Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (32833) > Seite 548 nach 548
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F1200B | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 100V; 12A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm Kind of package: Ammo Pack Case: Ø8x7,5mm Features of semiconductor devices: fast switching Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 200ns Leakage current: 5µA Max. forward voltage: 0.82V Load current: 12A Max. load current: 130A Max. off-state voltage: 100V Max. forward impulse current: 0.65kA |
auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4148WS | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323F; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD323F Max. forward voltage: 1.25V Reverse recovery time: 4ns Power dissipation: 0.2W Max. load current: 0.3A Leakage current: 50µA |
auf Bestellung 199289 Stücke: Lieferzeit 14-21 Tag (e) |
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MMDT5213W | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ Case: SOT323 Mounting: SMD Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar |
auf Bestellung 2640 Stücke: Lieferzeit 14-21 Tag (e) |
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UF4002 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 5uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Reverse recovery time: 50ns Leakage current: 5µA Max. load current: 10A |
auf Bestellung 5094 Stücke: Lieferzeit 14-21 Tag (e) |
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SUF4002 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 100V; 1A; 50ns; MELF plastic; Ufmax: 1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 27A Case: MELF plastic Max. forward voltage: 1V Reverse recovery time: 50ns Leakage current: 5µA Max. load current: 10A |
auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z3V3-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.3W; 3.3V; 86mA; SMD; reel,tape; SOD323F; MM3Z Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Manufacturer series: MM3Z Application: automotive industry Zener current: 86mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DI020P06PT-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -70A Power dissipation: 29.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 4699 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020P06PT | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -70A Power dissipation: 29.7W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
F1200B |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 12A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Case: Ø8x7,5mm
Features of semiconductor devices: fast switching
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 12A
Max. load current: 130A
Max. off-state voltage: 100V
Max. forward impulse current: 0.65kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 12A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Case: Ø8x7,5mm
Features of semiconductor devices: fast switching
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 12A
Max. load current: 130A
Max. off-state voltage: 100V
Max. forward impulse current: 0.65kA
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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59+ | 1.23 EUR |
93+ | 0.77 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
1N4148WS |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323F; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1.25V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Max. load current: 0.3A
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323F; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1.25V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Max. load current: 0.3A
Leakage current: 50µA
auf Bestellung 199289 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
1471+ | 0.049 EUR |
1613+ | 0.044 EUR |
2233+ | 0.032 EUR |
2778+ | 0.026 EUR |
3031+ | 0.024 EUR |
6173+ | 0.012 EUR |
6494+ | 0.011 EUR |
MMDT5213W |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Case: SOT323
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 47kΩ
Case: SOT323
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1640+ | 0.044 EUR |
2640+ | 0.027 EUR |
UF4002 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 5µA
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 5µA
Max. load current: 10A
auf Bestellung 5094 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
758+ | 0.094 EUR |
1107+ | 0.065 EUR |
1417+ | 0.05 EUR |
2763+ | 0.026 EUR |
2907+ | 0.025 EUR |
SUF4002 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; MELF plastic; Ufmax: 1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 27A
Case: MELF plastic
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 5µA
Max. load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; MELF plastic; Ufmax: 1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 27A
Case: MELF plastic
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 5µA
Max. load current: 10A
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
527+ | 0.14 EUR |
703+ | 0.1 EUR |
793+ | 0.09 EUR |
930+ | 0.077 EUR |
1040+ | 0.069 EUR |
MM3Z3V3-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; 86mA; SMD; reel,tape; SOD323F; MM3Z
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Application: automotive industry
Zener current: 86mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; 86mA; SMD; reel,tape; SOD323F; MM3Z
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Application: automotive industry
Zener current: 86mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI020P06PT-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -70A
Power dissipation: 29.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -70A
Power dissipation: 29.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 4699 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
218+ | 0.33 EUR |
285+ | 0.25 EUR |
300+ | 0.24 EUR |
DI020P06PT |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -70A
Power dissipation: 29.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -70A; 29.7W; QFN3X3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -70A
Power dissipation: 29.7W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH