2DB1182Q-13 Diodes Incorporated


2DB1182Q.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A TO-252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 110MHz
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 10 W
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.21 EUR
5000+0.19 EUR
7500+0.18 EUR
12500+0.17 EUR
17500+0.16 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details 2DB1182Q-13 Diodes Incorporated

Description: TRANS PNP 32V 2A TO-252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V, Frequency - Transition: 110MHz, Supplier Device Package: TO-252-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 10 W, Qualification: AEC-Q101.

Weitere Produktangebote 2DB1182Q-13 nach Preis ab 0.19 EUR bis 0.91 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
2DB1182Q-13 2DB1182Q-13 Diodes Incorporated 2DB1182Q.pdf Description: TRANS PNP 32V 2A TO-252-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 10 W
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-252-3
Frequency - Transition: 110MHz
auf Bestellung 24519 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2DB1182Q-13 2DB1182Q-13 Diodes Incorporated 2DB1182Q.pdf Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A
auf Bestellung 3803 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.91 EUR
10+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2500+0.21 EUR
5000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2DB1182Q-13 2DB1182Q.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A TO-252-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 10 W
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-252-3
Frequency - Transition: 110MHz
auf Bestellung 24519 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2DB1182Q-13 2DB1182Q.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A
auf Bestellung 3803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.91 EUR
10+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2500+0.21 EUR
5000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH