Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74704) > Seite 1227 nach 1246
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APX823-23W5G-7 | DIODES INCORPORATED |
 Category: Watchdog and reset circuitsDescription: IC: Supervisor Integrated Circuit; Active logical level: low Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT25 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 2.25V Kind of package: reel; tape Delay time: 200ms Integrated circuit features: manual reset; watchdog |
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APX823-26W5G-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; Active logical level: low Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT25 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 2.63V Kind of package: reel; tape Delay time: 200ms Integrated circuit features: manual reset; watchdog |
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APX823-29W5G-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; Active logical level: low Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT25 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 2.93V Kind of package: reel; tape Delay time: 200ms Integrated circuit features: manual reset; watchdog |
auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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APX823-46W5G-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; Active logical level: low Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT25 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 4.63V Kind of package: reel; tape Delay time: 200ms Integrated circuit features: manual reset; watchdog |
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D5V0L2B3T-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; SOT523 Type of diode: TVS array Breakdown voltage: 6...8V Max. forward impulse current: 6A Peak pulse power dissipation: 0.2W Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 10nA Number of channels: 2 Kind of package: reel; tape Capacitance: 20pF |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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D5V0L2B3W-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷8V; 6A; 84W; bidirectional,double; SOT323; Ch: 2 Type of diode: TVS array Breakdown voltage: 6...8V Max. forward impulse current: 6A Peak pulse power dissipation: 84W Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT323 Max. off-state voltage: 5V Leakage current: 0.1µA Number of channels: 2 Kind of package: reel; tape |
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ZXM61P02FTA | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -700mA Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2748 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74LVC32AS14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -40...150°C Number of inputs: 2 Kind of output: push-pull Number of channels: 4 Kind of gate: OR Technology: CMOS Family: LVC Case: SO14 Type of integrated circuit: digital Kind of package: reel; tape |
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| 74LVC32AT14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
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| DMN32D2LFB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Power dissipation: 0.35W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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AP7381-28SA-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 2.8V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
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AP7381-28V-A | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 2.8V Output current: 0.15A Case: TO92 Mounting: THT Kind of package: Ammo Pack Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
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AP7381-28Y-13 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 2.8V Output current: 0.15A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
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AP7381-50SA-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 5V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
auf Bestellung 1715 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7381-50V-A | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TO92; THT; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 5V Output current: 0.15A Case: TO92 Mounting: THT Kind of package: Ammo Pack Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
auf Bestellung 920 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7381-70SA-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 7V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
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AP7381-70V-A | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; TO92; THT; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 7V Output current: 0.15A Case: TO92 Mounting: THT Kind of package: Ammo Pack Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
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AP7381-70Y-13 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1V Output voltage: 7V Output current: 0.15A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.3...40V Manufacturer series: AP7381 |
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APX803L20-30SA-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC; SOT23 Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 0.9...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 1µA Maximum output current: 20mA Threshold on-voltage: 3V Kind of package: reel; tape Delay time: 220ms Integrated circuit features: ±1,5% accuracy |
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| DMP25H18DLFDE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W Mounting: SMD Kind of package: reel; tape Drain-source voltage: -250V Drain current: -0.21A On-state resistance: 18Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.8nC Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: -1A Case: U-DFN2020-6 |
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| DMP25H18DLFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W Mounting: SMD Kind of package: reel; tape Drain-source voltage: -250V Drain current: -0.21A On-state resistance: 18Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.8nC Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: -1A Case: U-DFN2020-6 |
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ZTX751 | DIODES INCORPORATED |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 2A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1W Case: TO92 Current gain: 100...300 Mounting: THT Frequency: 140MHz |
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AP431SHBN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
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AP431SHBRTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT89 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
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SMBJ17A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 18.9÷21.7V; 21.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17V Breakdown voltage: 18.9...21.7V Max. forward impulse current: 21.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1884 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP1055USW-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V |
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| DMT64M2LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W Kind of package: reel; tape Pulsed drain current: 400A Power dissipation: 2.8W Gate charge: 46.7nC Polarisation: unipolar Drain current: 16.6A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PowerDI5060-8 On-state resistance: 6.4mΩ Mounting: SMD |
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| DMT67M8LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W Kind of package: reel; tape Pulsed drain current: 320A Power dissipation: 2.8W Gate charge: 37.5nC Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PowerDI5060-8 On-state resistance: 8.5mΩ Mounting: SMD |
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| DMTH47M2LPSW-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W Kind of package: reel; tape Pulsed drain current: 292A Power dissipation: 3.8W Gate charge: 12.6nC Polarisation: unipolar Drain current: 51A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: PowerDI5060-8 On-state resistance: 12mΩ Mounting: SMD |
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AZ23C6V8-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: common anode; double Zener voltage: 6.8V Type of diode: Zener Power dissipation: 0.3W |
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| S3B-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A Mounting: SMD Max. forward voltage: 1.15V Features of semiconductor devices: glass passivated Max. off-state voltage: 100V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: rectifying Max. forward impulse current: 100A |
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| SDM01U50CP3-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 0.1A; X3-WLB0603-2 Mounting: SMD Max. forward impulse current: 4A Max. forward voltage: 0.5V Max. off-state voltage: 50V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 25µA Case: X3-WLB0603-2 Capacitance: 7.5pF Type of diode: Schottky rectifying |
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SMCJ160CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 160V Breakdown voltage: 178...197V Max. forward impulse current: 5.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| BSP75GQTA | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| BSP75NQTA | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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| AP22817BKAWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
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BAT64-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 3ns Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 0.75V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 2.1A Power dissipation: 0.25W |
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BAT64S-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 3ns Semiconductor structure: double series Capacitance: 6pF Max. forward voltage: 0.75V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 2.1A Power dissipation: 0.25W |
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| BAT64T5Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 5ns; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 5ns Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 0.725V Case: SOD523 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 1.2A Power dissipation: 0.25W Application: automotive industry |
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| BAT64T5Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 5ns; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 5ns Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 0.725V Case: SOD523 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 1.2A Power dissipation: 0.25W Application: automotive industry |
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BAT64W-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Reverse recovery time: 3ns Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 0.75V Case: SOT323 Kind of package: reel; tape Max. forward impulse current: 2.1A |
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| DMNH6065SPDW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 108A Power dissipation: 2.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMTH6016LPD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
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| SBR40U300CT-G | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SBR®; THT; 300V; 40A; TO220AB; tube Mounting: THT Case: TO220AB Leakage current: 0.1mA Kind of package: tube Type of diode: Schottky rectifying Technology: SBR® Max. off-state voltage: 300V Max. forward voltage: 0.89V Load current: 40A Semiconductor structure: common cathode; double Max. forward impulse current: 235A |
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| SBR40U300CTB-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 300V; 40A; D2PAK; reel,tape Mounting: SMD Case: D2PAK Leakage current: 0.1mA Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SBR® Max. off-state voltage: 300V Max. forward voltage: 0.92V Load current: 40A Semiconductor structure: common cathode; double Max. forward impulse current: 200A |
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AP7331-28WG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD Manufacturer series: AP7331 Output current: 0.3A Case: SOT25 Number of channels: 1 Input voltage: 2...6V Integrated circuit features: shutdown mode control input Mounting: SMD Type of integrated circuit: voltage regulator Voltage drop: 0.55V Operating temperature: -40...85°C Output voltage: 2.8V Kind of package: reel; tape Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear |
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| BZT52B15LP-7B | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; X1-DFN1006-2; 50nA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode Leakage current: 50nA |
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BZX84C3V0-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 1080 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C3V0TS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT363; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT363 Semiconductor structure: triple independent |
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BZX84C3V0W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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DMN2004DMK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26 Case: SOT26 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMN2004DWK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMN2004DWKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMN2004TK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523 Case: SOT523 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.15W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMN2004VK-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563 Case: SOT563 Mounting: SMD On-state resistance: 0.4Ω Kind of package: reel; tape Power dissipation: 0.25W Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET x2 Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMN2004WK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMN2004WKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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SMAJ43A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 47.8÷52.8V; 5.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 5.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ43CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 5.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3880 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 50÷55.3V; 5.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
| APX823-23W5G-7 |
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Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
| APX823-26W5G-7 |
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Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
| APX823-29W5G-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 265+ | 0.27 EUR |
| 295+ | 0.24 EUR |
| 405+ | 0.18 EUR |
| 430+ | 0.17 EUR |
| APX823-46W5G-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
| D5V0L2B3T-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; SOT523
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.2W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 20pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; SOT523
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.2W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 20pF
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 290+ | 0.24 EUR |
| D5V0L2B3W-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 84W; bidirectional,double; SOT323; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 84W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT323
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 84W; bidirectional,double; SOT323; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 84W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT323
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXM61P02FTA | |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2748 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 209+ | 0.34 EUR |
| 249+ | 0.29 EUR |
| 328+ | 0.22 EUR |
| 347+ | 0.21 EUR |
| 74LVC32AS14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...150°C
Number of inputs: 2
Kind of output: push-pull
Number of channels: 4
Kind of gate: OR
Technology: CMOS
Family: LVC
Case: SO14
Type of integrated circuit: digital
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...150°C
Number of inputs: 2
Kind of output: push-pull
Number of channels: 4
Kind of gate: OR
Technology: CMOS
Family: LVC
Case: SO14
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 74LVC32AT14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
| DMN32D2LFB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AP7381-28SA-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
| AP7381-28V-A |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
| AP7381-28Y-13 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
| AP7381-50SA-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 355+ | 0.2 EUR |
| 425+ | 0.17 EUR |
| 485+ | 0.15 EUR |
| 540+ | 0.13 EUR |
| AP7381-50V-A |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 340+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| 410+ | 0.18 EUR |
| 430+ | 0.17 EUR |
| AP7381-70SA-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
| AP7381-70V-A |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
| AP7381-70Y-13 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
| APX803L20-30SA-7 |
|
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC; SOT23
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 3V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC; SOT23
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 3V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
| DMP25H18DLFDE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Produkt ist nicht verfügbar
| DMP25H18DLFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Produkt ist nicht verfügbar
| ZTX751 |
|
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Current gain: 100...300
Mounting: THT
Frequency: 140MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Current gain: 100...300
Mounting: THT
Frequency: 140MHz
Produkt ist nicht verfügbar
| AP431SHBN1TR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
| AP431SHBRTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
| SMBJ17A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.9÷21.7V; 21.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.9÷21.7V; 21.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 265+ | 0.27 EUR |
| 455+ | 0.16 EUR |
| 520+ | 0.14 EUR |
| 630+ | 0.11 EUR |
| DMP1055USW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
| DMT64M2LPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 2.8W
Gate charge: 46.7nC
Polarisation: unipolar
Drain current: 16.6A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 6.4mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 2.8W
Gate charge: 46.7nC
Polarisation: unipolar
Drain current: 16.6A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 6.4mΩ
Mounting: SMD
Produkt ist nicht verfügbar
| DMT67M8LPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 320A
Power dissipation: 2.8W
Gate charge: 37.5nC
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 8.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 320A
Power dissipation: 2.8W
Gate charge: 37.5nC
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 8.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
| DMTH47M2LPSW-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Kind of package: reel; tape
Pulsed drain current: 292A
Power dissipation: 3.8W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 51A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 12mΩ
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Kind of package: reel; tape
Pulsed drain current: 292A
Power dissipation: 3.8W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 51A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 12mΩ
Mounting: SMD
Produkt ist nicht verfügbar
| AZ23C6V8-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: common anode; double
Zener voltage: 6.8V
Type of diode: Zener
Power dissipation: 0.3W
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: common anode; double
Zener voltage: 6.8V
Type of diode: Zener
Power dissipation: 0.3W
Produkt ist nicht verfügbar
| S3B-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Max. forward voltage: 1.15V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: rectifying
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Max. forward voltage: 1.15V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: rectifying
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| SDM01U50CP3-7 |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 0.1A; X3-WLB0603-2
Mounting: SMD
Max. forward impulse current: 4A
Max. forward voltage: 0.5V
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25µA
Case: X3-WLB0603-2
Capacitance: 7.5pF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 0.1A; X3-WLB0603-2
Mounting: SMD
Max. forward impulse current: 4A
Max. forward voltage: 0.5V
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25µA
Case: X3-WLB0603-2
Capacitance: 7.5pF
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| SMCJ160CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| BSP75GQTA |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| BSP75NQTA |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| AP22817BKAWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
| BAT64-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.75V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 2.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.75V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 2.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
| BAT64S-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: double series
Capacitance: 6pF
Max. forward voltage: 0.75V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 2.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: double series
Capacitance: 6pF
Max. forward voltage: 0.75V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 2.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
| BAT64T5Q-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 5ns; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.725V
Case: SOD523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 1.2A
Power dissipation: 0.25W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 5ns; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.725V
Case: SOD523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 1.2A
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
| BAT64T5Q-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 5ns; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.725V
Case: SOD523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 1.2A
Power dissipation: 0.25W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 5ns; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.725V
Case: SOD523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 1.2A
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
| BAT64W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.75V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 2.1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; 3ns; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 0.75V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 2.1A
Produkt ist nicht verfügbar
| DMNH6065SPDW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 108A
Power dissipation: 2.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 108A
Power dissipation: 2.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMTH6016LPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SBR40U300CT-G |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 40A; TO220AB; tube
Mounting: THT
Case: TO220AB
Leakage current: 0.1mA
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SBR®
Max. off-state voltage: 300V
Max. forward voltage: 0.89V
Load current: 40A
Semiconductor structure: common cathode; double
Max. forward impulse current: 235A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 300V; 40A; TO220AB; tube
Mounting: THT
Case: TO220AB
Leakage current: 0.1mA
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SBR®
Max. off-state voltage: 300V
Max. forward voltage: 0.89V
Load current: 40A
Semiconductor structure: common cathode; double
Max. forward impulse current: 235A
Produkt ist nicht verfügbar
| SBR40U300CTB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 300V; 40A; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Max. off-state voltage: 300V
Max. forward voltage: 0.92V
Load current: 40A
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 300V; 40A; D2PAK; reel,tape
Mounting: SMD
Case: D2PAK
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Max. off-state voltage: 300V
Max. forward voltage: 0.92V
Load current: 40A
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
| AP7331-28WG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD
Manufacturer series: AP7331
Output current: 0.3A
Case: SOT25
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.55V
Operating temperature: -40...85°C
Output voltage: 2.8V
Kind of package: reel; tape
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; SOT25; SMD
Manufacturer series: AP7331
Output current: 0.3A
Case: SOT25
Number of channels: 1
Input voltage: 2...6V
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.55V
Operating temperature: -40...85°C
Output voltage: 2.8V
Kind of package: reel; tape
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
| BZT52B15LP-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; X1-DFN1006-2; 50nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; X1-DFN1006-2; 50nA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Leakage current: 50nA
Produkt ist nicht verfügbar
| BZX84C3V0-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1080+ | 0.066 EUR |
| BZX84C3V0TS-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: triple independent
Produkt ist nicht verfügbar
| BZX84C3V0W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| DMN2004DMK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26
Case: SOT26
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26
Case: SOT26
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMN2004DWK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMN2004DWKQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363
Case: SOT363
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMN2004TK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523
Case: SOT523
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.15W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523
Case: SOT523
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.15W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMN2004VK-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563
Case: SOT563
Mounting: SMD
On-state resistance: 0.4Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563
Case: SOT563
Mounting: SMD
On-state resistance: 0.4Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMN2004WK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMN2004WKQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.9Ω
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Drain-source voltage: 20V
Drain current: 0.39A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| SMAJ43A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 47.8÷52.8V; 5.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 47.8÷52.8V; 5.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 135+ | 0.53 EUR |
| SMAJ43CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 290+ | 0.25 EUR |
| 635+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 810+ | 0.089 EUR |
| 865+ | 0.083 EUR |
| SMAJ45A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 50÷55.3V; 5.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 50÷55.3V; 5.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar