DMP2040UFDF-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMP2040UFDF-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W, Mounting: SMD, Case: U-DFN2020-6, Kind of package: reel; tape, Power dissipation: 1.8W, Drain current: -4.9A, Kind of channel: enhanced, Drain-source voltage: -20V, Type of transistor: P-MOSFET, Gate-source voltage: ±12V, On-state resistance: 53mΩ, Pulsed drain current: -35A, Gate charge: 19nC, Polarisation: unipolar, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMP2040UFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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DMP2040UFDF-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
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| DMP2040UFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 1.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar |
Produkt ist nicht verfügbar |