DMP2305UQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
9000+ | 0.14 EUR |
Produktrezensionen
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Technische Details DMP2305UQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V, Qualification: AEC-Q101.
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DMP2305UQ-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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DMP2305UQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 113mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 7.6nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke |
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DMP2305UQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K |
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DMP2305UQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 113mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 7.6nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |