Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73441) > Seite 1225 nach 1225
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMP32D9UFZ-7B | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW Pulsed drain current: -0.7A Power dissipation: 0.39W Gate charge: 0.35nC Polarisation: unipolar Drain current: -0.1A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: X2-DFN0606-3 On-state resistance: 10Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP32D9UFZ-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Gate charge: 0.35nC
Polarisation: unipolar
Drain current: -0.1A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: X2-DFN0606-3
On-state resistance: 10Ω
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH