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DMP1022UFDF-7

DMP1022UFDF-7 Diodes Incorporated

DMP1022UFDF.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP1022UFDF-7 Diodes Incorporated

Description: MOSFET P-CH 12V 9.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V.

Weitere Produktangebote DMP1022UFDF-7 nach Preis ab 0.29 EUR bis 1.25 EUR

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DMP1022UFDF-7 DMP1022UFDF-7 Hersteller : Diodes Incorporated DMP1022UFDF.pdf MOSFETs 12V P-Ch Enh Mode 19Vgs 2712pF 28.6nC
auf Bestellung 20499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.07 EUR
10+0.79 EUR
100+0.54 EUR
500+0.44 EUR
1000+0.38 EUR
3000+0.32 EUR
6000+0.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMP1022UFDF-7 DMP1022UFDF-7 Hersteller : Diodes Incorporated DMP1022UFDF.pdf Description: MOSFET P-CH 12V 9.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
auf Bestellung 3235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DMP1022UFDF-7 DMP1022UFDF-7 Hersteller : Diodes Inc dmp1022ufdf.pdf Trans MOSFET P-CH 12V 9.5A 6-Pin UDFN EP T/R
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DMP1022UFDF-7 Hersteller : DIODES INCORPORATED DMP1022UFDF.pdf DMP1022UFDF-7 SMD P channel transistors
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