DMP4013SPSQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Qualification: AEC-Q101
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Technische Details DMP4013SPSQ-13 Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP4013SPSQ-13 nach Preis ab 0.8 EUR bis 2.41 EUR
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DMP4013SPSQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
auf Bestellung 2358 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4013SPSQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 11A PWRDI5060 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 27648 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP4013SPSQ-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
MOSFETs MOSFET BVDSS: 31V-40V
auf Bestellung 2358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.81 EUR |
| 5000+ | 0.8 EUR |
| DMP4013SPSQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 11A PWRDI5060
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 40V 11A PWRDI5060
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 27648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 11+ | 1.62 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.85 EUR |