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5.0SMCJ26A-AQ 5.0SMCJ26A-AQ Diotec Semiconductor 50smcj50.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 118.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DIJ2A3N65 DIJ2A3N65 Diotec Semiconductor dij2a3n65.pdf Description: MOSFET ITO-220AB N 650V 2.3A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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P6SMBJ54CA P6SMBJ54CA Diotec Semiconductor p6smbj65.pdf Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMBJ54CA-AQ P6SMBJ54CA-AQ Diotec Semiconductor p6smbj65.pdf Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZMM5.6R13 ZMM5.6R13 Diotec Semiconductor zmm1.pdf Description: ZENER SOD-80 5.6V 0.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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DI028N10PQ2-AQ DI028N10PQ2-AQ Diotec Semiconductor di028n10pq2.pdf Description: MOSFET 2N-CH 100V 28A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32.7W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK315SMA-AQ SK315SMA-AQ Diotec Semiconductor sk32sma.pdf Description: DIODE SCHOTTKY 150V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C13 BZT52C13 Diotec Semiconductor bzt52c2v4.pdf Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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S8J S8J Diotec Semiconductor s8a.pdf Description: DIODE GEN PURP 600V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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S8J S8J Diotec Semiconductor s8a.pdf Description: DIODE GEN PURP 600V 8A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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EGL1D EGL1D Diotec Semiconductor egl1a.pdf Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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EGL1D EGL1D Diotec Semiconductor egl1a.pdf Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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US3D US3D Diotec Semiconductor us3a.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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US3D US3D Diotec Semiconductor us3a.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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Z1SMA51 Z1SMA51 Diotec Semiconductor z1sma1.pdf Description: ZENER SMA 51V 1.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 38 V
Produkt ist nicht verfügbar
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DB25-10 DB25-10 Diotec Semiconductor db25005.pdf Description: BRIDGE RECT 3PHASE 1KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DB25-01 DB25-01 Diotec Semiconductor db25005.pdf Description: BRIDGE RECT 3P 100V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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DB25-14 DB25-14 Diotec Semiconductor db25005.pdf Description: BRIDGE RECT 3P 1.4KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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DB35-02 DB35-02 Diotec Semiconductor db35005.pdf Description: BRIDGE RECT 3P 200V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MMFTP3008AK MMFTP3008AK Diotec Semiconductor mmftp3008ak.pdf Description: MOSFET SOT-23 P -30V -0.23A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Produkt ist nicht verfügbar
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MMFTP3160 MMFTP3160 Diotec Semiconductor mmftp3160.pdf Description: MOSFET SOT-23 P -30V -2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Produkt ist nicht verfügbar
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MMFTP3160-AQ MMFTP3160-AQ Diotec Semiconductor mmftp3160.pdf Description: MOSFET SOT-23 P -30V -2.6A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Qualification: AEC-Q101
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MMFTP6341KW MMFTP6341KW Diotec Semiconductor mmftp6341kw.pdf Description: MOSFET SOT-363 P -30V -5A
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Produkt ist nicht verfügbar
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2CL72A 2CL72A Diotec Semiconductor 2cl72a.pdf Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
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2CL72A 2CL72A Diotec Semiconductor 2cl72a.pdf Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
Produkt ist nicht verfügbar
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SB520 SB520 Diotec Semiconductor sb520.pdf Description: DIODE SCHOTTKY 20V 5A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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BC846PN-AQ BC846PN-AQ Diotec Semiconductor bc846pn.pdf Description: TRANS NPN/PNP 65V 100MA SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C7V5 BZX84C7V5 Diotec Semiconductor bzx84c2v4.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
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BZX84C7V5 BZX84C7V5 Diotec Semiconductor bzx84c2v4.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
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3991.31.2 3991.31.2 Diotec Semiconductor 3991.31.2.pdf Description: EVAL BOARD FOR DI280N10TL
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: DI280N10TL
Secondary Attributes: On-Board Test Points
Embedded: No
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BC817K-40 BC817K-40 Diotec Semiconductor bc817k.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC817K-40 BC817K-40 Diotec Semiconductor bc817k.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BCR22PN-AQ BCR22PN-AQ Diotec Semiconductor bcr08pn.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DIW050F065 DIW050F065 Diotec Semiconductor diw050f065.pdf Description: IGBT, TO-247-3L, 650V, 50A, 300A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 350 W
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5KP16A 5KP16A Diotec Semiconductor 5kp65.pdf Description: TVS DIODE 16VWM 26VC P-600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 192A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: P-600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ120A P4SMAJ120A Diotec Semiconductor p4smaj65.pdf Description: TVS DIODE 120VWM 193VC DO-214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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GBU12D GBU12D Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 200V 8.4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBU12K GBU12K Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 8.4A 800V GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU12J GBU12J Diotec Semiconductor gbu12a.pdf Description: BRIDGE 1-PH GBU 600V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU12A GBU12A Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 8.4A 50V GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBU12G GBU12G Diotec Semiconductor gbu12a.pdf Description: BRIDGE 1-PH GBU 400V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GBU12B GBU12B Diotec Semiconductor gbu12a.pdf Description: BRIDGE RECT 1PHASE 100V 8.4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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DI075N04PT-AQ DI075N04PT-AQ Diotec Semiconductor di075n04pt.pdf Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
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DI075N04PT-AQ DI075N04PT-AQ Diotec Semiconductor di075n04pt.pdf Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
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ZMM4B7 ZMM4B7 Diotec Semiconductor zmm1-2p.pdf Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
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ZMM4B7 ZMM4B7 Diotec Semiconductor zmm1-2p.pdf Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
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BYG23T BYG23T Diotec Semiconductor byg23t.pdf Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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BYG23T-AQ BYG23T-AQ Diotec Semiconductor byg23t.pdf Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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P4KE440A P4KE440A Diotec Semiconductor p4ke68.pdf Description: TVS DIODE 376VWM 602VC DO-204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 690mA
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 602V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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PPS1045-3G PPS1045-3G Diotec Semiconductor pps1045-3g.pdf Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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PPS1045-3G PPS1045-3G Diotec Semiconductor pps1045-3g.pdf Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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S1A-CT S1A-CT Diotec Semiconductor s1a.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Strip
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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SL54-3G SL54-3G Diotec Semiconductor sl52-3g.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
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SL54-3G SL54-3G Diotec Semiconductor sl52-3g.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
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P600S P600S Diotec Semiconductor p600a.pdf Description: DIODE GEN PURP 1200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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P600S P600S Diotec Semiconductor p600a.pdf Description: DIODE GEN PURP 1200V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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1.5KE300A 1.5KE300A Diotec Semiconductor 15ke68.pdf Description: TVS DIODE 256VWM 414V AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE300A 1.5KE300A Diotec Semiconductor 15ke68.pdf Description: TVS DIODE 256VWM 414V AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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BZT52B8V2 BZT52B8V2 Diotec Semiconductor bzt52b2v4.pdf Description: ZENER SOD-123F 8.2V 0.5W 2%
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.056 EUR
6000+0.05 EUR
9000+0.047 EUR
Mindestbestellmenge: 3000
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BZT52B8V2 BZT52B8V2 Diotec Semiconductor bzt52b2v4.pdf Description: ZENER SOD-123F 8.2V 0.5W 2%
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
104+0.17 EUR
125+0.14 EUR
167+0.11 EUR
250+0.088 EUR
500+0.077 EUR
1000+0.068 EUR
Mindestbestellmenge: 63
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5.0SMCJ26A-AQ 50smcj50.pdf
5.0SMCJ26A-AQ
Hersteller: Diotec Semiconductor
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 118.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DIJ2A3N65 dij2a3n65.pdf
DIJ2A3N65
Hersteller: Diotec Semiconductor
Description: MOSFET ITO-220AB N 650V 2.3A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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P6SMBJ54CA p6smbj65.pdf
P6SMBJ54CA
Hersteller: Diotec Semiconductor
Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMBJ54CA-AQ p6smbj65.pdf
P6SMBJ54CA-AQ
Hersteller: Diotec Semiconductor
Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZMM5.6R13 zmm1.pdf
ZMM5.6R13
Hersteller: Diotec Semiconductor
Description: ZENER SOD-80 5.6V 0.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
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DI028N10PQ2-AQ di028n10pq2.pdf
DI028N10PQ2-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET 2N-CH 100V 28A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32.7W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK315SMA-AQ sk32sma.pdf
SK315SMA-AQ
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 150V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C13 bzt52c2v4.pdf
BZT52C13
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
auf Bestellung 2105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
157+0.11 EUR
246+0.072 EUR
500+0.063 EUR
1000+0.051 EUR
Mindestbestellmenge: 77
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S8J s8a.pdf
S8J
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 600V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
22+0.82 EUR
27+0.68 EUR
100+0.51 EUR
250+0.44 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 13
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S8J s8a.pdf
S8J
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 600V 8A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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EGL1D egl1a.pdf
EGL1D
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.1 EUR
Mindestbestellmenge: 2500
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EGL1D egl1a.pdf
EGL1D
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 2543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
79+0.22 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 53
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US3D us3a.pdf
US3D
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.37 EUR
500+0.28 EUR
Mindestbestellmenge: 24
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US3D us3a.pdf
US3D
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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Z1SMA51 z1sma1.pdf
Z1SMA51
Hersteller: Diotec Semiconductor
Description: ZENER SMA 51V 1.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 38 V
Produkt ist nicht verfügbar
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DB25-10 db25005.pdf
DB25-10
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 3PHASE 1KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+39.93 EUR
20+20.3 EUR
50+8.49 EUR
100+6.46 EUR
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DB25-01 db25005.pdf
DB25-01
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 3P 100V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+39.93 EUR
20+20.3 EUR
50+8.49 EUR
100+6.46 EUR
Mindestbestellmenge: 10
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DB25-14 db25005.pdf
DB25-14
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 3P 1.4KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+42.73 EUR
20+21.74 EUR
50+9.12 EUR
100+7.09 EUR
Mindestbestellmenge: 10
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DB35-02 db35005.pdf
DB35-02
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 3P 200V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+39.93 EUR
20+20.3 EUR
50+8.49 EUR
Mindestbestellmenge: 10
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MMFTP3008AK mmftp3008ak.pdf
MMFTP3008AK
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -0.23A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Produkt ist nicht verfügbar
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MMFTP3160 mmftp3160.pdf
MMFTP3160
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Produkt ist nicht verfügbar
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MMFTP3160-AQ mmftp3160.pdf
MMFTP3160-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2.6A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMFTP6341KW mmftp6341kw.pdf
MMFTP6341KW
Hersteller: Diotec Semiconductor
Description: MOSFET SOT-363 P -30V -5A
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Produkt ist nicht verfügbar
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2CL72A 2cl72a.pdf
2CL72A
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
auf Bestellung 4070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
48+0.37 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 24
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2CL72A 2cl72a.pdf
2CL72A
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
Produkt ist nicht verfügbar
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SB520 sb520.pdf
SB520
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 20V 5A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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BC846PN-AQ bc846pn.pdf
BC846PN-AQ
Hersteller: Diotec Semiconductor
Description: TRANS NPN/PNP 65V 100MA SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C7V5 bzx84c2v4.pdf
BZX84C7V5
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
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BZX84C7V5 bzx84c2v4.pdf
BZX84C7V5
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
129+0.14 EUR
210+0.084 EUR
500+0.061 EUR
Mindestbestellmenge: 77
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3991.31.2 3991.31.2.pdf
3991.31.2
Hersteller: Diotec Semiconductor
Description: EVAL BOARD FOR DI280N10TL
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: DI280N10TL
Secondary Attributes: On-Board Test Points
Embedded: No
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+300.54 EUR
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BC817K-40 bc817k.pdf
BC817K-40
Hersteller: Diotec Semiconductor
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.051 EUR
Mindestbestellmenge: 3000
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BC817K-40 bc817k.pdf
BC817K-40
Hersteller: Diotec Semiconductor
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
183+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
Mindestbestellmenge: 72
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BCR22PN-AQ bcr08pn.pdf
BCR22PN-AQ
Hersteller: Diotec Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DIW050F065 diw050f065.pdf
DIW050F065
Hersteller: Diotec Semiconductor
Description: IGBT, TO-247-3L, 650V, 50A, 300A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 350 W
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
30+3.52 EUR
120+2.95 EUR
Mindestbestellmenge: 3
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5KP16A 5kp65.pdf
5KP16A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 16VWM 26VC P-600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 192A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: P-600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ120A p4smaj65.pdf
P4SMAJ120A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 120VWM 193VC DO-214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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GBU12D gbu12a.pdf
GBU12D
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8.4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
10+2.7 EUR
100+1.83 EUR
500+1.46 EUR
Mindestbestellmenge: 5
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GBU12K gbu12a.pdf
GBU12K
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 8.4A 800V GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.37 EUR
100+1.68 EUR
500+1.38 EUR
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GBU12J gbu12a.pdf
GBU12J
Hersteller: Diotec Semiconductor
Description: BRIDGE 1-PH GBU 600V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.38 EUR
10+2.84 EUR
25+2.43 EUR
100+1.97 EUR
250+1.74 EUR
500+1.61 EUR
Mindestbestellmenge: 5
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GBU12A gbu12a.pdf
GBU12A
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 8.4A 50V GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.38 EUR
10+2.84 EUR
25+2.43 EUR
100+1.97 EUR
250+1.74 EUR
500+1.61 EUR
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GBU12G gbu12a.pdf
GBU12G
Hersteller: Diotec Semiconductor
Description: BRIDGE 1-PH GBU 400V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.38 EUR
10+2.84 EUR
25+2.43 EUR
100+1.97 EUR
250+1.74 EUR
500+1.61 EUR
Mindestbestellmenge: 5
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GBU12B gbu12a.pdf
GBU12B
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8.4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.62 EUR
100+1.8 EUR
500+1.45 EUR
Mindestbestellmenge: 5
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DI075N04PT-AQ di075n04pt.pdf
DI075N04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DI075N04PT-AQ di075n04pt.pdf
DI075N04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 40V 75A 8-POWERVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.39 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.63 EUR
Mindestbestellmenge: 8
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ZMM4B7 zmm1-2p.pdf
ZMM4B7
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Produkt ist nicht verfügbar
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ZMM4B7 zmm1-2p.pdf
ZMM4B7
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 4.7V 500MW SOD80C
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
auf Bestellung 1760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
105+0.17 EUR
114+0.16 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 77
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BYG23T byg23t.pdf
BYG23T
Hersteller: Diotec Semiconductor
Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 7475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
40+0.45 EUR
48+0.37 EUR
100+0.28 EUR
250+0.24 EUR
500+0.21 EUR
1000+0.19 EUR
2500+0.17 EUR
5000+0.15 EUR
Mindestbestellmenge: 24
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BYG23T-AQ byg23t.pdf
BYG23T-AQ
Hersteller: Diotec Semiconductor
Description: DIODE AVALANCHE 1300V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P4KE440A p4ke68.pdf
P4KE440A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 376VWM 602VC DO-204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 690mA
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 602V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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PPS1045-3G pps1045-3g.pdf
PPS1045-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar
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PPS1045-3G pps1045-3g.pdf
PPS1045-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 45V 10A TO277B
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277B
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 4929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
31+0.58 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.33 EUR
2000+0.31 EUR
Mindestbestellmenge: 18
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S1A-CT s1a.pdf
S1A-CT
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Strip
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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SL54-3G sl52-3g.pdf
SL54-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
Produkt ist nicht verfügbar
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SL54-3G sl52-3g.pdf
SL54-3G
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 40 V
auf Bestellung 2522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
41+0.44 EUR
100+0.29 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 33
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P600S p600a.pdf
P600S
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 1200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
27+0.66 EUR
100+0.45 EUR
500+0.35 EUR
Mindestbestellmenge: 18
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P600S p600a.pdf
P600S
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 1200V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.32 EUR
Mindestbestellmenge: 1000
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1.5KE300A 15ke68.pdf
1.5KE300A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 256VWM 414V AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
21+0.87 EUR
100+0.55 EUR
500+0.48 EUR
Mindestbestellmenge: 17
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1.5KE300A 15ke68.pdf
1.5KE300A
Hersteller: Diotec Semiconductor
Description: TVS DIODE 256VWM 414V AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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BZT52B8V2 bzt52b2v4.pdf
BZT52B8V2
Hersteller: Diotec Semiconductor
Description: ZENER SOD-123F 8.2V 0.5W 2%
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.05 EUR
9000+0.047 EUR
Mindestbestellmenge: 3000
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BZT52B8V2 bzt52b2v4.pdf
BZT52B8V2
Hersteller: Diotec Semiconductor
Description: ZENER SOD-123F 8.2V 0.5W 2%
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
104+0.17 EUR
125+0.14 EUR
167+0.11 EUR
250+0.088 EUR
500+0.077 EUR
1000+0.068 EUR
Mindestbestellmenge: 63
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