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GD5F2GM7REYIGY GigaDevice Semiconductor (HK) Limited DS-00819-GD5F2GM7RE-Rev1.2.pdf Description: LINEAR IC
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Memory Organization: 512M x 4
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, DTR
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GD5F2GM7UEWIGY GigaDevice Semiconductor (HK) Limited DS-00819-GD5F2GM7RE-Rev1.2.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
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GD5F2GM7UEYIGY GigaDevice Semiconductor (HK) Limited DS-00819-GD5F2GM7RE-Rev1.2.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ4RF9IGR GD5F2GQ4RF9IGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-LGA (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-VLGA Exposed Pad
Packaging: Tape & Reel (TR)
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GD5F2GQ4RF9IGY GD5F2GQ4RF9IGY GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-LGA (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-VLGA Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ4UEYIGR GD5F2GQ4UEYIGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 2GBIT SPI/QUAD 8WSON
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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GD5F2GQ4UEYIGY GD5F2GQ4UEYIGY GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
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GD5F2GQ4UF9IGR GD5F2GQ4UF9IGR GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-LGA (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-VLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ4UFYIGY GD5F2GQ4UFYIGY GigaDevice Semiconductor (HK) Limited gd5f2gq4xfxxg Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
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GD5F2GQ5REY2GY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Memory Organization: 512M x 4
Access Time: 11 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
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GD5F2GQ5REYIGR GigaDevice Semiconductor (HK) Limited DS-00891-GD5F2GQ5RExxG-Rev1.6.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 11 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5REYIGY GigaDevice Semiconductor (HK) Limited DS-00891-GD5F2GQ5RExxG-Rev1.6.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 11 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
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GD5F2GQ5REYIHR GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Memory Organization: 512M x 4
Access Time: 11 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
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GD5F2GQ5REYIHY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Memory Organization: 512M x 4
Access Time: 11 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5REYJGR GigaDevice Semiconductor (HK) Limited DS-00891-GD5F2GQ5RExxG-Rev1.6.pdf Description: LINEAR IC
Clock Frequency: 80 MHz
Memory Organization: 256M x 8
Access Time: 11 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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GD5F2GQ5RFBIGY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Packaging: Tray
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GD5F2GQ5RFYIGY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Packaging: Tray
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GD5F2GQ5RFZIGY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Packaging: Tray
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GD5F2GQ5UEBIGY GigaDevice Semiconductor (HK) Limited DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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GD5F2GQ5UEY2GY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5UEYIGR GigaDevice Semiconductor (HK) Limited DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5UEYIGY GigaDevice Semiconductor (HK) Limited DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
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GD5F2GQ5UEYIHR GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Memory Organization: 512M x 4
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5UEYIHY GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Memory Organization: 512M x 4
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5UEYJGR GigaDevice Semiconductor (HK) Limited DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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GD5F2GQ5UEZIGY GigaDevice Semiconductor (HK) Limited DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf Description: LINEAR IC
Package / Case: 24-TBGA
Packaging: Tray
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
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GD5F2GQ5UFYIGR GigaDevice Semiconductor (HK) Limited Description: LINEAR IC
Packaging: Tape & Reel (TR)
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GD5F4GM8REWIGR GD5F4GM8REWIGR GigaDevice Semiconductor (HK) Limited DS-00846-GD5F4GM8UE-Rev1.3.pdf Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 1G x 4
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GD5F4GM8REWIGY GD5F4GM8REWIGY GigaDevice Semiconductor (HK) Limited DS-00846-GD5F4GM8UE-Rev1.3.pdf Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 1G x 4
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GD5F4GM8UEYIGR GD5F4GM8UEYIGR GigaDevice Semiconductor (HK) Limited DS-00846-GD5F4GM8UE-Rev1.3.pdf Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
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GD5F4GM8UEYIGY GD5F4GM8UEYIGY GigaDevice Semiconductor (HK) Limited DS-00846-GD5F4GM8UE-Rev1.3.pdf Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
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GD5F4GQ4UCYIGY GD5F4GQ4UCYIGY GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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GD5F4GQ6RFYIGR GigaDevice Semiconductor (HK) Limited Description: SPI NAND FLASH 4GB WSON8
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GD5F4GQ6RFYIGR GigaDevice Semiconductor (HK) Limited Description: SPI NAND FLASH 4GB WSON8
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GD5F4GQ6RFYIGR GigaDevice Semiconductor (HK) Limited Description: SPI NAND FLASH 4GB WSON8
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GD9FS2G6F2AMGI GD9FS2G6F2AMGI GigaDevice Semiconductor (HK) Limited DS-00880-GD9FS2G8F2A-Rev1.1.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 128M x 16
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GD9FS2G8F2ALGI GigaDevice Semiconductor (HK) Limited DS-00880-GD9FS2G8F2A-Rev1.1.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
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GD9FS2G8F2ALGJ GigaDevice Semiconductor (HK) Limited Description: PARALLEL NAND FLASH
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI 1.0
Access Time: 20 ns
Memory Organization: 256M x 8
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GD9FS2G8F2AMGI GD9FS2G8F2AMGI GigaDevice Semiconductor (HK) Limited DS-00880-GD9FS2G8F2A-Rev1.1.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
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GD9FS2G8F3ALGI GigaDevice Semiconductor (HK) Limited DS-00882-GD9FS2G8F3A-Rev1.1.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
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GD9FS2G8F3AMGI GD9FS2G8F3AMGI GigaDevice Semiconductor (HK) Limited DS-00882-GD9FS2G8F3A-Rev1.1.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
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GD9FS4G8F2ALGI GigaDevice Semiconductor (HK) Limited GigaDevice-Selection-Guide-en.pdf Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
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GD9FS4G8F2ALGJ GigaDevice Semiconductor (HK) Limited PdfFile209946.pdf Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
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GD9FS4G8F2AMGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC FLASH 4GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
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GD9FS4G8F3ALGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
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GD9FS4G8F3AMGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC FLASH 4GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
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GD9FS8G8E2AMGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC FLASH 8GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 1G x 8
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GD9FS8G8E3AMGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC FLASH 8GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 1G x 8
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GD9FU1G8F2ALGI GigaDevice Semiconductor (HK) Limited GigaDevice-Selection-Guide-en.pdf Description: IC FLASH 1GBIT PAR 63FBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 8
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GD9FU1G8F2AMGI GD9FU1G8F2AMGI GigaDevice Semiconductor (HK) Limited GD9Fx1GxF2A_v2.2_May-17-2018_DS.pdf Description: SLC NAND FLASH
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GD9FU1G8F3ALGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 128M x 8
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GD9FU2G6F3ALGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 128M x 16
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GD9FU2G8F2ALGI GigaDevice Semiconductor (HK) Limited GigaDevice-Selection-Guide-en.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FU2G8F2ALGJ GigaDevice Semiconductor (HK) Limited Description: PARALLEL NAND FLASH
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI 1.0
Access Time: 18 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FU2G8F3ALGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 256M x 8
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GD9FU4G8F2ALGI GigaDevice Semiconductor (HK) Limited GigaDevice-Selection-Guide-en.pdf Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 512M x 8
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GD9FU4G8F3ALGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 512M x 8
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GD9FU4G8F3ALGJ GigaDevice Semiconductor (HK) Limited Description: IC FLASH
Memory Format: FLASH
Technology: FLASH - NAND
Packaging: Tray
Produkt ist nicht verfügbar
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GD9FU8G8E3ALGI GigaDevice Semiconductor (HK) Limited DS-00884-GD9FS4G8F2A-Rev1.2.pdf Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 1G x 8
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GD5F2GM7REYIGY DS-00819-GD5F2GM7RE-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Memory Organization: 512M x 4
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, DTR
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GD5F2GM7UEWIGY DS-00819-GD5F2GM7RE-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GM7UEYIGY DS-00819-GD5F2GM7RE-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 7 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ4RF9IGR 2023__Gde.pdf
GD5F2GQ4RF9IGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-LGA (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-VLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ4RF9IGY 2023__Gde.pdf
GD5F2GQ4RF9IGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-LGA (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-VLGA Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ4UEYIGR 2023__Gde.pdf
GD5F2GQ4UEYIGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ4UEYIGY 2023__Gde.pdf
GD5F2GQ4UEYIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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GD5F2GQ4UF9IGR 2023__Gde.pdf
GD5F2GQ4UF9IGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-LGA (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-VLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ4UFYIGY gd5f2gq4xfxxg
GD5F2GQ4UFYIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT SPI/QUAD 8WSON
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 700µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 120 MHz
Technology: FLASH - NAND
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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GD5F2GQ5REY2GY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Memory Organization: 512M x 4
Access Time: 11 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Produkt ist nicht verfügbar
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GD5F2GQ5REYIGR DS-00891-GD5F2GQ5RExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 11 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5REYIGY DS-00891-GD5F2GQ5RExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 11 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5REYIHR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Memory Organization: 512M x 4
Access Time: 11 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Produkt ist nicht verfügbar
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GD5F2GQ5REYIHY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 512M x 4
Access Time: 11 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5REYJGR DS-00891-GD5F2GQ5RExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Clock Frequency: 80 MHz
Memory Organization: 256M x 8
Access Time: 11 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5RFBIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5RFYIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5RFZIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5UEBIGY DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5UEY2GY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5UEYIGR DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5UEYIGY DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5UEYIHR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 512M x 4
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5UEYIHY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 512M x 4
Access Time: 9 ns
Memory Interface: SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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GD5F2GQ5UEYJGR DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F2GQ5UEZIGY DS-00890-GD5F2GQ5UExxG-Rev1.6.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Package / Case: 24-TBGA
Packaging: Tray
Memory Organization: 256M x 8
Access Time: 9 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 600µs
Supplier Device Package: 24-TFBGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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GD5F2GQ5UFYIGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GD5F4GM8REWIGR DS-00846-GD5F4GM8UE-Rev1.3.pdf
GD5F4GM8REWIGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 1G x 4
Produkt ist nicht verfügbar
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GD5F4GM8REWIGY DS-00846-GD5F4GM8UE-Rev1.3.pdf
GD5F4GM8REWIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 9 ns
Memory Organization: 1G x 4
Produkt ist nicht verfügbar
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GD5F4GM8UEYIGR DS-00846-GD5F4GM8UE-Rev1.3.pdf
GD5F4GM8UEYIGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
Produkt ist nicht verfügbar
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GD5F4GM8UEYIGY DS-00846-GD5F4GM8UE-Rev1.3.pdf
GD5F4GM8UEYIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
Produkt ist nicht verfügbar
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GD5F4GQ4UCYIGY 2023__Gde.pdf
GD5F4GQ4UCYIGY
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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GD5F4GQ6RFYIGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: SPI NAND FLASH 4GB WSON8
Produkt ist nicht verfügbar
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GD5F4GQ6RFYIGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: SPI NAND FLASH 4GB WSON8
Produkt ist nicht verfügbar
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GD5F4GQ6RFYIGR
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: SPI NAND FLASH 4GB WSON8
Produkt ist nicht verfügbar
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GD9FS2G6F2AMGI DS-00880-GD9FS2G8F2A-Rev1.1.pdf
GD9FS2G6F2AMGI
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
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GD9FS2G8F2ALGI DS-00880-GD9FS2G8F2A-Rev1.1.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FS2G8F2ALGJ
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: PARALLEL NAND FLASH
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI 1.0
Access Time: 20 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FS2G8F2AMGI DS-00880-GD9FS2G8F2A-Rev1.1.pdf
GD9FS2G8F2AMGI
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FS2G8F3ALGI DS-00882-GD9FS2G8F3A-Rev1.1.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FS2G8F3AMGI DS-00882-GD9FS2G8F3A-Rev1.1.pdf
GD9FS2G8F3AMGI
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 20 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FS4G8F2ALGI GigaDevice-Selection-Guide-en.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
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GD9FS4G8F2ALGJ PdfFile209946.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
Produkt ist nicht verfügbar
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GD9FS4G8F2AMGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
Produkt ist nicht verfügbar
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GD9FS4G8F3ALGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
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GD9FS4G8F3AMGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 512M x 8
Produkt ist nicht verfügbar
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GD9FS8G8E2AMGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 1G x 8
Produkt ist nicht verfügbar
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GD9FS8G8E3AMGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8GBIT ONFI 48TSOPI
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns
Memory Interface: ONFI
Access Time: 22 ns
Memory Organization: 1G x 8
Produkt ist nicht verfügbar
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GD9FU1G8F2ALGI GigaDevice-Selection-Guide-en.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT PAR 63FBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 8
Produkt ist nicht verfügbar
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GD9FU1G8F2AMGI GD9Fx1GxF2A_v2.2_May-17-2018_DS.pdf
GD9FU1G8F2AMGI
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: SLC NAND FLASH
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GD9FU1G8F3ALGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 128M x 8
Produkt ist nicht verfügbar
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GD9FU2G6F3ALGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
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GD9FU2G8F2ALGI GigaDevice-Selection-Guide-en.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FU2G8F2ALGJ
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: PARALLEL NAND FLASH
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI 1.0
Access Time: 18 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FU2G8F3ALGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 2GBIT ONFI
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 256M x 8
Produkt ist nicht verfügbar
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GD9FU4G8F2ALGI GigaDevice-Selection-Guide-en.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 512M x 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
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GD9FU4G8F3ALGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 512M x 8
Produkt ist nicht verfügbar
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GD9FU4G8F3ALGJ
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH
Memory Format: FLASH
Technology: FLASH - NAND
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
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GD9FU8G8E3ALGI DS-00884-GD9FS4G8F2A-Rev1.2.pdf
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC MEMORY
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-FBGA (9x11)
Write Cycle Time - Word, Page: 20ns
Memory Interface: ONFI
Access Time: 18 ns
Memory Organization: 1G x 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
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