2N7002KPW DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.275W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.275W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 25 Stücke
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Technische Details 2N7002KPW DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 275mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V.
Weitere Produktangebote 2N7002KPW
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2N7002KPW | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 275mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V |
Produkt ist nicht verfügbar |
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2N7002KPW | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, SOT-323, 60V, 0.31A, 150C, N |
Produkt ist nicht verfügbar |
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2N7002KPW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.275W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1.2A Power dissipation: 0.275W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |