DMG3415UQ-7 Diodes Zetex
auf Bestellung 2874000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details DMG3415UQ-7 Diodes Zetex
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG3415UQ-7 nach Preis ab 0.15 EUR bis 1.04 EUR
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DMG3415UQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2874000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3415UQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 711 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG3415UQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
auf Bestellung 711 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3415UQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V 24V SOT23 T&R 3K |
auf Bestellung 9880 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3415UQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2875105 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3415UQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG3415UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.031 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.031ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3415UQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG3415UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.031 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.031ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3415UQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG3415UQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG3415UQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |