DMP4013LFGQ-7 Diodes Zetex
auf Bestellung 1541 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 236+ | 0.66 EUR |
| 237+ | 0.64 EUR |
| 275+ | 0.53 EUR |
| 276+ | 0.51 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP4013LFGQ-7 Diodes Zetex
Description: MOSFET P-CH 40V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP4013LFGQ-7 nach Preis ab 0.34 EUR bis 2.23 EUR
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DMP4013LFGQ-7 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 40V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
auf Bestellung 1541 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4013LFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 10.3A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2623 Stücke: Lieferzeit 21-28 Tag (e) |
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DMP4013LFGQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 1747 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP4013LFGQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP4013LFGQ-7 - Leistungs-MOSFET, p-Kanal, 40 V, 10.3 A, 0.0094 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 10.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0094ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4013LFGQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP4013LFGQ-7 - Leistungs-MOSFET, p-Kanal, 40 V, 10.3 A, 0.0094 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 10.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0094ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4013LFGQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 40V 10.3A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMP4013LFGQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 40V 10.3A Automotive 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMP4013LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Kind of package: reel; tape Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMP4013LFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 40V 10.3A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMP4013LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Kind of package: reel; tape Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar |
Produkt ist nicht verfügbar |