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SMBJ100A-13-F SMBJ100A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
338+0.21 EUR
391+0.18 EUR
603+0.12 EUR
758+0.094 EUR
Mindestbestellmenge: 250
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SMBJ10CA-13-F SMBJ10CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 188 Stücke:
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188+0.39 EUR
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SMBJ10A-13-F SMBJ10A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 47 Stücke:
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47+1.52 EUR
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DMP3004SSS-13 DMP3004SSS-13 DIODES INCORPORATED DMP3004SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -110A
Drain-source voltage: -30V
Drain current: -18.7A
Gate charge: 156nC
Kind of package: 13 inch reel; tape
On-state resistance: 6.5mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DFLS260-7 DIODES INCORPORATED DFLS260.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 50A
Kind of package: reel; tape
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SMAJ20A-13-F SMAJ20A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1400 Stücke:
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417+0.17 EUR
481+0.15 EUR
544+0.13 EUR
908+0.079 EUR
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SMAJ200A-13-F SMAJ200A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 4595 Stücke:
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200+0.36 EUR
239+0.3 EUR
277+0.26 EUR
521+0.14 EUR
765+0.094 EUR
1000+0.082 EUR
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SMAJ20CA-13-F SMAJ20CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1 Stücke:
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SMAJ200AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ200CA-13-F SMAJ200CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ20CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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PAM2310BECADJR PAM2310BECADJR DIODES INCORPORATED PAM2310.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Output voltage: 0.6...5.5V DC
Output current: 2A
Input voltage: 2.7...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Kind of package: reel; tape
auf Bestellung 3037 Stücke:
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167+0.43 EUR
240+0.3 EUR
266+0.27 EUR
285+0.25 EUR
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ZX5T3ZTA DIODES INCORPORATED ZX5T3Z.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 152MHz
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SMCJ54A-13-F SMCJ54A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1875 Stücke:
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148+0.49 EUR
164+0.44 EUR
175+0.41 EUR
222+0.32 EUR
500+0.26 EUR
1000+0.25 EUR
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SMCJ54CA-13-F SMCJ54CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AZ23C3V9-7-F AZ23C3V9-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Tolerance: ±5%
Semiconductor structure: common anode; double
auf Bestellung 109 Stücke:
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109+0.66 EUR
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MMSZ5248B-7-F MMSZ5248B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 675 Stücke:
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556+0.13 EUR
675+0.11 EUR
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MMSZ5248BQ-7-F MMSZ5248BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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B140-13-F B140-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 786 Stücke:
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358+0.2 EUR
481+0.15 EUR
599+0.12 EUR
666+0.11 EUR
786+0.092 EUR
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RS1J-13-F RS1J-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Capacitance: 15pF
Max. forward impulse current: 30A
Case: SMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 2149 Stücke:
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264+0.27 EUR
358+0.2 EUR
393+0.18 EUR
500+0.14 EUR
669+0.11 EUR
1000+0.092 EUR
2000+0.079 EUR
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RS1JB-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMB; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SMB
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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RS1JDFQ-13 DIODES INCORPORATED RS1JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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FRS1JE DIODES INCORPORATED FRS1JE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO219AA; Ufmax: 1.3V
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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SDM20N40A-7 SDM20N40A-7 DIODES INCORPORATED SDM20N40A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
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SMAJ18A-13-F SMAJ18A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ18AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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MURS160-13-F MURS160-13-F DIODES INCORPORATED MURS140-MURS160.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 279 Stücke:
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200+0.36 EUR
277+0.26 EUR
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MURS160Q-13-F DIODES INCORPORATED MURS160Q.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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GBU1006 GBU1006 DIODES INCORPORATED GBU10_ser.pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
auf Bestellung 62 Stücke:
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44+1.66 EUR
50+1.46 EUR
57+1.27 EUR
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GBU1002 GBU1002 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
auf Bestellung 39 Stücke:
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33+2.19 EUR
39+1.83 EUR
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GBU1001 GBU1001 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
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GBU1008 GBU1008 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
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GBU10005 GBU10005 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
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GBU1004 GBU1004 DIODES INCORPORATED GBU10_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
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DDTC144TE-7-F DIODES INCORPORATED DDTC_R1-ONLY_SERIES_E.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 47kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
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SMCJ13A-13-F SMCJ13A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZSR330GTA DIODES INCORPORATED DS_31_ZSR%20Series.pdf Category: Unclassified
Description: ZSR330GTA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.57 EUR
Mindestbestellmenge: 1000
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SMBJ100A-13-F SMBJ_ser.pdf
SMBJ100A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
338+0.21 EUR
391+0.18 EUR
603+0.12 EUR
758+0.094 EUR
Mindestbestellmenge: 250
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SMBJ10CA-13-F SMBJ_ser.pdf
SMBJ10CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
188+0.39 EUR
Mindestbestellmenge: 188
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SMBJ10A-13-F SMBJ_ser.pdf
SMBJ10A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.8V; 35.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.52 EUR
Mindestbestellmenge: 47
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DMP3004SSS-13 DMP3004SSS.pdf
DMP3004SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SO8
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -110A
Drain-source voltage: -30V
Drain current: -18.7A
Gate charge: 156nC
Kind of package: 13 inch reel; tape
On-state resistance: 6.5mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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DFLS260-7 DFLS260.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ20A-13-F SMAJ_ser.pdf
SMAJ20A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
481+0.15 EUR
544+0.13 EUR
908+0.079 EUR
Mindestbestellmenge: 417
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SMAJ200A-13-F SMAJ_ser.pdf
SMAJ200A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 4595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
239+0.3 EUR
277+0.26 EUR
521+0.14 EUR
765+0.094 EUR
1000+0.082 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ20CA-13-F SMAJ_ser.pdf
SMAJ20CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ200AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ200CA-13-F SMAJ_ser.pdf
SMAJ200CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMAJ20CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PAM2310BECADJR PAM2310.pdf
PAM2310BECADJR
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A; SO8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Output voltage: 0.6...5.5V DC
Output current: 2A
Input voltage: 2.7...5.5V DC
Efficiency: 95%
Frequency: 1.5MHz
Kind of package: reel; tape
auf Bestellung 3037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
240+0.3 EUR
266+0.27 EUR
285+0.25 EUR
Mindestbestellmenge: 167
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ZX5T3ZTA ZX5T3Z.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5.5A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 5.5A
Power dissipation: 3W
Case: SOT89
Pulsed collector current: 15A
Current gain: 110...550
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 152MHz
Produkt ist nicht verfügbar
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SMCJ54A-13-F SMCJ_ser.pdf
SMCJ54A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
164+0.44 EUR
175+0.41 EUR
222+0.32 EUR
500+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ54CA-13-F SMCJ_ser.pdf
SMCJ54CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AZ23C3V9-7-F AZ23C_ser.pdf
AZ23C3V9-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Tolerance: ±5%
Semiconductor structure: common anode; double
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
Mindestbestellmenge: 109
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MMSZ5248B-7-F mmsz52xxb_Ser.pdf
MMSZ5248B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
675+0.11 EUR
Mindestbestellmenge: 556
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MMSZ5248BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5248BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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B140-13-F b120-160b.pdf
B140-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
599+0.12 EUR
666+0.11 EUR
786+0.092 EUR
Mindestbestellmenge: 358
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RS1J-13-F ds15002.pdf
RS1J-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Capacitance: 15pF
Max. forward impulse current: 30A
Case: SMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
358+0.2 EUR
393+0.18 EUR
500+0.14 EUR
669+0.11 EUR
1000+0.092 EUR
2000+0.079 EUR
Mindestbestellmenge: 264
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RS1JB-13-F ds15002.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMB; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SMB
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RS1JDFQ-13 RS1JDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; D-FLAT; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: D-FLAT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FRS1JE FRS1JE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO219AA; Ufmax: 1.3V
Mounting: SMD
Case: DO219AA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SDM20N40A-7 SDM20N40A.pdf
SDM20N40A-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Produkt ist nicht verfügbar
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SMAJ18A-13-F SMAJ_ser.pdf
SMAJ18A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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SMAJ18AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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MURS160-13-F MURS140-MURS160.pdf
MURS160-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
277+0.26 EUR
Mindestbestellmenge: 200
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MURS160Q-13-F MURS160Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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GBU1006 description GBU10_ser.pdf
GBU1006
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
44+1.66 EUR
50+1.46 EUR
57+1.27 EUR
Mindestbestellmenge: 33
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GBU1002 GBU10_ser.pdf
GBU1002
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
39+1.83 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
GBU1001 GBU10_ser.pdf
GBU1001
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
Produkt ist nicht verfügbar
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GBU1008 GBU10_ser.pdf
GBU1008
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
Produkt ist nicht verfügbar
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GBU10005 GBU10_ser.pdf
GBU10005
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
Produkt ist nicht verfügbar
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GBU1004 GBU10_ser.pdf
GBU1004
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Features of semiconductor devices: glass passivated
Kind of package: tube
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DDTC144TE-7-F DDTC_R1-ONLY_SERIES_E.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 47kΩ
Frequency: 250MHz
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SMCJ13A-13-F SMCJ_ser.pdf
SMCJ13A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷15.9V; 69.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZSR330GTA DS_31_ZSR%20Series.pdf
Hersteller: DIODES INCORPORATED
Category: Unclassified
Description: ZSR330GTA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.57 EUR
Mindestbestellmenge: 1000
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