auf Bestellung 2095 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.71 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.93 EUR |
| 2500+ | 0.89 EUR |
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Technische Details DMP3004SSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 16.2A 8SO T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V.
Weitere Produktangebote DMP3004SSS-13 nach Preis ab 0.96 EUR bis 2.99 EUR
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DMP3004SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 16.2A 8SO T&R 2Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V |
auf Bestellung 2143 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3004SSS-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 16.2A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMP3004SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 16.2A 8SO T&R 2Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP3004SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Case: SO8 Mounting: SMD Polarisation: unipolar Pulsed drain current: -110A Drain-source voltage: -30V Drain current: -18.7A Gate charge: 156nC Kind of package: 13 inch reel; tape On-state resistance: 6.5mΩ Power dissipation: 1.6W Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |


