DMG1013UWQ-13 Diodes Zetex
auf Bestellung 4890000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.064 EUR |
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Technische Details DMG1013UWQ-13 Diodes Zetex
Description: MOSFET P-CH 20V 820MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 820mA (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Power Dissipation (Max): 310mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG1013UWQ-13 nach Preis ab 0.063 EUR bis 0.48 EUR
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DMG1013UWQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 820MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 580000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013UWQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 0.82A Automotive AEC-Q101 3-Pin SOT-323 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: |
auf Bestellung 10170 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013UWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 592235 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013UWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7430 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7430 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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DMG1013UWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Drain current: -0.54A Gate charge: 622.4pC Power dissipation: 0.31W On-state resistance: 1.5Ω Kind of package: 13 inch reel; tape Gate-source voltage: ±6V Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT323 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -3A |
Produkt ist nicht verfügbar |