DMP6050SPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
auf Bestellung 2810000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.63 EUR |
| 5000+ | 0.6 EUR |
| 12500+ | 0.56 EUR |
| 25000+ | 0.55 EUR |
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Technische Details DMP6050SPS-13 Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 1.3W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V.
Weitere Produktangebote DMP6050SPS-13 nach Preis ab 0.64 EUR bis 1.69 EUR
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DMP6050SPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 11706 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP6050SPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
auf Bestellung 2810652 Stücke: Lieferzeit 21-28 Tag (e) |
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DMP6050SPS-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 5.7A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMP6050SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -45A Drain-source voltage: -60V Drain current: -4.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP6050SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -45A Drain-source voltage: -60V Drain current: -4.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |