DMP4013SPSQ-13 Diodes Zetex
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.75 EUR |
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Technische Details DMP4013SPSQ-13 Diodes Zetex
Description: MOSFET P-CH 40V 11A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP4013SPSQ-13 nach Preis ab 0.82 EUR bis 2.13 EUR
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DMP4013SPSQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 40V 11A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4013SPSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 2481 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4013SPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 11A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5148 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP4013SPSQ-13 | Hersteller : Diodes Inc |
High Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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DMP4013SPSQ-13 | Hersteller : Diodes Zetex |
High Enhancement Mode MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMP4013SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W Gate charge: 67nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -244A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -40V Drain current: -9A On-state resistance: 23mΩ Type of transistor: P-MOSFET Power dissipation: 3.4W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP4013SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W Gate charge: 67nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -244A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -40V Drain current: -9A On-state resistance: 23mΩ Type of transistor: P-MOSFET Power dissipation: 3.4W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |