| Anzahl | Preis |
|---|---|
| 9+ | 0.33 EUR |
| 15+ | 0.2 EUR |
| 100+ | 0.12 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.067 EUR |
| 5000+ | 0.065 EUR |
| 10000+ | 0.058 EUR |
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Technische Details DMN3731U-13 Diodes Incorporated
Description: MOSFET N-CH 30V 900MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 400mW, Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN3731U-13 nach Preis ab 0.066 EUR bis 0.35 EUR
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DMN3731U-13 | Diodes Incorporated |
 Description: MOSFET N-CH 30V 900MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 400mW Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 8069 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3731U-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 900MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 400mW
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 900MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 400mW
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 8069 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 81+ | 0.22 EUR |
| 131+ | 0.14 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.087 EUR |
| 2000+ | 0.077 EUR |
| 5000+ | 0.066 EUR |