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AP7351D-12FS4-7B DIODES INCORPORATED AP7351D.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: X2DFN4
Integrated circuit features: output discharge; shutdown mode control input
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
Output voltage: 1.2V
Output current: 0.15A
Input voltage: 1.4...5.5V
Manufacturer series: AP7351D
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Voltage drop: 0.9V
Produkt ist nicht verfügbar
DMG2307LQ-7 DMG2307LQ-7 DIODES INCORPORATED DMG2307LQ_Rev2.3_Feb2022.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP10H400SK3-13 DMP10H400SK3-13 DIODES INCORPORATED DMP10H400SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
auf Bestellung 1469 Stücke:
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61+1.17 EUR
147+ 0.49 EUR
167+ 0.43 EUR
192+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 61
SMBJ20CA-13-F SMBJ20CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2450 Stücke:
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465+ 0.15 EUR
525+ 0.14 EUR
610+ 0.12 EUR
645+ 0.11 EUR
Mindestbestellmenge: 335
MBRB20150CT-13 DIODES INCORPORATED MBRB20150CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: D2PAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
MBRB20150CT DIODES INCORPORATED MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: D2PAK
Kind of package: tube
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
MBRD20150CT-13 DIODES INCORPORATED MBRD20150CT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; TO252/DPAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: TO252/DPAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
AP7330-W5-7 AP7330-W5-7 DIODES INCORPORATED AP7330.pdf Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Produkt ist nicht verfügbar
AP7330D-W5-7 AP7330D-W5-7 DIODES INCORPORATED Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Produkt ist nicht verfügbar
SDT30A100CTFP DIODES INCORPORATED SDT30A100CT-SDT30A100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Mounting: THT
Kind of package: tube
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Leakage current: 20mA
Type of diode: Schottky rectifying
Case: TO220FP
Max. off-state voltage: 100V
Max. forward voltage: 0.73V
Produkt ist nicht verfügbar
SDM03MT40-7-F SDM03MT40-7-F DIODES INCORPORATED ds30372.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Produkt ist nicht verfügbar
SDM03MT40A-7-F SDM03MT40A-7-F DIODES INCORPORATED ds30372.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Produkt ist nicht verfügbar
ZUMT619TA ZUMT619TA DIODES INCORPORATED ZUMT619.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 215MHz
Produkt ist nicht verfügbar
FZT853TA FZT853TA DIODES INCORPORATED FZT853.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 713 Stücke:
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56+1.29 EUR
67+ 1.07 EUR
80+ 0.9 EUR
120+ 0.6 EUR
129+ 0.56 EUR
Mindestbestellmenge: 56
ZX5T851GTA ZX5T851GTA DIODES INCORPORATED ZX5T851G.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 178 Stücke:
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112+ 0.64 EUR
126+ 0.57 EUR
141+ 0.51 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 77
PDS360Q-13 DIODES INCORPORATED PDS360Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; PowerDI®5; reel,tape
Max. off-state voltage: 60V
Load current: 3A
Max. forward impulse current: 100A
Case: PowerDI®5
Kind of package: reel; tape
Max. forward voltage: 0.76V
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 15mA
Produkt ist nicht verfügbar
DMN62D0UDW-13 DMN62D0UDW-13 DIODES INCORPORATED DMN62D0UDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UDW-7 DMN62D0UDW-7 DIODES INCORPORATED DMN62D0UDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2225 Stücke:
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360+0.2 EUR
560+ 0.13 EUR
620+ 0.12 EUR
820+ 0.087 EUR
865+ 0.083 EUR
Mindestbestellmenge: 360
DMN62D0UDWQ-13 DMN62D0UDWQ-13 DIODES INCORPORATED DMN62D0UDWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UT-7 DMN62D0UT-7 DIODES INCORPORATED DMN62D0UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Pulsed drain current: 1.2A
Power dissipation: 0.34W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UW-13 DMN62D0UW-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UW-7 DMN62D0UW-7 DIODES INCORPORATED DMN62D0UW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.32W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.32W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN62D0UWQ-13 DMN62D0UWQ-13 DIODES INCORPORATED DMN62D0UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UWQ-7 DMN62D0UWQ-7 DIODES INCORPORATED DMN62D0UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6017SK3-13 DIODES INCORPORATED DMN6017SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601DMK-7 DMN601DMK-7 DIODES INCORPORATED ds30657.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601TK-7 DMN601TK-7 DIODES INCORPORATED ds30654.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601WK-7 DMN601WK-7 DIODES INCORPORATED DMN601WK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN601WKQ-13 DMN601WKQ-13 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601WKQ-7 DMN601WKQ-7 DIODES INCORPORATED DMN601WKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6066SSDQ-13 DMN6066SSDQ-13 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 17A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6066SSS-13 DMN6066SSS-13 DIODES INCORPORATED DMN6066SSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 23A
Power dissipation: 2.81W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SE-13 DIODES INCORPORATED DMN6069SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.3A
Pulsed drain current: 25A
Power dissipation: 1.4W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFG-13 DIODES INCORPORATED DMN6069SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFG-7 DIODES INCORPORATED DMN6069SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFGQ-13 DIODES INCORPORATED DMN6069SFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFGQ-7 DIODES INCORPORATED DMN6069SFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0L-13 DMN53D0L-13 DIODES INCORPORATED DMN53D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0L-7 DMN53D0L-7 DIODES INCORPORATED DMN53D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)
340+0.21 EUR
810+ 0.089 EUR
900+ 0.08 EUR
1185+ 0.06 EUR
1255+ 0.057 EUR
Mindestbestellmenge: 340
DMN53D0LDW-13 DMN53D0LDW-13 DIODES INCORPORATED DMN53D0LDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; 310mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LDW-7 DMN53D0LDW-7 DIODES INCORPORATED DMN53D0LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
770+ 0.093 EUR
855+ 0.084 EUR
1090+ 0.066 EUR
1150+ 0.062 EUR
Mindestbestellmenge: 325
DMN53D0LQ-13 DMN53D0LQ-13 DIODES INCORPORATED DMN53D0LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LQ-7 DMN53D0LQ-7 DIODES INCORPORATED DMN53D0LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
770+ 0.093 EUR
840+ 0.086 EUR
Mindestbestellmenge: 325
DMN53D0LT-7 DMN53D0LT-7 DIODES INCORPORATED DMN53D0LT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LV-7 DIODES INCORPORATED DMN53D0LV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; 430mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.43W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LW-13 DMN53D0LW-13 DIODES INCORPORATED DMN53D0LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LW-7 DMN53D0LW-7 DIODES INCORPORATED DMN53D0LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0U-13 DMN53D0U-13 DIODES INCORPORATED DMN53D0U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 0.5A; 520mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0U-7 DMN53D0U-7 DIODES INCORPORATED DMN53D0U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.5A; 0.52W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN55D0UT-7 DMN55D0UT-7 DIODES INCORPORATED DMN55D0UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.16A; 0.2W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN55D0UTQ-7 DMN55D0UTQ-7 DIODES INCORPORATED ds31330.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 160mA; Idm: 560A; 200mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Pulsed drain current: 560A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 295nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMN5L06DWK-7 DMN5L06DWK-7 DIODES INCORPORATED DMN5L06DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.305A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.305A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN5L06K-7 DMN5L06K-7 DIODES INCORPORATED DMN5L06K_Rev12-3_Aug2022.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.8A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 3354 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.22 EUR
795+ 0.09 EUR
880+ 0.081 EUR
1210+ 0.059 EUR
1280+ 0.056 EUR
Mindestbestellmenge: 335
DMN5L06KQ-7 DMN5L06KQ-7 DIODES INCORPORATED DMN5L06K_Mar2014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 800mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN5L06VAK-7 DIODES INCORPORATED DMN5_L06VK_VAK_010VAK_Rev13_Feb2017.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1.5A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V; ±40V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN5L06VK-7 DMN5L06VK-7 DIODES INCORPORATED DMN5L06VK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.28A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN3115UDMQ-13 DMN3115UDMQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Case: SOT26
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 12.8A
Drain-source voltage: 30V
Drain current: 3.2A
Produkt ist nicht verfügbar
AZ1117IH-1.8TRG1 AZ1117IH-1.8TRG1 DIODES INCORPORATED AZ1117I.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Manufacturer series: AZ1117I
Produkt ist nicht verfügbar
BZT52C43Q-7-F BZT52C43Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
BC847BVN-7 DIODES INCORPORATED ds30627.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Mounting: SMD
Case: SOT563
Polarisation: bipolar
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 45V
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Power dissipation: 0.15W
Produkt ist nicht verfügbar
AP7351D-12FS4-7B AP7351D.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: X2DFN4
Integrated circuit features: output discharge; shutdown mode control input
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
Output voltage: 1.2V
Output current: 0.15A
Input voltage: 1.4...5.5V
Manufacturer series: AP7351D
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Voltage drop: 0.9V
Produkt ist nicht verfügbar
DMG2307LQ-7 DMG2307LQ_Rev2.3_Feb2022.pdf
DMG2307LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP10H400SK3-13 DMP10H400SK3.pdf
DMP10H400SK3-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
auf Bestellung 1469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+1.17 EUR
147+ 0.49 EUR
167+ 0.43 EUR
192+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 61
SMBJ20CA-13-F SMBJ_ser.pdf
SMBJ20CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
465+ 0.15 EUR
525+ 0.14 EUR
610+ 0.12 EUR
645+ 0.11 EUR
Mindestbestellmenge: 335
MBRB20150CT-13 MBRB20150CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: D2PAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
MBRB20150CT MBRB20150CT.pdf MBRB20150CT%20N0044%20REV.B.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: D2PAK
Kind of package: tube
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
MBRD20150CT-13 MBRD20150CT.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; TO252/DPAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: TO252/DPAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
AP7330-W5-7 AP7330.pdf
AP7330-W5-7
Hersteller: DIODES INCORPORATED
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Produkt ist nicht verfügbar
AP7330D-W5-7
AP7330D-W5-7
Hersteller: DIODES INCORPORATED
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Produkt ist nicht verfügbar
SDT30A100CTFP SDT30A100CT-SDT30A100CTFP.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Mounting: THT
Kind of package: tube
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Leakage current: 20mA
Type of diode: Schottky rectifying
Case: TO220FP
Max. off-state voltage: 100V
Max. forward voltage: 0.73V
Produkt ist nicht verfügbar
SDM03MT40-7-F ds30372.pdf
SDM03MT40-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Produkt ist nicht verfügbar
SDM03MT40A-7-F ds30372.pdf
SDM03MT40A-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Produkt ist nicht verfügbar
ZUMT619TA ZUMT619.pdf
ZUMT619TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 215MHz
Produkt ist nicht verfügbar
FZT853TA FZT853.pdf
FZT853TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 713 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
56+1.29 EUR
67+ 1.07 EUR
80+ 0.9 EUR
120+ 0.6 EUR
129+ 0.56 EUR
Mindestbestellmenge: 56
ZX5T851GTA ZX5T851G.pdf
ZX5T851GTA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
77+0.93 EUR
112+ 0.64 EUR
126+ 0.57 EUR
141+ 0.51 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 77
PDS360Q-13 PDS360Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; PowerDI®5; reel,tape
Max. off-state voltage: 60V
Load current: 3A
Max. forward impulse current: 100A
Case: PowerDI®5
Kind of package: reel; tape
Max. forward voltage: 0.76V
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 15mA
Produkt ist nicht verfügbar
DMN62D0UDW-13 DMN62D0UDW.pdf
DMN62D0UDW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UDW-7 DMN62D0UDW.pdf
DMN62D0UDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
560+ 0.13 EUR
620+ 0.12 EUR
820+ 0.087 EUR
865+ 0.083 EUR
Mindestbestellmenge: 360
DMN62D0UDWQ-13 DMN62D0UDWQ.pdf
DMN62D0UDWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UT-7 DMN62D0UT.pdf
DMN62D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Pulsed drain current: 1.2A
Power dissipation: 0.34W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UW-13
DMN62D0UW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UW-7 DMN62D0UW.pdf
DMN62D0UW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.32W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.32W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN62D0UWQ-13 DMN62D0UWQ.pdf
DMN62D0UWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN62D0UWQ-7 DMN62D0UWQ.pdf
DMN62D0UWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6017SK3-13 DMN6017SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601DMK-7 ds30657.pdf
DMN601DMK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601TK-7 ds30654.pdf
DMN601TK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 150mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601WK-7 DMN601WK.pdf
DMN601WK-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN601WKQ-13 DMN601WKQ.pdf
DMN601WKQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601WKQ-7 DMN601WKQ.pdf
DMN601WKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 800mA; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6066SSDQ-13
DMN6066SSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 17A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6066SSS-13 DMN6066SSS.pdf
DMN6066SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 23A
Power dissipation: 2.81W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SE-13 DMN6069SE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.3A
Pulsed drain current: 25A
Power dissipation: 1.4W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFG-13 DMN6069SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFG-7 DMN6069SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFGQ-13 DMN6069SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6069SFGQ-7 DMN6069SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0L-13 DMN53D0L.pdf
DMN53D0L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0L-7 DMN53D0L.pdf
DMN53D0L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
340+0.21 EUR
810+ 0.089 EUR
900+ 0.08 EUR
1185+ 0.06 EUR
1255+ 0.057 EUR
Mindestbestellmenge: 340
DMN53D0LDW-13 DMN53D0LDW.pdf
DMN53D0LDW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; 310mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LDW-7 DMN53D0LDW.pdf
DMN53D0LDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
770+ 0.093 EUR
855+ 0.084 EUR
1090+ 0.066 EUR
1150+ 0.062 EUR
Mindestbestellmenge: 325
DMN53D0LQ-13 DMN53D0LQ.pdf
DMN53D0LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LQ-7 DMN53D0LQ.pdf
DMN53D0LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.37W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.37W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
770+ 0.093 EUR
840+ 0.086 EUR
Mindestbestellmenge: 325
DMN53D0LT-7 DMN53D0LT.pdf
DMN53D0LT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LV-7 DMN53D0LV.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; 430mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 0.43W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LW-13 DMN53D0LW.pdf
DMN53D0LW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0LW-7 DMN53D0LW.pdf
DMN53D0LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.7A; 420mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.7A
Power dissipation: 0.42W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0U-13 DMN53D0U.pdf
DMN53D0U-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 0.5A; 520mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN53D0U-7 DMN53D0U.pdf
DMN53D0U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.5A; 0.52W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.5A
Power dissipation: 0.52W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN55D0UT-7 DMN55D0UT.pdf
DMN55D0UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.16A; 0.2W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN55D0UTQ-7 ds31330.pdf
DMN55D0UTQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 160mA; Idm: 560A; 200mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.16A
Pulsed drain current: 560A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 295nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMN5L06DWK-7 DMN5L06DWK.pdf
DMN5L06DWK-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.305A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.305A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN5L06K-7 DMN5L06K_Rev12-3_Aug2022.pdf
DMN5L06K-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; Idm: 0.8A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 3354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.22 EUR
795+ 0.09 EUR
880+ 0.081 EUR
1210+ 0.059 EUR
1280+ 0.056 EUR
Mindestbestellmenge: 335
DMN5L06KQ-7 DMN5L06K_Mar2014.pdf
DMN5L06KQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 800mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN5L06VAK-7 DMN5_L06VK_VAK_010VAK_Rev13_Feb2017.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 280mA; Idm: 1.5A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V; ±40V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN5L06VK-7 DMN5L06VK.pdf
DMN5L06VK-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.28A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.28A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN3115UDMQ-13
DMN3115UDMQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Case: SOT26
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 12.8A
Drain-source voltage: 30V
Drain current: 3.2A
Produkt ist nicht verfügbar
AZ1117IH-1.8TRG1 AZ1117I.pdf
AZ1117IH-1.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Manufacturer series: AZ1117I
Produkt ist nicht verfügbar
BZT52C43Q-7-F BZT52Cxx_ser.pdf
BZT52C43Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
BC847BVN-7 ds30627.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Mounting: SMD
Case: SOT563
Polarisation: bipolar
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 45V
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Power dissipation: 0.15W
Produkt ist nicht verfügbar
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