Technische Details DMG1013UWQ-13 Diodes Zetex
Description: MOSFET P-CH 20V 820MA SOT323, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 310mW (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 820mA (Ta), FET Type: P-Channel, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMG1013UWQ-13 nach Preis ab 0.075 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMG1013UWQ-13 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 820MA SOT323Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) FET Type: P-Channel Qualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 580000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013UWQ-13 | Diodes Zetex |
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Diodes Zetex |
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 820MA SOT323 Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 592235 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013UWQ-13 | DIODES INC. |
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7430 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | DIODES INC. |
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7430 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013UWQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 820MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
FET Type: P-Channel
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 820MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
FET Type: P-Channel
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 580000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.086 EUR |
| 30000+ | 0.081 EUR |
| 50000+ | 0.075 EUR |
| DMG1013UWQ-13 |
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Hersteller: Diodes Zetex
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.54 EUR |
| DMG1013UWQ-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.55 EUR |
| DMG1013UWQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 820MA SOT323
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET P-CH 20V 820MA SOT323
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 592235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 0.57 EUR |
| 61+ | 0.35 EUR |
| 143+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 5000+ | 0.11 EUR |
| DMG1013UWQ-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 820mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 310mW
Bauform - Transistor: SOT-323
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: No SVHC (27-Jun-2024)
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 820mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 310mW
Bauform - Transistor: SOT-323
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 7430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 363+ | 0.69 EUR |
| 585+ | 0.39 EUR |
| 1346+ | 0.15 EUR |
| 1520+ | 0.14 EUR |
| 1722+ | 0.12 EUR |
| DMG1013UWQ-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 820mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 310mW
Bauform - Transistor: SOT-323
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: No SVHC (27-Jun-2024)
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 820mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 310mW
Bauform - Transistor: SOT-323
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 7430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.69 EUR |
| 585+ | 0.39 EUR |
| 1346+ | 0.15 EUR |
| 1520+ | 0.14 EUR |
| 1722+ | 0.12 EUR |
| DMG1013UWQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS:
MOSFETs MOSFET BVDSS:
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| 5000+ | 0.14 EUR |