Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (32840) > Seite 70 nach 548
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BAT54CW | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 30 V |
auf Bestellung 2214 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT54CW | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 30 V |
Produkt ist nicht verfügbar |
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P4SMAJ58A | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.3A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 400W Power Line Protection: No |
auf Bestellung 3315 Stücke: Lieferzeit 10-14 Tag (e) |
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P4SMAJ58A | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.3A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 400W Power Line Protection: No |
Produkt ist nicht verfügbar |
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P6SMAJ58A-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5.3A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 500W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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P4SMAJ58A-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.3A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BY500-400 | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 1099 Stücke: Lieferzeit 10-14 Tag (e) |
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BY500-400 | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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BY500-50 | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 539 Stücke: Lieferzeit 10-14 Tag (e) |
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BY500-50 | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
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BY500-1000 | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 981 Stücke: Lieferzeit 10-14 Tag (e) |
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BY500-1000 | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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MMBT7002KW-AQ | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MMBT7002KW-AQ | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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BYW27-400 | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 200 nA @ 400 V |
auf Bestellung 4956 Stücke: Lieferzeit 10-14 Tag (e) |
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BYW27-400 | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 200 nA @ 400 V |
Produkt ist nicht verfügbar |
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DI010N03PW | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DI010N03PW | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DI010N03PW-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DI110N03PQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V |
Produkt ist nicht verfügbar |
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DI110N03PQ-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PX1500K | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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EGL1GR13 | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AA (MINIMELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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LDI75L05UA | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Voltage - Input (Max): 24V Number of Regulators: 1 Supplier Device Package: SOT-89 Voltage - Output (Min/Fixed): 5V Voltage Dropout (Max): 0.055V @ 1mA |
Produkt ist nicht verfügbar |
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DI072N06PT | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V |
Produkt ist nicht verfügbar |
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P6KE160A | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.8A Voltage - Reverse Standoff (Typ): 136V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 152V Voltage - Clamping (Max) @ Ipp: 219V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
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P6KE160A | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.8A Voltage - Reverse Standoff (Typ): 136V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 152V Voltage - Clamping (Max) @ Ipp: 219V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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P6SMBJ130A | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.9A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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P6SMBJ130A | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.9A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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P6SMBJ130A-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 2.9A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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P6SMBJ13A | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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P6SMBJ13A | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
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1N4004GP-AQ | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 4694 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4004GP-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMFTN6001 | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTN6001 | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
auf Bestellung 6845 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTN170 | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTN170 | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 4375 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTP3008K | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMFTP3008K-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMFTN620KD | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMFTN620KD-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMFTP332 | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMFTP5618-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMZ130 | Diotec Semiconductor |
![]() Tolerance: ±5% Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-213AB (MELF) Power - Max: 2 W Current - Reverse Leakage @ Vr: 1 µA @ 60 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMZ13 | Diotec Semiconductor |
![]() Tolerance: ±5% Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-213AB (MELF) Power - Max: 2 W Current - Reverse Leakage @ Vr: 1 µA @ 7 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMZ13 | Diotec Semiconductor |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-213AB (MELF) Power - Max: 2 W Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SMZ130 | Diotec Semiconductor |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-213AB (MELF) Power - Max: 2 W Current - Reverse Leakage @ Vr: 1 µA @ 104 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BC847C-C | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 2775 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847C-C | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SA159 | Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4005GP-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ZPD30 | Diotec Semiconductor |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -50°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 22 V |
auf Bestellung 4988 Stücke: Lieferzeit 10-14 Tag (e) |
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ZPD30 | Diotec Semiconductor |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -50°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 22 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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US3A | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4002 | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 4873 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4002GP-AQ | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 4638 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4002GP-AQ | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N5407K | Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5407K | Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BAT54CW |
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Hersteller: Diotec Semiconductor
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
auf Bestellung 2214 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 0.28 EUR |
129+ | 0.14 EUR |
165+ | 0.11 EUR |
500+ | 0.079 EUR |
1000+ | 0.07 EUR |
BAT54CW |
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Hersteller: Diotec Semiconductor
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P4SMAJ58A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 3315 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 0.46 EUR |
71+ | 0.25 EUR |
114+ | 0.15 EUR |
500+ | 0.13 EUR |
1000+ | 0.1 EUR |
P4SMAJ58A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMAJ58A-AQ |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P4SMAJ58A-AQ |
![]() |
Hersteller: Diotec Semiconductor
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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BY500-400 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1099 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.74 EUR |
49+ | 0.36 EUR |
100+ | 0.26 EUR |
500+ | 0.2 EUR |
BY500-400 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BY500-50 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 50V 5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 539 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 0.6 EUR |
48+ | 0.37 EUR |
100+ | 0.23 EUR |
500+ | 0.17 EUR |
BY500-50 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 50V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BY500-1000 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 1000V 5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.06 EUR |
34+ | 0.52 EUR |
100+ | 0.37 EUR |
500+ | 0.29 EUR |
BY500-1000 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 1000V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT7002KW-AQ |
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Hersteller: Diotec Semiconductor
Description: MOSFET SOT-323 N 60V 0.3A 1.6? 1
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET SOT-323 N 60V 0.3A 1.6? 1
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT7002KW-AQ |
![]() |
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-323 N 60V 0.3A 1.6? 1
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET SOT-323 N 60V 0.3A 1.6? 1
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
72+ | 0.25 EUR |
106+ | 0.17 EUR |
160+ | 0.11 EUR |
500+ | 0.088 EUR |
1000+ | 0.079 EUR |
BYW27-400 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
auf Bestellung 4956 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 0.6 EUR |
48+ | 0.37 EUR |
100+ | 0.23 EUR |
500+ | 0.17 EUR |
1000+ | 0.15 EUR |
2000+ | 0.14 EUR |
BYW27-400 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI010N03PW |
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Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.21 EUR |
DI010N03PW |
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Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.76 EUR |
35+ | 0.51 EUR |
100+ | 0.35 EUR |
500+ | 0.27 EUR |
1000+ | 0.25 EUR |
2000+ | 0.22 EUR |
DI010N03PW-AQ |
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Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V
Packaging: Bulk
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-QFN (2x2)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET POWERQFN 2X2 N 30V
Packaging: Bulk
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-QFN (2x2)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI110N03PQ |
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Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 N 30V
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
Description: MOSFET POWERQFN 5X6 N 30V
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI110N03PQ-AQ |
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Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 N 30V
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET POWERQFN 5X6 N 30V
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PX1500K |
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Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 800V 15A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 15A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 5.21 EUR |
200+ | 3.4 EUR |
500+ | 1.68 EUR |
1000+ | 1.43 EUR |
EGL1GR13 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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LDI75L05UA |
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Hersteller: Diotec Semiconductor
Description: IC REG LINEAR 5V 100MA SOT89
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.055V @ 1mA
Description: IC REG LINEAR 5V 100MA SOT89
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.055V @ 1mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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DI072N06PT |
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Hersteller: Diotec Semiconductor
Description: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
Description: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
Produkt ist nicht verfügbar
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P6KE160A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6KE160A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.12 EUR |
P6SMBJ130A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.079 EUR |
P6SMBJ130A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 130VWM 209VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.23 EUR |
88+ | 0.2 EUR |
95+ | 0.19 EUR |
113+ | 0.16 EUR |
122+ | 0.14 EUR |
250+ | 0.13 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
P6SMBJ130A-AQ |
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Hersteller: Diotec Semiconductor
Description: IC
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: IC
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ13A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 0.51 EUR |
50+ | 0.35 EUR |
100+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.13 EUR |
P6SMBJ13A |
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Hersteller: Diotec Semiconductor
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4004GP-AQ |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 4694 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 0.3 EUR |
124+ | 0.14 EUR |
156+ | 0.11 EUR |
500+ | 0.082 EUR |
1000+ | 0.071 EUR |
2000+ | 0.064 EUR |
1N4004GP-AQ |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMFTN6001 |
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Hersteller: Diotec Semiconductor
Description: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
Description: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.035 EUR |
6000+ | 0.029 EUR |
MMFTN6001 |
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Hersteller: Diotec Semiconductor
Description: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
Description: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
auf Bestellung 6845 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.19 EUR |
130+ | 0.14 EUR |
207+ | 0.085 EUR |
500+ | 0.062 EUR |
1000+ | 0.058 EUR |
MMFTN170 |
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Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.078 EUR |
MMFTN170 |
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Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 4375 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 0.46 EUR |
56+ | 0.32 EUR |
114+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.09 EUR |
MMFTP3008K |
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Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -0.36A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET SOT-23 P -30V -0.36A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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MMFTP3008K-AQ |
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Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -0.36A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET SOT-23 P -30V -0.36A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMFTN620KD |
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Hersteller: Diotec Semiconductor
Description: IC
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-26
Description: IC
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-26
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MMFTN620KD-AQ |
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Hersteller: Diotec Semiconductor
Description: IC
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: IC
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Qualification: AEC-Q101
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MMFTP332 |
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Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -20V -1A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
Description: MOSFET SOT-23 P -20V -1A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
Produkt ist nicht verfügbar
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MMFTP5618-AQ |
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Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -60V -1.25A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET SOT-23 P -60V -1.25A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V
Qualification: AEC-Q101
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SMZ130 |
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Hersteller: Diotec Semiconductor
Description: ZENERDIODE,MELF,130V,2W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
Description: ZENERDIODE,MELF,130V,2W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 60 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1250+ | 0.42 EUR |
2500+ | 0.27 EUR |
5000+ | 0.17 EUR |
10000+ | 0.14 EUR |
SMZ13 |
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Hersteller: Diotec Semiconductor
Description: ZENERDIODE,MELF,13V,2W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 7 V
Description: ZENERDIODE,MELF,13V,2W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 7 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1250+ | 0.42 EUR |
2500+ | 0.27 EUR |
5000+ | 0.17 EUR |
10000+ | 0.14 EUR |
SMZ13 |
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Hersteller: Diotec Semiconductor
Description: IC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: IC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SMZ130 |
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Hersteller: Diotec Semiconductor
Description: IC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 104 V
Description: IC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 104 V
Produkt ist nicht verfügbar
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BC847C-C |
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Hersteller: Diotec Semiconductor
Description: TRANS NPN 50V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.16 EUR |
182+ | 0.097 EUR |
298+ | 0.059 EUR |
500+ | 0.042 EUR |
1000+ | 0.037 EUR |
BC847C-C |
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Hersteller: Diotec Semiconductor
Description: TRANS NPN 50V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SA159 |
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Hersteller: Diotec Semiconductor
Description: DIODE GP 800V 1A MELF DO-213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 1A MELF DO-213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1250+ | 0.45 EUR |
2500+ | 0.22 EUR |
5000+ | 0.11 EUR |
1N4005GP-AQ |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
ZPD30 |
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Hersteller: Diotec Semiconductor
Description: ZENER DO-35 30V 0.5W 5%
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Description: ZENER DO-35 30V 0.5W 5%
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.18 EUR |
152+ | 0.12 EUR |
183+ | 0.096 EUR |
246+ | 0.072 EUR |
297+ | 0.059 EUR |
500+ | 0.052 EUR |
1000+ | 0.045 EUR |
2500+ | 0.038 EUR |
ZPD30 |
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Hersteller: Diotec Semiconductor
Description: ZENER DO-35 30V 0.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Description: ZENER DO-35 30V 0.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.034 EUR |
US3A |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
1N4002 |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 100V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4873 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.16 EUR |
162+ | 0.11 EUR |
236+ | 0.075 EUR |
500+ | 0.054 EUR |
1000+ | 0.047 EUR |
2000+ | 0.044 EUR |
1N4002GP-AQ |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 100V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 4638 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 0.3 EUR |
113+ | 0.16 EUR |
156+ | 0.11 EUR |
500+ | 0.082 EUR |
1000+ | 0.071 EUR |
2000+ | 0.064 EUR |
1N4002GP-AQ |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 100V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5407K |
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Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 800V 3A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 3A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 0.55 EUR |
54+ | 0.33 EUR |
100+ | 0.21 EUR |
500+ | 0.15 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
1N5407K |
![]() |
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 800V 3A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 3A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH