Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126470) > Seite 151 nach 2108
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IRFH5302DTR2PBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 29A 8VQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRFH5304TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 22A 8VQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRLH5030TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 13A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRLML2060TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 1.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V |
auf Bestellung 35027 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR8259TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 57A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRLR8259TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 57A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR3871MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 8A PQFN Packaging: Tape & Reel (TR) Package / Case: 17-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 8A Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 1MHz Voltage - Input (Max): 26V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 12V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.5V |
Produkt ist nicht verfügbar |
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CY14B104M-ZSP45XI | Infineon Technologies |
Description: IC NVSRAM 4MBIT PAR 54TSOP II Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B104NA-ZSP25XI | Infineon Technologies |
Description: IC NVSRAM 4MBIT PAR 54TSOP II Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 178 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B104NA-ZSP45XI | Infineon Technologies |
Description: IC NVSRAM 4MBIT PAR 54TSOP II Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B108K-ZS25XI | Infineon Technologies |
Description: IC NVSRAM 8MBIT PAR 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B108L-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 8MBIT PAR 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B108N-BA45XI | Infineon Technologies |
Description: IC NVSRAM 8MBIT PARALLEL 48FBGA Packaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-FBGA (6x10) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CPLC20-48LTXI | Infineon Technologies |
Description: IC PLC PSOC CMOS 48QFN Supplier Device Package: 48-QFN (7x7) Data Format: FSK Voltage - Supply: 4.75V ~ 5.25V Baud Rates: 2.4k Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tray |
auf Bestellung 1140 Stücke: Lieferzeit 10-14 Tag (e) |
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CY14B101KA-SP25XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP Packaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-SSOP Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 247 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20111-SX1IT | Infineon Technologies |
Description: IC CAPSENSE EXP 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.4V ~ 5.25V Current - Supply: 1.5mA Number of Inputs: Up to 1 Supplier Device Package: 8-SOIC Proximity Detection: No LED Driver Channels: Up to 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY8C20396A-24LQXIT | Infineon Technologies |
Description: IC MCU PSOC 16K FLASH 2K 24QFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY8C28243-24PVXIT | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 20SSOP Packaging: Tape & Reel (TR) Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I²C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 20-SSOP Number of I/O: 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY8C28452-24PVXIT | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 28SSOP Packaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I²C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY8C28623-24LTXIT | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 48QFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I²C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Part Status: Obsolete Number of I/O: 44 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CY8CPLC20-28PVXIT | Infineon Technologies |
Description: IC PLC PSOC CMOS 28SSOP Packaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Baud Rates: 2.4k Voltage - Supply: 4.75V ~ 5.25V Data Format: FSK Supplier Device Package: 28-SSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CYWB0226ABM-BVXIT | Infineon Technologies |
Description: IC WEST BRIDGE ASTORIA 100VFBGA Packaging: Tape & Reel (TR) Package / Case: 100-VFBGA Function: Controller Interface: Parallel Voltage - Supply: 1.8V ~ 3.3V Protocol: USB, Memory Card Standards: USB 2.0 Supplier Device Package: 100-VFBGA (6x6) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BA892H6127XTSA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SCD80 Packaging: Tape & Reel (TR) Package / Case: SC-80 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SCD-80 Part Status: Obsolete Current - Max: 100 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BA892H6327XTSA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SCD80 Packaging: Tape & Reel (TR) Package / Case: SC-80 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SCD-80 Part Status: Obsolete Current - Max: 100 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BA892H6433XTMA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SCD80 Packaging: Tape & Reel (TR) Package / Case: SC-80 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SCD-80 Part Status: Obsolete Current - Max: 100 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BA892H6770XTSA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SCD80 Packaging: Tape & Reel (TR) Package / Case: SC-80 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SCD-80 Part Status: Obsolete Current - Max: 100 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BA89202VH6127XTSA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SC79-2 Part Status: Not For New Designs Current - Max: 100 mA |
auf Bestellung 64000 Stücke: Lieferzeit 10-14 Tag (e) |
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BA89202VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SC79-2 Part Status: Obsolete Current - Max: 100 mA |
Produkt ist nicht verfügbar |
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BA89202VH6433XTMA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SC79-2 Part Status: Obsolete Current - Max: 100 mA |
Produkt ist nicht verfügbar |
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BA895H6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V SCD-80 Packaging: Tape & Reel (TR) Package / Case: SC-80 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: SCD-80 Current - Max: 50 mA |
Produkt ist nicht verfügbar |
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BAR5002VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW PG-SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR5003WE6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW SOD323-2 |
Produkt ist nicht verfügbar |
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BAR6302VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW PG-SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
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BAR6302WH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW SCD-80 Packaging: Tape & Reel (TR) Package / Case: SC-80 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: SCD-80 Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
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BAR 63-02W H6433 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW SCD-80 Packaging: Tape & Reel (TR) Package / Case: SC-80 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: SCD-80 Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAR6306WH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW PG-SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT323 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAR6402VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
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BAR6404WH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT323 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
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BAR6405WH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT323 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
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BAR 64-05W H6433 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT323 Part Status: Obsolete Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAR6406WH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT323 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6502VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 30V 250MW PG-SC79-2 Power Dissipation (Max): 250 mW Current - Max: 100 mA Part Status: Active Supplier Device Package: PG-SC79-2 Voltage - Peak Reverse (Max): 30V Resistance @ If, F: 900mOhm @ 10mA, 100MHz Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - Single Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR66E6433HTMA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW PG-SOT23 Power Dissipation (Max): 250 mW Current - Max: 200 mA Supplier Device Package: PG-SOT23 Voltage - Peak Reverse (Max): 150V Resistance @ If, F: 1.8Ohm @ 5mA, 100MHz Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz Diode Type: PIN - 1 Pair Series Connection Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAR81WH6327XTSA1 | Infineon Technologies |
Description: DIODE STANDAR 30V 100MW SOT343-4 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz Resistance @ If, F: 1Ohm @ 5mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: PG-SOT343-4-2 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 100 mW |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR8802VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 80V 250MW PG-SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz Resistance @ If, F: 600mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 80V Supplier Device Package: PG-SC79-2 Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS1602VH6327XTSA1 | Infineon Technologies |
Description: DIODE STANDARD 80V 200MA PGSC792 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS1602WH6327XTSA1 | Infineon Technologies |
Description: DIODE GEN PURP 80V 200MA SCD80-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS16SH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR GP 80V 200MA SOT363-PO Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT363-PO Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS16WH6327XTSA1 | Infineon Technologies |
Description: DIODE STD 80V 250MA PGSOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 45000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS28WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR GP 80V 200MA SOT34343 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT343-4-3 Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS3005A02VH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 30V 500MA PGSC792 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 15pF @ 5V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS3005B02VH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 30V 500MA PGSC792 Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 25 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: PG-SC79-2 Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 10pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS3020BH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 30V 2A SOT363-PO Current - Reverse Leakage @ Vr: 200 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: PG-SOT363-PO Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 70pF @ 1V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS5202VH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 45V 750MA PGSC792 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 45 V |
auf Bestellung 600000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS7002WH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 70V 70MA SCD80-2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 27000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS7004SH6727XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V SOT363-6-1 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT363-6-1 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS7004WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V 70MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS7005WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V 70MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAT1504RE6327HTSA1 | Infineon Technologies |
Description: RF DIODE SCHOTTKY 4V PG-SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz Resistance @ If, F: 18Ohm @ 5mA, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT23 Part Status: Obsolete Current - Max: 110 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAT1504WH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 100MW SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323 Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFH5302DTR2PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 29A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Description: MOSFET N-CH 30V 29A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5304TR2PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Description: MOSFET N-CH 30V 22A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLH5030TR2PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
Description: MOSFET N-CH 100V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLML2060TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
auf Bestellung 35027 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 47+ | 0.45 EUR |
| 65+ | 0.32 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| IRLR8259TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLR8259TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR3871MTRPBF |
|
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 26V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 26V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY14B104M-ZSP45XI |
|
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.43 EUR |
| 10+ | 45.35 EUR |
| CY14B104NA-ZSP25XI |
|
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 64.05 EUR |
| 10+ | 56.83 EUR |
| 25+ | 54.19 EUR |
| 40+ | 52.88 EUR |
| 108+ | 50.22 EUR |
| CY14B104NA-ZSP45XI |
|
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 63.99 EUR |
| 10+ | 56.79 EUR |
| 25+ | 54.14 EUR |
| 40+ | 52.84 EUR |
| 108+ | 50.18 EUR |
| CY14B108K-ZS25XI |
|
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 90.71 EUR |
| CY14B108L-ZS45XI |
|
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 145.51 EUR |
| 10+ | 134.29 EUR |
| 25+ | 129.91 EUR |
| 50+ | 126.64 EUR |
| 135+ | 122.06 EUR |
| CY14B108N-BA45XI |
|
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC NVSRAM 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 77.89 EUR |
| 10+ | 71.94 EUR |
| 25+ | 69.6 EUR |
| 50+ | 67.87 EUR |
| 100+ | 66.21 EUR |
| CY8CPLC20-48LTXI |
|
Hersteller: Infineon Technologies
Description: IC PLC PSOC CMOS 48QFN
Supplier Device Package: 48-QFN (7x7)
Data Format: FSK
Voltage - Supply: 4.75V ~ 5.25V
Baud Rates: 2.4k
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Description: IC PLC PSOC CMOS 48QFN
Supplier Device Package: 48-QFN (7x7)
Data Format: FSK
Voltage - Supply: 4.75V ~ 5.25V
Baud Rates: 2.4k
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
auf Bestellung 1140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.3 EUR |
| 10+ | 36.33 EUR |
| 25+ | 34.09 EUR |
| 100+ | 31.63 EUR |
| 260+ | 30.42 EUR |
| 520+ | 29.71 EUR |
| CY14B101KA-SP25XI |
|
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 57.99 EUR |
| 10+ | 54.53 EUR |
| 30+ | 52.63 EUR |
| 60+ | 50.97 EUR |
| 120+ | 44.87 EUR |
| CY8C20111-SX1IT |
Hersteller: Infineon Technologies
Description: IC CAPSENSE EXP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 1
Supplier Device Package: 8-SOIC
Proximity Detection: No
LED Driver Channels: Up to 1
DigiKey Programmable: Not Verified
Description: IC CAPSENSE EXP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 1
Supplier Device Package: 8-SOIC
Proximity Detection: No
LED Driver Channels: Up to 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C20396A-24LQXIT |
|
Hersteller: Infineon Technologies
Description: IC MCU PSOC 16K FLASH 2K 24QFN
Description: IC MCU PSOC 16K FLASH 2K 24QFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| CY8C28243-24PVXIT |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CY8C28452-24PVXIT |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C28623-24LTXIT |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8CPLC20-28PVXIT |
|
Hersteller: Infineon Technologies
Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYWB0226ABM-BVXIT |
|
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE ASTORIA 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Description: IC WEST BRIDGE ASTORIA 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA892H6127XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA892H6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA892H6433XTMA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA892H6770XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA89202VH6127XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Not For New Designs
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Not For New Designs
Current - Max: 100 mA
auf Bestellung 64000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.11 EUR |
| 16000+ | 0.1 EUR |
| 24000+ | 0.1 EUR |
| 40000+ | 0.1 EUR |
| 56000+ | 0.1 EUR |
| BA89202VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA89202VH6433XTMA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA895H6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 50 mA
Description: RF DIODE PIN 50V SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR5002VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.096 EUR |
| 6000+ | 0.093 EUR |
| BAR5003WE6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SOD323-2
Description: RF DIODE PIN 50V 250MW SOD323-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6302VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6302WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR 63-02W H6433 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6306WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6402VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6404WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6405WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR 64-05W H6433 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR6406WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| BAR6502VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.087 EUR |
| 6000+ | 0.084 EUR |
| BAR66E6433HTMA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 200 mA
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 150V
Resistance @ If, F: 1.8Ohm @ 5mA, 100MHz
Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF DIODE PIN 150V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 200 mA
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 150V
Resistance @ If, F: 1.8Ohm @ 5mA, 100MHz
Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAR81WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.51 EUR |
| 6000+ | 0.5 EUR |
| 15000+ | 0.49 EUR |
| BAR8802VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 600mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-SC79-2
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 80V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 600mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-SC79-2
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS1602VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS1602WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SCD80-2
Description: DIODE GEN PURP 80V 200MA SCD80-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16SH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| 9000+ | 0.13 EUR |
| BAS16WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE STD 80V 250MA PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STD 80V 250MA PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 45000 Stücke
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Stück im Wert von UAH
| BAS28WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT34343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Description: DIODE ARR GP 80V 200MA SOT34343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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Stück im Wert von UAH
| BAS3005A02VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 500MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 500MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BAS3005B02VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 500MA PGSC792
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 25 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: PG-SC79-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 30V 500MA PGSC792
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 25 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: PG-SC79-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| 9000+ | 0.13 EUR |
| 21000+ | 0.12 EUR |
| BAS3020BH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 2A SOT363-PO
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: PG-SOT363-PO
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A SOT363-PO
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: PG-SOT363-PO
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS5202VH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 45V 750MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 45 V
Description: DIODE SCHOTTKY 45V 750MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 45 V
auf Bestellung 600000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.2 EUR |
| 15000+ | 0.19 EUR |
| 21000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
| BAS7002WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SCD80-2
Description: DIODE SCHOTTKY 70V 70MA SCD80-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 27000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS7004SH6727XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V SOT363-6-1
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-6-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V SOT363-6-1
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-6-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS7004WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| BAS7005WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT1504RE6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 4V PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Max: 110 mA
Description: RF DIODE SCHOTTKY 4V PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Max: 110 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT1504WH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 4V 100MW SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.4 EUR |
| 15000+ | 0.39 EUR |