MMFTP84W Diotec Semiconductor
auf Bestellung 2815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 0.20 EUR |
| 20+ | 0.14 EUR |
| 100+ | 0.09 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.06 EUR |
| 3000+ | 0.05 EUR |
| 9000+ | 0.04 EUR |
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Technische Details MMFTP84W Diotec Semiconductor
Description: MOSFET SOT-323 P -50V -0.13A 10?, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 130mA, Rds On (Max) @ Id, Vgs: 10Ohm @ 130mA, 10V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 45V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V.
Weitere Produktangebote MMFTP84W nach Preis ab 0.03 EUR bis 0.30 EUR
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MMFTP84W | Hersteller : Diotec Semiconductor |
 Description: MOSFET SOT-323 P -50V -0.13A 10?Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10Ohm @ 130mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 45V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMFTP84W | Hersteller : DIOTEC SEMICONDUCTOR |
MMFTP84W-DIO SMD P channel transistors |
auf Bestellung 2525 Stücke: Lieferzeit 7-14 Tag (e) |
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| MMFTP84W | Hersteller : Diotec Semiconductor |
MMFTP84W |
auf Bestellung 2525 Stücke: Lieferzeit 14-21 Tag (e) |
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MMFTP84W | Hersteller : Diotec Semiconductor |
Description: MOSFET SOT-323 P -50V -0.13A 10? Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10Ohm @ 130mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 45V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
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