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DMP2021UFDF-13 Diodes Incorporated


DMP2021UFDF.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details DMP2021UFDF-13 Diodes Incorporated

Description: MOSFET P-CH 20V 9A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 730mW (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).

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DMP2021UFDF-13 DMP2021UFDF-13 Diodes Incorporated DMP2021UFDF.pdf MOSFETs P-Ch -20V Enh FET 8Vgss 0.73W 2760pF
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DMP2021UFDF-13 DMP2021UFDF.pdf
Hersteller: Diodes Incorporated
MOSFETs P-Ch -20V Enh FET 8Vgss 0.73W 2760pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH