DMN53D0U-13 Diodes Incorporated

Description: MOSFET N-CH 50V 300MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 520mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).