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DMT8008LFG-13

DMT8008LFG-13 Diodes Incorporated


DMT8008LFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta), 23.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
auf Bestellung 33000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.94 EUR
6000+ 0.9 EUR
9000+ 0.86 EUR
Mindestbestellmenge: 3000
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Technische Details DMT8008LFG-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V, Power Dissipation (Max): 1W (Ta), 23.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V.

Weitere Produktangebote DMT8008LFG-13

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DMT8008LFG-13 Hersteller : DIODES INCORPORATED DMT8008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Drain-source voltage: 80V
Drain current: 13A
On-state resistance: 10.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 192A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMT8008LFG-13 Hersteller : DIODES INCORPORATED DMT8008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Drain-source voltage: 80V
Drain current: 13A
On-state resistance: 10.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 192A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar