Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (28192) > Seite 195 nach 470
Foto | Bezeichnung | Hersteller | Beschreibung |
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DI7A6N04SQ2 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI7A6N10SQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.6A Pulsed drain current: 200A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DID3A2N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 16A Power dissipation: 54W Case: IPAK SL; TO251 Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: THT Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DIF120SIC053-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 100A Power dissipation: 278W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DIJ2A3N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 1.5A; Idm: 16A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.5A Pulsed drain current: 16A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: THT Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DIJ4A5N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.7A Pulsed drain current: 28A Power dissipation: 46W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DIT050N06 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 90A Power dissipation: 85W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1101 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT080N08-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 51A Pulsed drain current: 480A Power dissipation: 62.5W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DIT085N10 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 53A; Idm: 480A; 62.5W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Heatsink thickness: max. 1.2mm Power dissipation: 62.5W Drain-source voltage: 100V Drain current: 53A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 75nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 480A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DIT090N06 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Heatsink thickness: max. 1.2mm Power dissipation: 160W Drain-source voltage: 65V Drain current: 62A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 94nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 310A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 837 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT095N08 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 67A; Idm: 320A; 170W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Heatsink thickness: max. 1.2mm Power dissipation: 170W Drain-source voltage: 80V Drain current: 67A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 109nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 320A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 441 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT100N10 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Pulsed drain current: 380A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9.9mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1285 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT120N08 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Pulsed drain current: 450A Drain-source voltage: 80V Drain current: 84A On-state resistance: 4.9mΩ Type of transistor: N-MOSFET Power dissipation: 220W Polarisation: unipolar Gate charge: 163nC Heatsink thickness: max. 1.2mm Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 518 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT150N03 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 105A Pulsed drain current: 600A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 878 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT195N08 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 148A; Idm: 850A; 300W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Heatsink thickness: max. 1.2mm Power dissipation: 300W Drain-source voltage: 85V Drain current: 148A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 850A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 485 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW012N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.5A Pulsed drain current: 60A Power dissipation: 125W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DIW030N65K | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 160A; 156W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 160A Power dissipation: 156W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DIW085N06 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 60A; Idm: 340A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 60A Pulsed drain current: 340A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: THT Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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DIW120SIC059-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 278W Polarisation: unipolar Gate charge: 121nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 100A Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 65mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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EAL1A | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Max. load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EAL1B | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Max. load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EAL1D | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Max. load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EAL1G | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Max. load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.35V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2270 Stücke: Lieferzeit 7-14 Tag (e) |
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EAL1J | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; MiniMELF plastic; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Max. load current: 8A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.8V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EAL1K | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; MiniMELF plastic; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Max. load current: 8A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.8V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EAL1M | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; MiniMELF plastic; Ufmax: 1.8V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Max. load current: 8A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: MiniMELF plastic Max. forward voltage: 1.8V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EGL1A | DIOTEC SEMICONDUCTOR | EGL1A-DIO SMD universal diodes |
auf Bestellung 1425 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL1B | DIOTEC SEMICONDUCTOR | EGL1B-DIO SMD universal diodes |
auf Bestellung 5091 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL1D | DIOTEC SEMICONDUCTOR | EGL1D-DIO SMD universal diodes |
auf Bestellung 17920 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL1G | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A Mounting: SMD Max. forward impulse current: 25A Leakage current: 5µA Case: MiniMELF plastic Kind of package: reel; tape Max. off-state voltage: 0.4kV Max. load current: 8A Max. forward voltage: 1.35V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Type of diode: rectifying Features of semiconductor devices: superfast switching Anzahl je Verpackung: 25 Stücke |
auf Bestellung 12300 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL1GR13 | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: MiniMELF plastic Max. forward voltage: 1.35V Max. forward impulse current: 25A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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EGL1J | DIOTEC SEMICONDUCTOR | EGL1J-DIO SMD universal diodes |
auf Bestellung 18575 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL1K | DIOTEC SEMICONDUCTOR | EGL1K-DIO SMD universal diodes |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL1M | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; MiniMELF plastic; Ufmax: 1.8V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Max. load current: 8A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: MiniMELF plastic Max. forward voltage: 1.8V Max. forward impulse current: 25A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 25 Stücke |
auf Bestellung 7150 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL34A | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA Max. forward voltage: 1.25V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 8.5A Leakage current: 5µA Kind of package: reel; tape Type of diode: rectifying Max. load current: 2A Max. off-state voltage: 50V Features of semiconductor devices: superfast switching Case: MiniMELF plastic Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1810 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL34B | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA Max. forward voltage: 1.25V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 8.5A Leakage current: 5µA Kind of package: reel; tape Type of diode: rectifying Max. load current: 2A Max. off-state voltage: 100V Features of semiconductor devices: superfast switching Case: MiniMELF plastic Mounting: SMD Anzahl je Verpackung: 25 Stücke |
auf Bestellung 3325 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL34D | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA Max. forward voltage: 1.25V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 8.5A Leakage current: 5µA Kind of package: reel; tape Type of diode: rectifying Max. load current: 2A Max. off-state voltage: 200V Features of semiconductor devices: superfast switching Case: MiniMELF plastic Mounting: SMD Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2325 Stücke: Lieferzeit 7-14 Tag (e) |
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EGL34G | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.5A Max. load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: MiniMELF plastic Max. forward voltage: 1.35V Max. forward impulse current: 8.5A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 25 Stücke |
auf Bestellung 13696 Stücke: Lieferzeit 7-14 Tag (e) |
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EM513-AQ | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Case: DO41 Mounting: THT Kind of package: Ammo Pack Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 1.5µs Max. forward impulse current: 27A Leakage current: 50µA Application: automotive industry Type of diode: rectifying Max. off-state voltage: 1.6kV Max. load current: 5.4A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EM513 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Case: DO41 Mounting: THT Kind of package: Ammo Pack Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 1.5µs Max. forward impulse current: 27A Type of diode: rectifying Max. off-state voltage: 1.6kV Max. load current: 5.4A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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EM516 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.8kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 1A Max. load current: 5.4A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: DO41 Max. forward voltage: 1.1V Max. forward impulse current: 27A Kind of package: Ammo Pack Anzahl je Verpackung: 10 Stücke |
auf Bestellung 9490 Stücke: Lieferzeit 7-14 Tag (e) |
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EM518 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 2kV Load current: 1A Max. load current: 5.4A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 27A Case: DO41 Max. forward voltage: 1.1V Reverse recovery time: 1.5µs Anzahl je Verpackung: 10 Stücke |
auf Bestellung 37906 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1A | DIOTEC SEMICONDUCTOR | ER1A-DIO SMD universal diodes |
auf Bestellung 1400 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1B | DIOTEC SEMICONDUCTOR | ER1B-DIO SMD universal diodes |
auf Bestellung 8840 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1D-AQ | DIOTEC SEMICONDUCTOR | ER1D-AQ-DIO SMD universal diodes |
Produkt ist nicht verfügbar |
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ER1D | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 1V; Ifsm: 30A Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Leakage current: 5µA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: superfast switching Case: SMA Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1V Load current: 1A Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2020 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1G | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Max. load current: 6A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
auf Bestellung 6370 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1J | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.7V Case: SMA Max. load current: 6A Semiconductor structure: single diode Leakage current: 5µA Features of semiconductor devices: superfast switching Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Max. forward impulse current: 30A Anzahl je Verpackung: 10 Stücke |
auf Bestellung 7283 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1K | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Max. load current: 6A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
auf Bestellung 4930 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1M-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Max. load current: 6A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 10pF Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.3mA Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 10 Stücke |
auf Bestellung 3090 Stücke: Lieferzeit 7-14 Tag (e) |
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ER1M | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Max. load current: 6A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
auf Bestellung 27960 Stücke: Lieferzeit 7-14 Tag (e) |
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ER2A | DIOTEC SEMICONDUCTOR | ER2A-DIO SMD universal diodes |
auf Bestellung 3430 Stücke: Lieferzeit 7-14 Tag (e) |
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ER2B | DIOTEC SEMICONDUCTOR | ER2B-DIO SMD universal diodes |
auf Bestellung 4810 Stücke: Lieferzeit 7-14 Tag (e) |
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ER2D-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1V Max. forward impulse current: 50A Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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ER2D | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Max. load current: 10A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1V Max. forward impulse current: 50A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2615 Stücke: Lieferzeit 7-14 Tag (e) |
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ER2DSMA-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Max. load current: 10A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 15pF Max. forward voltage: 1V Case: SMA Kind of package: reel; tape Leakage current: 0.3mA Max. forward impulse current: 50A Application: automotive industry Anzahl je Verpackung: 7500 Stücke |
Produkt ist nicht verfügbar |
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ER2DSMA | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Max. load current: 10A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 15pF Case: SMA Max. forward voltage: 1V Max. forward impulse current: 50A Leakage current: 0.3mA Kind of package: reel; tape Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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ER2G | DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.25V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Max. load current: 10A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 50A Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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ER2J | DIOTEC SEMICONDUCTOR | ER2J-DIO SMD universal diodes |
auf Bestellung 8232 Stücke: Lieferzeit 7-14 Tag (e) |
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ER2M | DIOTEC SEMICONDUCTOR | ER2M-DIO SMD universal diodes |
auf Bestellung 1999 Stücke: Lieferzeit 7-14 Tag (e) |
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DI7A6N04SQ2 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI7A6N10SQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 200A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 200A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DID3A2N65 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 16A
Power dissipation: 54W
Case: IPAK SL; TO251
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 16A
Power dissipation: 54W
Case: IPAK SL; TO251
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DIF120SIC053-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.58 EUR |
DIJ2A3N65 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.5A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.5A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.5A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.5A
Pulsed drain current: 16A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DIJ4A5N65 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.7A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.7A; Idm: 28A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.7A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DIT050N06 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 90A; 85W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 90A
Power dissipation: 85W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1101 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
132+ | 0.54 EUR |
151+ | 0.47 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
DIT080N08-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 51A
Pulsed drain current: 480A
Power dissipation: 62.5W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 51A
Pulsed drain current: 480A
Power dissipation: 62.5W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DIT085N10 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53A; Idm: 480A; 62.5W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 62.5W
Drain-source voltage: 100V
Drain current: 53A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53A; Idm: 480A; 62.5W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 62.5W
Drain-source voltage: 100V
Drain current: 53A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DIT090N06 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 160W
Drain-source voltage: 65V
Drain current: 62A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 310A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 160W
Drain-source voltage: 65V
Drain current: 62A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 310A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 837 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
80+ | 0.9 EUR |
91+ | 0.79 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
DIT095N08 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 67A; Idm: 320A; 170W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 170W
Drain-source voltage: 80V
Drain current: 67A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 109nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 67A; Idm: 320A; 170W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 170W
Drain-source voltage: 80V
Drain current: 67A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 109nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 441 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 1.03 EUR |
79+ | 0.92 EUR |
88+ | 0.82 EUR |
101+ | 0.71 EUR |
107+ | 0.67 EUR |
DIT100N10 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 380A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 380A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1285 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.34 EUR |
59+ | 1.22 EUR |
68+ | 1.06 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
DIT120N08 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 450A
Drain-source voltage: 80V
Drain current: 84A
On-state resistance: 4.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Gate charge: 163nC
Heatsink thickness: max. 1.2mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 450A
Drain-source voltage: 80V
Drain current: 84A
On-state resistance: 4.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Gate charge: 163nC
Heatsink thickness: max. 1.2mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 518 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.37 EUR |
59+ | 1.22 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
250+ | 0.93 EUR |
DIT150N03 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 878 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 1.04 EUR |
76+ | 0.95 EUR |
85+ | 0.84 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
DIT195N08 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 148A; Idm: 850A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 300W
Drain-source voltage: 85V
Drain current: 148A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 850A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 148A; Idm: 850A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 300W
Drain-source voltage: 85V
Drain current: 148A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 850A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 485 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.67 EUR |
31+ | 2.36 EUR |
36+ | 2.02 EUR |
38+ | 1.9 EUR |
250+ | 1.86 EUR |
DIW012N65 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.5A
Pulsed drain current: 60A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.5A
Pulsed drain current: 60A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DIW030N65K |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 160A; 156W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 160A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 160A; 156W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 160A
Power dissipation: 156W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DIW085N06 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 60A; Idm: 340A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 60A
Pulsed drain current: 340A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 60A; Idm: 340A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 60A
Pulsed drain current: 340A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.9 EUR |
17+ | 4.4 EUR |
22+ | 3.3 EUR |
23+ | 3.12 EUR |
600+ | 3.03 EUR |
DIW120SIC059-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 121nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 100A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 121nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 100A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.58 EUR |
10+ | 24.57 EUR |
EAL1A |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EAL1B |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EAL1D |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EAL1G |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2270 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
600+ | 0.12 EUR |
950+ | 0.076 EUR |
1070+ | 0.067 EUR |
1230+ | 0.058 EUR |
1300+ | 0.055 EUR |
EAL1J |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EAL1K |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; MiniMELF plastic; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EAL1M |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; MiniMELF plastic; Ufmax: 1.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; MiniMELF plastic; Ufmax: 1.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EGL1A |
Hersteller: DIOTEC SEMICONDUCTOR
EGL1A-DIO SMD universal diodes
EGL1A-DIO SMD universal diodes
auf Bestellung 1425 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1359+ | 0.053 EUR |
1425+ | 0.05 EUR |
10000+ | 0.034 EUR |
EGL1B |
Hersteller: DIOTEC SEMICONDUCTOR
EGL1B-DIO SMD universal diodes
EGL1B-DIO SMD universal diodes
auf Bestellung 5091 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
652+ | 0.11 EUR |
1954+ | 0.037 EUR |
2067+ | 0.035 EUR |
EGL1D |
Hersteller: DIOTEC SEMICONDUCTOR
EGL1D-DIO SMD universal diodes
EGL1D-DIO SMD universal diodes
auf Bestellung 17920 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
968+ | 0.074 EUR |
1471+ | 0.049 EUR |
1558+ | 0.046 EUR |
EGL1G |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A
Mounting: SMD
Max. forward impulse current: 25A
Leakage current: 5µA
Case: MiniMELF plastic
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Max. load current: 8A
Max. forward voltage: 1.35V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Anzahl je Verpackung: 25 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A
Mounting: SMD
Max. forward impulse current: 25A
Leakage current: 5µA
Case: MiniMELF plastic
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Max. load current: 8A
Max. forward voltage: 1.35V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Anzahl je Verpackung: 25 Stücke
auf Bestellung 12300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1025+ | 0.071 EUR |
1125+ | 0.064 EUR |
1475+ | 0.049 EUR |
1550+ | 0.046 EUR |
EGL1GR13 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 25A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; MiniMELF plastic; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 25A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
EGL1J |
Hersteller: DIOTEC SEMICONDUCTOR
EGL1J-DIO SMD universal diodes
EGL1J-DIO SMD universal diodes
auf Bestellung 18575 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
926+ | 0.077 EUR |
1417+ | 0.05 EUR |
1498+ | 0.048 EUR |
EGL1K |
Hersteller: DIOTEC SEMICONDUCTOR
EGL1K-DIO SMD universal diodes
EGL1K-DIO SMD universal diodes
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
910+ | 0.079 EUR |
1386+ | 0.052 EUR |
1467+ | 0.049 EUR |
EGL1M |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; MiniMELF plastic; Ufmax: 1.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 25A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; MiniMELF plastic; Ufmax: 1.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 8A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.8V
Max. forward impulse current: 25A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
auf Bestellung 7150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
900+ | 0.081 EUR |
1000+ | 0.073 EUR |
1350+ | 0.053 EUR |
1425+ | 0.05 EUR |
EGL34A |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 50V
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 50V
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1810 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
893+ | 0.08 EUR |
1810+ | 0.04 EUR |
EGL34B |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 100V
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Mounting: SMD
Anzahl je Verpackung: 25 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 100V
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Mounting: SMD
Anzahl je Verpackung: 25 Stücke
auf Bestellung 3325 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1475+ | 0.049 EUR |
1650+ | 0.044 EUR |
2150+ | 0.034 EUR |
2275+ | 0.032 EUR |
EGL34D |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Mounting: SMD
Anzahl je Verpackung: 25 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 200V
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Mounting: SMD
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2325 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1200+ | 0.06 EUR |
1325+ | 0.054 EUR |
1625+ | 0.044 EUR |
1725+ | 0.042 EUR |
10000+ | 0.04 EUR |
EGL34G |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.5A; 50ns; MiniMELF plastic; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: MiniMELF plastic
Max. forward voltage: 1.35V
Max. forward impulse current: 8.5A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
auf Bestellung 13696 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1150+ | 0.063 EUR |
1275+ | 0.056 EUR |
1650+ | 0.043 EUR |
1750+ | 0.041 EUR |
EM513-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 27A
Leakage current: 50µA
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Max. load current: 5.4A
Anzahl je Verpackung: 10 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 27A
Leakage current: 50µA
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Max. load current: 5.4A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EM513 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 27A
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Max. load current: 5.4A
Anzahl je Verpackung: 10 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 1.5µs
Max. forward impulse current: 27A
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Max. load current: 5.4A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
EM516 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 1A
Max. load current: 5.4A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1.1V
Max. forward impulse current: 27A
Kind of package: Ammo Pack
Anzahl je Verpackung: 10 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 1A
Max. load current: 5.4A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1.1V
Max. forward impulse current: 27A
Kind of package: Ammo Pack
Anzahl je Verpackung: 10 Stücke
auf Bestellung 9490 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
720+ | 0.1 EUR |
1390+ | 0.052 EUR |
1570+ | 0.046 EUR |
1910+ | 0.038 EUR |
2010+ | 0.036 EUR |
EM518 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 2kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 2kV
Load current: 1A
Max. load current: 5.4A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Anzahl je Verpackung: 10 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 2kV; 1A; Ammo Pack; Ifsm: 27A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 2kV
Load current: 1A
Max. load current: 5.4A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 27A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37906 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
720+ | 0.1 EUR |
1150+ | 0.062 EUR |
1310+ | 0.055 EUR |
1590+ | 0.045 EUR |
1680+ | 0.043 EUR |
ER1A |
Hersteller: DIOTEC SEMICONDUCTOR
ER1A-DIO SMD universal diodes
ER1A-DIO SMD universal diodes
auf Bestellung 1400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
1337+ | 0.053 EUR |
1400+ | 0.051 EUR |
7500+ | 0.049 EUR |
ER1B |
Hersteller: DIOTEC SEMICONDUCTOR
ER1B-DIO SMD universal diodes
ER1B-DIO SMD universal diodes
auf Bestellung 8840 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
653+ | 0.11 EUR |
1480+ | 0.048 EUR |
1563+ | 0.046 EUR |
ER1D-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
ER1D-AQ-DIO SMD universal diodes
ER1D-AQ-DIO SMD universal diodes
Produkt ist nicht verfügbar
ER1D |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 1V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: SMA
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1V
Load current: 1A
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 1V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: SMA
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1V
Load current: 1A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2020 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
730+ | 0.099 EUR |
1120+ | 0.064 EUR |
1240+ | 0.058 EUR |
1440+ | 0.05 EUR |
1520+ | 0.047 EUR |
7500+ | 0.045 EUR |
ER1G |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
auf Bestellung 6370 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
740+ | 0.097 EUR |
1020+ | 0.07 EUR |
1270+ | 0.057 EUR |
1490+ | 0.048 EUR |
1580+ | 0.045 EUR |
7500+ | 0.044 EUR |
ER1J |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Case: SMA
Max. load current: 6A
Semiconductor structure: single diode
Leakage current: 5µA
Features of semiconductor devices: superfast switching
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.7V
Case: SMA
Max. load current: 6A
Semiconductor structure: single diode
Leakage current: 5µA
Features of semiconductor devices: superfast switching
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 7283 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
700+ | 0.1 EUR |
980+ | 0.073 EUR |
1200+ | 0.06 EUR |
1480+ | 0.048 EUR |
1570+ | 0.046 EUR |
ER1K |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4930 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
690+ | 0.11 EUR |
1030+ | 0.069 EUR |
1160+ | 0.062 EUR |
1420+ | 0.051 EUR |
1500+ | 0.048 EUR |
ER1M-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.3mA
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.3mA
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 10 Stücke
auf Bestellung 3090 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
760+ | 0.094 EUR |
910+ | 0.079 EUR |
1060+ | 0.067 EUR |
1130+ | 0.064 EUR |
1150+ | 0.062 EUR |
7500+ | 0.061 EUR |
ER1M |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Max. load current: 6A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
auf Bestellung 27960 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
730+ | 0.099 EUR |
1010+ | 0.071 EUR |
1200+ | 0.06 EUR |
1400+ | 0.051 EUR |
1480+ | 0.048 EUR |
5000+ | 0.046 EUR |
ER2A |
Hersteller: DIOTEC SEMICONDUCTOR
ER2A-DIO SMD universal diodes
ER2A-DIO SMD universal diodes
auf Bestellung 3430 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
334+ | 0.21 EUR |
942+ | 0.076 EUR |
997+ | 0.072 EUR |
ER2B |
Hersteller: DIOTEC SEMICONDUCTOR
ER2B-DIO SMD universal diodes
ER2B-DIO SMD universal diodes
auf Bestellung 4810 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
329+ | 0.22 EUR |
887+ | 0.081 EUR |
939+ | 0.076 EUR |
3000+ | 0.075 EUR |
ER2D-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
ER2D |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1V
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2615 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
335+ | 0.22 EUR |
585+ | 0.12 EUR |
720+ | 0.1 EUR |
890+ | 0.081 EUR |
940+ | 0.076 EUR |
ER2DSMA-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 15pF
Max. forward voltage: 1V
Case: SMA
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 50A
Application: automotive industry
Anzahl je Verpackung: 7500 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 15pF
Max. forward voltage: 1V
Case: SMA
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 50A
Application: automotive industry
Anzahl je Verpackung: 7500 Stücke
Produkt ist nicht verfügbar
ER2DSMA |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 15pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 15pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
ER2G |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.25V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.25V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Max. load current: 10A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 50A
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
ER2J |
Hersteller: DIOTEC SEMICONDUCTOR
ER2J-DIO SMD universal diodes
ER2J-DIO SMD universal diodes
auf Bestellung 8232 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
357+ | 0.2 EUR |
908+ | 0.079 EUR |
962+ | 0.074 EUR |
ER2M |
Hersteller: DIOTEC SEMICONDUCTOR
ER2M-DIO SMD universal diodes
ER2M-DIO SMD universal diodes
auf Bestellung 1999 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
357+ | 0.2 EUR |
887+ | 0.081 EUR |
937+ | 0.076 EUR |
3000+ | 0.074 EUR |