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DMPH6050SK3-13 DIODES INCORPORATED


DMPH6050SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 2508 Stücke:

Lieferzeit 14-21 Tag (e)
AnzahlPreis
68+1.06 EUR
92+0.78 EUR
134+0.54 EUR
157+0.46 EUR
500+0.34 EUR
Mindestbestellmenge: 68 Stücke
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Technische Details DMPH6050SK3-13 DIODES INCORPORATED

Description: MOSFET P-CH 60V 7.2A/23.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V.

Weitere Produktangebote DMPH6050SK3-13 nach Preis ab 0.37 EUR bis 1.67 EUR

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DMPH6050SK3-13 DMPH6050SK3-13 Diodes Incorporated DMPH6050SK3.pdf MOSFETs MOSFET BVDSS:
auf Bestellung 61182 Stücke:
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2+1.53 EUR
10+0.98 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
2500+0.4 EUR
5000+0.37 EUR
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DMPH6050SK3-13 DMPH6050SK3-13 Diodes Incorporated DMPH6050SK3.pdf Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.05 EUR
100+0.68 EUR
Mindestbestellmenge: 11 Stücke
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DMPH6050SK3-13 DMPH6050SK3.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS:
auf Bestellung 61182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.53 EUR
10+0.98 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
2500+0.4 EUR
5000+0.37 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMPH6050SK3-13 DMPH6050SK3.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.67 EUR
17+1.05 EUR
100+0.68 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH