BSN20Q-7 Diodes Zetex
auf Bestellung 474000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.076 EUR |
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Technische Details BSN20Q-7 Diodes Zetex
Description: MOSFET N-CH 50V 500MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V, Power Dissipation (Max): 600mW (Ta), 920mW (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSN20Q-7 nach Preis ab 0.076 EUR bis 1.02 EUR
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BSN20Q-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 50V 500MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V Power Dissipation (Max): 600mW (Ta), 920mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 642000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSN20Q-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5 Stücke |
auf Bestellung 417 Stücke: Lieferzeit 7-14 Tag (e) |
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BSN20Q-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.3A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20Q-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 50V 500MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V Power Dissipation (Max): 600mW (Ta), 920mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 643256 Stücke: Lieferzeit 21-28 Tag (e) |
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BSN20Q-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: |
auf Bestellung 8245 Stücke: Lieferzeit 14-28 Tag (e) |
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BSN20Q-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - BSN20Q-7 - Leistungs-MOSFET, n-Kanal, 50 V, 500 mA, 1.3 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 600mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.3ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20Q-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - BSN20Q-7 - Leistungs-MOSFET, n-Kanal, 50 V, 500 mA, 1.3 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 600mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.3ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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BSN20Q-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 50V 0.5A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 21653 Stücke: Lieferzeit 14-21 Tag (e) |