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BZT52C51-7-F BZT52C51-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 51V; SMD; reel,tape; SOD123; single diode
Tolerance: ±6%
Power dissipation: 0.37W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
auf Bestellung 5900 Stücke:
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564+0.13 EUR
834+0.086 EUR
1021+0.07 EUR
1839+0.039 EUR
2067+0.035 EUR
2315+0.031 EUR
2778+0.026 EUR
2942+0.024 EUR
Mindestbestellmenge: 564
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BZT52C51S-13 BZT52C51S-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Tolerance: ±6%
Power dissipation: 0.2W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Produkt ist nicht verfügbar
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ZTX653QSTZ DIODES INCORPORATED ZTX652.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
Produkt ist nicht verfügbar
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ZXLD1356QET5TA DIODES INCORPORATED ZXLD1356Q.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.79 EUR
Mindestbestellmenge: 3000
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ZXMP6A13GTA ZXMP6A13GTA DIODES INCORPORATED ZXMP6A13G.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -7.8A
auf Bestellung 131 Stücke:
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105+0.69 EUR
130+0.55 EUR
131+0.54 EUR
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DSS2540M-7 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
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3000+0.083 EUR
Mindestbestellmenge: 3000
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ZXGD3003E6QTA DIODES INCORPORATED ZXGD3003E6Q.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
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3000+0.41 EUR
Mindestbestellmenge: 3000
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ZXGD3004E6QTA DIODES INCORPORATED Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
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3000+0.47 EUR
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
70+1.03 EUR
83+0.87 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 59
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BZT52HC11WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
Produkt ist nicht verfügbar
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74AHC86T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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74AHC1G32W5-7 74AHC1G32W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BAC092560D3&compId=74AHC1G32.pdf?ci_sign=d27a8986553bcec59373afa7c273b9c9306d954d Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SOT25
Family: AHC
Kind of output: push-pull
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
625+0.11 EUR
723+0.099 EUR
794+0.09 EUR
863+0.083 EUR
946+0.076 EUR
1055+0.068 EUR
3000+0.067 EUR
Mindestbestellmenge: 385
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FMMT617 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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SMBJ16CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
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SMBJ60CA-13-F SMBJ60CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2575 Stücke:
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295+0.24 EUR
368+0.19 EUR
410+0.17 EUR
589+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 295
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
343+0.21 EUR
382+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 278
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2N7002DWK-7 DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
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2N7002DWQ-7-F 2N7002DWQ-7-F DIODES INCORPORATED 2N7002DW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
582+0.12 EUR
649+0.11 EUR
693+0.1 EUR
1000+0.089 EUR
3000+0.083 EUR
Mindestbestellmenge: 455
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2N7002DWS-7 DIODES INCORPORATED 2N7002DWS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
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FMMT619TC DIODES INCORPORATED FMMT619.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.21 EUR
Mindestbestellmenge: 10000
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ZXMN6A08KTC DIODES INCORPORATED ZXMN6A08K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BCX5516TA BCX5516TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
261+0.27 EUR
428+0.17 EUR
983+0.073 EUR
1035+0.069 EUR
Mindestbestellmenge: 179
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DMC2004DWK-7 DMC2004DWK-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B2FB6F6A6F1BF&compId=DMC2004DWK-7.pdf?ci_sign=afbebe9ab6716376fede0e29698f74fc7980be84 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of transistor: complementary pair
Case: SOT363
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.25W
Drain current: 0.43/-0.54A
On-state resistance: 0.55/0.9Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
176+0.41 EUR
224+0.32 EUR
336+0.21 EUR
355+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 125
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SMAJ14A-13-F SMAJ14A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3208 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
424+0.17 EUR
486+0.15 EUR
910+0.079 EUR
953+0.075 EUR
Mindestbestellmenge: 358
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SMBJ14CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
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BZT52C3V9S-7-F BZT52C3V9S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
565+0.13 EUR
Mindestbestellmenge: 565
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LMV393M8-13 LMV393M8-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F4718282001E28&compId=LMV3xx.pdf?ci_sign=b4a18ac5a1f46262c64085b52789b425d42b6e8a Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Produkt ist nicht verfügbar
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DDZ12B-7 DDZ12B-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3373 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
736+0.097 EUR
1334+0.054 EUR
1713+0.042 EUR
3000+0.037 EUR
Mindestbestellmenge: 500
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ZRB500F01TA ZRB500F01TA DIODES INCORPORATED ZRB500.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
141+0.51 EUR
158+0.45 EUR
180+0.4 EUR
186+0.38 EUR
250+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 100
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ZRB500F03TA ZRB500F03TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF57F26BD2075EA&compId=ZRB500F03TA.pdf?ci_sign=7f6d1638d41779276fe26995b54741e4f9a67407 Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
102+0.71 EUR
111+0.65 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 72
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DMTH4M70SPGWQ-13 DIODES INCORPORATED DMTH4M70SPGWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+2.37 EUR
Mindestbestellmenge: 2000
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ZVP4525GQTA DIODES INCORPORATED ZVP4525GQ.pdf Category: Transistors - Unclassified
Description: ZVP4525GQTA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.45 EUR
Mindestbestellmenge: 1000
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SMCJ85CA-13-F SMCJ85CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DMN2310UT-13 DIODES INCORPORATED DMN2310UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.07 EUR
Mindestbestellmenge: 10000
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DMN2710UT-13 DIODES INCORPORATED DMN2710UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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DMN2991UT-13 DIODES INCORPORATED DMN2991UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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BAV23SQ-13-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
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SMAJ150A-13-F SMAJ150A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ7.0CA-13-F SMBJ7.0CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SMB
Leakage current: 0.4mA
Breakdown voltage: 7.78...8.95V
Peak pulse power dissipation: 0.6kW
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SMBJ7.5CA-13-F SMBJ7.5CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ40CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MMSZ5246B-7-F MMSZ5246B-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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BSS123-13-F DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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BZX84C10W-7-F BZX84C10W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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BC847B-13-F BC847B-13-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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BC847BQ-7-F BC847BQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
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GBU808-01-LS DIODES INCORPORATED Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
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B140-13-F B140-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD316779632748&compId=b120-160b.pdf?ci_sign=f87bf2f6a532754517c8bf5f6b5010781b1840db Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
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1300+0.058 EUR
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GBU606 GBU606 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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DMNH6010SCTB-13 DIODES INCORPORATED DMNH6010SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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SMBJ12CAQ-13-F DIODES INCORPORATED ds40740.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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DMG2302UK-7
+1
 		DMG2302UK-7 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMN2056U-7 DMN2056U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMG2302UKQ-7 DMG2302UKQ-7 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
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DMG2302UK-13 DMG2302UK-13 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Pulsed drain current: 12A
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DMG2302UKQ-13 DMG2302UKQ-13 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
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DMG2302UQ-7 DMG2302UQ-7 DIODES INCORPORATED DMG2302UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
Application: automotive industry
Pulsed drain current: 25A
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DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 451 Stücke:
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229+0.31 EUR
327+0.22 EUR
382+0.19 EUR
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DDTC114ELP-7 DIODES INCORPORATED ds30945.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 10...100
Quantity in set/package: 3000pcs.
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1SMB5929B-13 1SMB5929B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1323 Stücke:
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241+0.3 EUR
376+0.19 EUR
511+0.14 EUR
1000+0.12 EUR
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BZT52C51-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C51-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 51V; SMD; reel,tape; SOD123; single diode
Tolerance: ±6%
Power dissipation: 0.37W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
auf Bestellung 5900 Stücke:
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564+0.13 EUR
834+0.086 EUR
1021+0.07 EUR
1839+0.039 EUR
2067+0.035 EUR
2315+0.031 EUR
2778+0.026 EUR
2942+0.024 EUR
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BZT52C51S-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C51S-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 51V; SMD; reel,tape; SOD323; single diode
Tolerance: ±6%
Power dissipation: 0.2W
Zener voltage: 51V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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ZTX653QSTZ ZTX652.pdf
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
Produkt ist nicht verfügbar
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ZXLD1356QET5TA ZXLD1356Q.pdf
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+1.79 EUR
Mindestbestellmenge: 3000
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ZXMP6A13GTA ZXMP6A13G.pdf
ZXMP6A13GTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -7.8A
auf Bestellung 131 Stücke:
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105+0.69 EUR
130+0.55 EUR
131+0.54 EUR
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DSS2540M-7
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.083 EUR
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ZXGD3003E6QTA ZXGD3003E6Q.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.41 EUR
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ZXGD3004E6QTA
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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ZXMHC10A07N8TC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E27836A9B598BF&compId=ZXMHC10A07N8.pdf?ci_sign=d45da52fa173af0a6bbffdf7ee5dcfbf562892fc
ZXMHC10A07N8TC
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
70+1.03 EUR
83+0.87 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 59
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BZT52HC11WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AHC86T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Kind of output: push-pull
Family: AHC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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74AHC1G32W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BAC092560D3&compId=74AHC1G32.pdf?ci_sign=d27a8986553bcec59373afa7c273b9c9306d954d
74AHC1G32W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SOT25
Family: AHC
Kind of output: push-pull
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
625+0.11 EUR
723+0.099 EUR
794+0.09 EUR
863+0.083 EUR
946+0.076 EUR
1055+0.068 EUR
3000+0.067 EUR
Mindestbestellmenge: 385
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FMMT617 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF5618BF5C4B5EA&compId=FMMT617.pdf?ci_sign=1a2b192d78c4d8f4839921e9f8d36b87c3ce8def
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 3A; 625mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 3A
Power dissipation: 0.625W
Case: SOT23
Current gain: 80...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
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SMBJ16CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ60CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ60CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
368+0.19 EUR
410+0.17 EUR
589+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ6.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ6.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
343+0.21 EUR
382+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWK-7 2N7002DWK.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.14A; Idm: 0.8A; 0.31W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.14A
Pulsed drain current: 0.8A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
649+0.11 EUR
693+0.1 EUR
1000+0.089 EUR
3000+0.083 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWS-7 2N7002DWS.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMMT619TC FMMT619.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.21 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A08KTC ZXMN6A08K.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX5516TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX5516TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
428+0.17 EUR
983+0.073 EUR
1035+0.069 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
DMC2004DWK-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B2FB6F6A6F1BF&compId=DMC2004DWK-7.pdf?ci_sign=afbebe9ab6716376fede0e29698f74fc7980be84
DMC2004DWK-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of transistor: complementary pair
Case: SOT363
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 0.25W
Drain current: 0.43/-0.54A
On-state resistance: 0.55/0.9Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Kind of package: 7 inch reel; tape
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
176+0.41 EUR
224+0.32 EUR
336+0.21 EUR
355+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ14A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ14A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 3208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
424+0.17 EUR
486+0.15 EUR
910+0.079 EUR
953+0.075 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ14CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZT52C3V9S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED534E388BC6A18&compId=BZT52CxxS_ser.pdf?ci_sign=19b509c5a9084fd233a8e598b6a776ae01cc116a
BZT52C3V9S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
565+0.13 EUR
Mindestbestellmenge: 565
Im Einkaufswagen  Stück im Wert von  UAH
LMV393M8-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F4718282001E28&compId=LMV3xx.pdf?ci_sign=b4a18ac5a1f46262c64085b52789b425d42b6e8a
LMV393M8-13
Hersteller: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; MSOP8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.7...5.5V DC
Produkt ist nicht verfügbar
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DDZ12B-7 DDZ5V1B-DDZ43.pdf
DDZ12B-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3373 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
736+0.097 EUR
1334+0.054 EUR
1713+0.042 EUR
3000+0.037 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
ZRB500F01TA ZRB500.pdf
ZRB500F01TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±1%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
141+0.51 EUR
158+0.45 EUR
180+0.4 EUR
186+0.38 EUR
250+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
ZRB500F03TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49EF57F26BD2075EA&compId=ZRB500F03TA.pdf?ci_sign=7f6d1638d41779276fe26995b54741e4f9a67407
ZRB500F03TA
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
102+0.71 EUR
111+0.65 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4M70SPGWQ-13 DMTH4M70SPGWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+2.37 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
ZVP4525GQTA ZVP4525GQ.pdf
Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: ZVP4525GQTA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.45 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
SMCJ85CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ85CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2310UT-13 DMN2310UT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.07 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UT-13 DMN2710UT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.072 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN2991UT-13 DMN2991UT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.065 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
BAV23SQ-13-F BAV23A_C_S.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.057 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ150A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ150A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
258+0.28 EUR
298+0.24 EUR
394+0.18 EUR
629+0.11 EUR
887+0.081 EUR
939+0.076 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ7.0CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ7.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: bidirectional
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SMB
Leakage current: 0.4mA
Breakdown voltage: 7.78...8.95V
Peak pulse power dissipation: 0.6kW
auf Bestellung 1717 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
285+0.25 EUR
317+0.23 EUR
486+0.15 EUR
556+0.13 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SMBJ7.5CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ7.5CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
246+0.29 EUR
272+0.26 EUR
379+0.19 EUR
506+0.14 EUR
532+0.13 EUR
Mindestbestellmenge: 179
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SMAJ40CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4÷49.1V; 6.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMSZ5246B-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFC0B7EB22D33D1&compId=mmsz52xxb_Ser.pdf?ci_sign=7464a06bb8ae1d47c66b7ebbcaa1f968dc0d9eaa
MMSZ5246B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BSS123-13-F
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.025 EUR
Mindestbestellmenge: 10000
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BZX84C10W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C10W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
521+0.14 EUR
944+0.076 EUR
1678+0.043 EUR
1774+0.04 EUR
Mindestbestellmenge: 358
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BC847B-13-F ds11108.pdf
BC847B-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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BC847BQ-7-F ds11108.pdf
BC847BQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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GBU808-01-LS
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.33 EUR
Mindestbestellmenge: 320
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B140-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AD316779632748&compId=b120-160b.pdf?ci_sign=f87bf2f6a532754517c8bf5f6b5010781b1840db
B140-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
auf Bestellung 2112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
618+0.12 EUR
699+0.1 EUR
969+0.074 EUR
1150+0.062 EUR
1300+0.058 EUR
2000+0.051 EUR
Mindestbestellmenge: 358
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GBU606 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D6CF6E55400D2&compId=GBU6_ser.pdf?ci_sign=e04df4d46d2c865ae4f6d77f5c6066a07d42ed42
GBU606
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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DMNH6010SCTB-13 DMNH6010SCTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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SMBJ12CAQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 135000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
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DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7
+1
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
459+0.16 EUR
662+0.11 EUR
772+0.093 EUR
949+0.076 EUR
Mindestbestellmenge: 313
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DMN2056U-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF3BB87C4EA18BF&compId=DMN2056U.pdf?ci_sign=02858e5a2ae901756f0aa55529d040dd315a3492
DMN2056U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
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DMG2302UKQ-7 DMG2302UKQ.pdf
DMG2302UKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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DMG2302UK-13 DMG2302UK.pdf
DMG2302UK-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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DMG2302UKQ-13 DMG2302UKQ.pdf
DMG2302UKQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.4nC
Application: automotive industry
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 4.3nC
Application: automotive industry
Pulsed drain current: 25A
Produkt ist nicht verfügbar
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DMN3065LW-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED90BB128E54A18&compId=DMN3065LW.pdf?ci_sign=64395f49275f7994814ea379c2493f36ffcd24f2
DMN3065LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
229+0.31 EUR
327+0.22 EUR
382+0.19 EUR
Mindestbestellmenge: 152
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DDTC114ELP-7 ds30945.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 10...100
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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1SMB5929B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5929B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 1323 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
212+0.34 EUR
241+0.3 EUR
376+0.19 EUR
511+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
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