ZVN4206GTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 1000+ | 0.65 EUR |
| 2000+ | 0.6 EUR |
| 3000+ | 0.57 EUR |
| 5000+ | 0.54 EUR |
| 7000+ | 0.53 EUR |
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Technische Details ZVN4206GTA Diodes Incorporated
Description: MOSFET N-CH 60V 1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.
Weitere Produktangebote ZVN4206GTA nach Preis ab 0.47 EUR bis 2.25 EUR
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ZVN4206GTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 794 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN4206GTA | Diodes Incorporated |
MOSFETs N-Chnl 60V |
auf Bestellung 1882 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4206GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 50483 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZVN4206GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 77+ | 0.93 EUR |
| 98+ | 0.74 EUR |
| 110+ | 0.65 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.47 EUR |
| ZVN4206GTA |
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Hersteller: Diodes Incorporated
MOSFETs N-Chnl 60V
MOSFETs N-Chnl 60V
auf Bestellung 1882 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.51 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.61 EUR |
| 5000+ | 0.6 EUR |
| ZVN4206GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 50483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 13+ | 1.42 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.74 EUR |