DMT3009LFVWQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details DMT3009LFVWQ-13 Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT3009LFVWQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMT3009LFVWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT3009LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 10A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 13 inch reel; tape Application: automotive industry Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT3009LFVWQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
MOSFETs MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT3009LFVWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 12nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 10A
Drain-source voltage: 30V
Pulsed drain current: 90A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH