DMP6050SSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.52 EUR |
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Technische Details DMP6050SSD-13 Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V, Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMP6050SSD-13 nach Preis ab 0.43 EUR bis 2.8 EUR
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DMP6050SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.9A Pulsed drain current: -32A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 522 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP6050SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.9A Pulsed drain current: -32A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 522 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6050SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 60V 4.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 192686 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6050SSD-13 | Hersteller : Diodes Incorporated |
MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs |
auf Bestellung 17453 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP6050SSD-13 | Hersteller : Diodes INC. |
2P-канальний ПТ; Udss, В = 60; Id = 4,8 А; Ciss, пФ @ Uds, В = 1293 @ 30; Qg, нКл = 24 @ 10 В; Rds = 55 мОм @ 5 A, 10 В; Ugs(th) = 3 В @ 250 мкА; Р, Вт = 1,2; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6050SSD-13 Produktcode: 143724 |
Transistoren > Transistoren P-Kanal-Feld |
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DMP6050SSD-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 4.8A 8-Pin SO T/R |
Produkt ist nicht verfügbar |