DSS4140V-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 1A SOT563
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
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Technische Details DSS4140V-7 Diodes Incorporated
Description: TRANS NPN 40V 1A SOT563, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: SOT-563, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote DSS4140V-7
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|---|---|---|---|---|---|
|
DSS4140V-7 | Diodes Incorporated |
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DSS4140V-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563 Case: SOT563 Mounting: SMD Type of transistor: NPN Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 3A Collector-emitter voltage: 40V Current gain: 75...900 Quantity in set/package: 3000pcs. Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DSS4140V-7 |
![]() |
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DSS4140V-7 |
![]() |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 3A
Collector-emitter voltage: 40V
Current gain: 75...900
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

