DMP32D4S-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.1 EUR |
| 20000+ | 0.097 EUR |
| 30000+ | 0.094 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP32D4S-13 Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 370mW (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP32D4S-13 nach Preis ab 0.11 EUR bis 0.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMP32D4S-13 | Diodes Incorporated |
MOSFETs P-Ch ENH FET -30V 2.4Ohm -10V -300mA |
auf Bestellung 14645 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DMP32D4S-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 300MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 365306 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP32D4S-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs P-Ch ENH FET -30V 2.4Ohm -10V -300mA
MOSFETs P-Ch ENH FET -30V 2.4Ohm -10V -300mA
auf Bestellung 14645 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.5 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.18 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.13 EUR |
| 10000+ | 0.11 EUR |
| DMP32D4S-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 365306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |

