DMP2305UQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.4W, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).