25 EUR
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360+0.2 EUR
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AP22814ASN-7 AP22804_14.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 3A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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DDTA124TCA-7-F DDTA_R1-ONLY_SERIES_CA.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Current gain: 100...600
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124XCA-7-F ds30334.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.2W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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DDTA124XE-7-F ds30318.pdf
DDTA124XE-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Power dissipation: 0.15W
Frequency: 250MHz
Quantity in set/package: 3000pcs.
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BZX84C33-7-F BZX84Cxx_SER.pdf
BZX84C33-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1471+0.049 EUR
1695+0.042 EUR
1965+0.036 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C33T-7-F BZX84CxxT_SER.pdf
BZX84C33T-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; reel,tape; SOT523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C33-13-F BZX84Cxx_SER.pdf
BZX84C33-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BZX84C33Q-7-F ds18001.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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DMN2050L-7 DMN2050L.pdf
DMN2050L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 1.4W
Drain current: 5.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: SOT23
On-state resistance: 0.1Ω
Produkt ist nicht verfügbar
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DMN2050LFDB-7 DMN2050LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Power dissipation: 0.73W
Drain current: 4.1A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Case: U-DFN2020-6
On-state resistance: 55mΩ
Produkt ist nicht verfügbar
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DMN2050LFDB-13 DMN2050LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 3.6A
Gate charge: 12nC
On-state resistance: 55mΩ
Power dissipation: 0.9W
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN2050LQ-7 DMN2050LQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; automotive industry
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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GBU608 GBU6_ser.pdf
GBU608
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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AP6015-M10G-13 AP6015.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.8÷5.5VDC; MSOP10; SMD
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: MSOP10
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...5.5V DC
Input voltage: 2...5.5V DC
Efficiency: 94%
Frequency: 0.8...1.2MHz
Topology: buck
Produkt ist nicht verfügbar
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DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Pulsed drain current: 25A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 921 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
123+0.58 EUR
182+0.39 EUR
250+0.34 EUR
500+0.3 EUR
600+0.29 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LE-13 DMN10H220LE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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B150B-13-F B120_B-B160_B.pdf
B150B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
auf Bestellung 1652 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
291+0.25 EUR
309+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
B150-13-F B120_B-B160_B.pdf
B150-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
AL5816W5-7 AL5815-AL5816.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AL5816QW5-7 AL5816Q.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...60V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AP2112M-3.3TRG1 AP2112.pdf
AP2112M-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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AP2112R5-3.3TRG1 AP2112.pdf
AP2112R5-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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AP2112R5A-3.3TRG1 AP2112.pdf
AP2112R5A-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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AP2112R5-1.2TRG1 AP2112.pdf
AP2112R5-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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MBR20150SCTF-G1 MBR20150SC.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 20mA
Produkt ist nicht verfügbar
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SDT10A100CTFP SDT10A100CT-SDT10A100CTFP.pdf
SDT10A100CTFP
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; Ufmax: 660mV; Ir: 50uA
Mounting: THT
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.66V
Load current: 5A
Max. load current: 10A
Max. off-state voltage: 100V
Max. forward impulse current: 150A
Semiconductor structure: common cathode
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
173+0.41 EUR
186+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
AP62301Z6-7 AP62300_AP62301_AP62300T.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; SOT563
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 3A
Case: SOT563
Mounting: SMD
Frequency: 750kHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 83%
Produkt ist nicht verfügbar
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BSS138DWQ-7 BSS138DWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; 200mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT363
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSS138DWQ-13 BSS138DWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; automotive industry
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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BSS123-13-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
On-state resistance: 6Ω
Mounting: SMD
Produkt ist nicht verfügbar
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DDZ11CSF-7 ddzxxxSF.pdf
DDZ11CSF-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
S3DB-13-F ds16005.pdf
S3DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
113+0.63 EUR
Mindestbestellmenge: 113
Im Einkaufswagen  Stück im Wert von  UAH
S1DB-13-F s1ab-s1mb.pdf
S1DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 1.8µs
auf Bestellung 929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
782+0.092 EUR
834+0.086 EUR
929+0.077 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
ES3DB-13-F ds14003.pdf
ES3DB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Reverse recovery time: 25ns
Features of semiconductor devices: superfast switching
auf Bestellung 2264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
142+0.5 EUR
188+0.38 EUR
250+0.33 EUR
350+0.31 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
RS3DB-13-F ds15005.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 150ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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RS1DB-13-F ds15002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN1029UFDB-13 DMN1029UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 20A
Drain-source voltage: 12V
Drain current: 5.8A
Gate charge: 19.6nC
On-state resistance: 65mΩ
Power dissipation: 2.2W
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3032LFDB-13 DMN3032LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 5A
Gate charge: 10.6nC
On-state resistance: 42mΩ
Power dissipation: 1.7W
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMN3055LFDB-13 DMN3055LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.2nC
On-state resistance: 75mΩ
Power dissipation: 0.87W
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP1046UFDB-13 DMP1046UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -15A
Drain-source voltage: -12V
Drain current: -4A
Gate charge: 17.9nC
On-state resistance: 0.115Ω
Power dissipation: 2.2W
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DMP2065UFDB-13 DMP2065UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.6A
Gate charge: 9.1nC
On-state resistance: 0.2Ω
Power dissipation: 1.54W
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of channel: enhancement
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DMP2075UFDB-13 DMP2075UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 15nC
On-state resistance: 137mΩ
Power dissipation: 1.4W
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of channel: enhancement
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DMC3032LFDB-13 DMC3032LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 30V; 1.28W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Operating temperature: -55...150°C
Drain-source voltage: 30V
Power dissipation: 1.28W
Type of transistor: N/P-MOSFET
Technology: MOSFET
Kind of channel: enhancement
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.18 EUR
Mindestbestellmenge: 10000
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DDA143TU-7-F DDA_XXXX_U.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; 4.7kΩ
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
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KBP202G KBP2005G_ser.pdf
KBP202G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 65A; flat
Version: flat
Case: KBP
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Leads: flat pin
Load current: 2A
Max. forward impulse current: 65A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
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KBP06G ds21203.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SBR1A40S3-7 SBR1A40S3.pdf
SBR1A40S3-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 0.55V
Max. forward impulse current: 20A
Technology: SBR®
Kind of package: reel; tape
auf Bestellung 4546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
241+0.3 EUR
301+0.24 EUR
352+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
1500+0.12 EUR
3000+0.11 EUR
Mindestbestellmenge: 218
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S1BB-13-F s1ab-s1mb.pdf
S1BB-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
391+0.19 EUR
Mindestbestellmenge: 391
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US1B-13-F ds16008.pdf
US1B-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
Mindestbestellmenge: 136
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GBU408 GBU4_ser.pdf
GBU408
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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SMBJ180A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 200...220V
Max. forward impulse current: 2.06A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP7365-WG-7 AP7365.pdf
AP7365-WG-7
Hersteller: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 0.6A; SOT25
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 0.8...5V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7365
Integrated circuit features: shutdown mode control input
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
192+0.37 EUR
Mindestbestellmenge: 192
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