F1200B Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: DIODE GEN PURP 100V 12A P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: P-600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 0.74 EUR |
| 1000+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details F1200B Diotec Semiconductor
Category: THT universal diodes, Description: Diode: rectifying; THT; 100V; 12A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 100V, Load current: 12A, Max. load current: 130A, Semiconductor structure: single diode, Features of semiconductor devices: fast switching, Kind of package: Ammo Pack, Max. forward impulse current: 0.65kA, Case: Ø8x7,5mm, Max. forward voltage: 0.82V, Leakage current: 5µA, Reverse recovery time: 200ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote F1200B nach Preis ab 0.4 EUR bis 1 EUR
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F1200B | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 12A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 12A Max. load current: 130A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: Ammo Pack Max. forward impulse current: 0.65kA Case: Ø8x7,5mm Max. forward voltage: 0.82V Leakage current: 5µA Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 549 Stücke: Lieferzeit 7-14 Tag (e) |
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F1200B | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 12A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 12A Max. load current: 130A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: Ammo Pack Max. forward impulse current: 0.65kA Case: Ø8x7,5mm Max. forward voltage: 0.82V Leakage current: 5µA Reverse recovery time: 200ns |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
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F1200B | Hersteller : Diotec Semiconductor |
Rectifier Diode 100V 12A 200ns 2-Pin Case P-600 Ammo |
Produkt ist nicht verfügbar |
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F1200B | Hersteller : Diotec Semiconductor |
Rectifier Diode 100V 12A 200ns 2-Pin Case P-600 Ammo |
Produkt ist nicht verfügbar |
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F1200B | Hersteller : Diotec Semiconductor |
Rectifier Diode 100V 12A 200ns 2-Pin Case P-600 Ammo |
Produkt ist nicht verfügbar |
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F1200B | Hersteller : Diotec Semiconductor |
Description: DIODE GEN PURP 100V 12A P600 Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: P-600 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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F1200B | Hersteller : Diotec Semiconductor |
Rectifiers Diode, Fast, P600, 100V, 12A, 150C |
Produkt ist nicht verfügbar |