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BAS140WE6327
Produktcode: 117616
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Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Dioden, Diodenbrücken, Zenerdioden > Schottkydioden
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BAS140WE6327HTSA1
Produktcode: 144159
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Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Dioden, Diodenbrücken, Zenerdioden > Schottkydioden
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TLE9251VLEXUMA1
Produktcode: 163586
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Infineon Technologies Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b IC > IC Interface
Gehäuse: TSON
Eigenschaften: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
auf Bestellung 20 St.:
Lieferzeit 21-28 Tag (e)
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IRGPC40UD2 IRGPC40UD2 Infineon Technologies irgpc40ud2.pdf Description: IGBT W/DIODE 600V 40A TO-247AC
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGBC30UD2 IRGBC30UD2 Infineon Technologies IRGBC30UD2.pdf Description: IGBT 600V 23A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGBC20FD2 IRGBC20FD2 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT W/DIODE 600V 16A TO-220AB
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Supplier Device Package: TO-220AB
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGPF50F IRGPF50F Infineon Technologies irgpf50f.pdf Description: IGBT 900V 51A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGPC50F IRGPC50F Infineon Technologies irgpc50f.pdf Description: IGBT FAST 600V 70A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGBC40S IRGBC40S Infineon Technologies IRGBC40S.pdf Description: IGBT 600V 50A TO-220AB
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGBC30S IRGBC30S Infineon Technologies IRGBC30S.pdf Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 18A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
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IRGPC50UD2 IRGPC50UD2 Infineon Technologies irgpc50ud2.pdf Description: IGBT 600V 55A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
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IRGPC50FD2 IRGPC50FD2 Infineon Technologies irgpc50fd2.pdf Description: IGBT W/DIODE 600V 70A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGPC40FD2 IRGPC40FD2 Infineon Technologies irgpc40fd2.pdf Description: IGBT W/DIODE 600V 49A TO-247AC
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 49 A
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IRGPC30FD2 IRGPC30FD2 Infineon Technologies IRGPC30FD2.pdf Description: IGBT W/DIODE 600V 31A TO-247AC
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGBC20UD2 IRGBC20UD2 Infineon Technologies IRGBC20UD2.pdf Description: IGBT W/DIODE 600V 13A TO-220AB
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGBC30FD2 IRGBC30FD2 Infineon Technologies IRGBC30FD2.pdf Description: IGBT 600V 31A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGPH50F IRGPH50F Infineon Technologies irgph50f.pdf Description: IGBT 1200V 45A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 45 A
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGPH40F IRGPH40F Infineon Technologies irgph40f.pdf Description: IGBT FAST 1200V 29A TO-247AC
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IRGPF40F IRGPF40F Infineon Technologies irgpf40f.pdf Description: IGBT FAST 900V 31A TO-247AC
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IRGPC50U IRGPC50U Infineon Technologies irgpc50ud2.pdf Description: IGBT 600V 55A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 55 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGPC40U IRGPC40U Infineon Technologies irgpc40u.pdf Description: IGBT UFAST 600V 40A TO-247AC
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Produkt ist nicht verfügbar
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IRGPC40S IRGPC40S Infineon Technologies irgpc40s.pdf Description: IGBT STD 600V 50A TO-247AC
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGBC40U IRGBC40U Infineon Technologies IRGBC40U.pdf Description: IGBT 600V 40A TO-220AB
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGBF20F IRGBF20F Infineon Technologies IRGBF20F.pdf Description: IGBT FAST 900V 20A TO-220AB
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 9 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5.3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBC30U IRGBC30U Infineon Technologies IRGBC30U.pdf Description: IGBT 600V 23A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGBC30F IRGBC30F Infineon Technologies IRGBC30F.pdf Description: IGBT 600V 31A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRGBC20U IRGBC20U Infineon Technologies IRGBC20U.pdf Description: IGBT UFAST 600V 13A TO-220AB
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IR2104S IR2104S Infineon Technologies ir2104.pdf?fileId=5546d462533600a4015355c7c1c31671 description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRSF3010 IRSF3010 Infineon Technologies irsf3010.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: TO-220AB
Ratio - Input:Output: 1:1
Current - Output (Max): 11A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 50V (Max)
Input Type: Non-Inverting
Rds On (Typ): 53mOhm
Output Configuration: Low Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Packaging: Tube
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IRF7106 IRF7106 Infineon Technologies IRF7106-Datasheet.pdf Description: MOSFET N/P-CH 20V 3A/2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7204TR IRF7204TR Infineon Technologies IRF7204.pdf Description: MOSFET P-CH 20V 5.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 155°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
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IRF7102 IRF7102 Infineon Technologies IRF7102-Datasheet.PDF Description: MOSFET 2N-CH 50V 2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7201 IRF7201 Infineon Technologies IRF7201.pdf description Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
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IR2151 IR2151 Infineon Technologies ir2151.pdf description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
DigiKey Programmable: Not Verified
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PVR3300 PVR3300 Infineon Technologies pvr33.pdf Description: SSR RELAY DPST-NO 180MA 0-300V
On-State Resistance (Max): 24 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Obsolete
Supplier Device Package: 16-DIP
Load Current: 180 mA
Termination Style: PC Pin
Circuit: DPST-NO (2 Form A) x 2
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Packaging: Tube
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PVT412 PVT412 Infineon Technologies pvt412.pdf?fileId=5546d462533600a401535684376e296b description Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 140 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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PVT412L PVT412L Infineon Technologies pvt412.pdf?fileId=5546d462533600a401535684376e296b description Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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PVU414 PVU414 Infineon Technologies pvu414.pdf?fileId=5546d462533600a4015356844deb2976 Description: SSR RELAY SPST-NO 140MA 0-400V
On-State Resistance (Max): 27 Ohms
Relay Type: Photo-Coupled Relay (Photorelay)
Voltage - Load: 0 V ~ 400 V
Supplier Device Package: 6-DIP
Load Current: 140 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
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PVI1050 PVI1050 Infineon Technologies PVI%20Series.pdf Description: OPTOISO 2.5KV 1CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V, 10V
Part Status: Obsolete
Number of Channels: 1
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PVI5050 PVI5050 Infineon Technologies PVI%20Series.pdf Description: IC ISO PHOTOVOLTC 5V-OUT 8-DIP
Number of Channels: 1
Part Status: Obsolete
Voltage - Output (Max): 5V
Supplier Device Package: 8-DIP
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 5µA
Input Type: DC
Mounting Type: Through Hole
Output Type: Photovoltaic
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Packaging: Tube
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PVA1354 PVA1354 Infineon Technologies pva13.pdf Description: SSR RELAY SPST-NO 300MA 0-100V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-DIP Modified
Load Current: 300 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
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PVA3354 PVA3354 Infineon Technologies pva33.pdf Description: SSR RELAY SPST-NO 130MA 0-300V
On-State Resistance (Max): 24 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Obsolete
Supplier Device Package: 8-DIP Modified
Load Current: 130 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IRF520N IRF520N Infineon Technologies IRF520N.pdf Description: MOSFET N-CH 100V 9.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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94-2304 94-2304 Infineon Technologies IRL2203N.pdf Description: MOSFET N-CH 30V 116A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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IRL3803 IRL3803 Infineon Technologies irl3803pbf.pdf?fileId=5546d462533600a40153565f80172554 Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
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IRFL4105TR IRFL4105TR Infineon Technologies IRFL4105.pdf Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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IRLL3303TR IRLL3303TR Infineon Technologies irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
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IRFP044N IRFP044N Infineon Technologies irfp044npbf.pdf?fileId=5546d462533600a40153562820731fc2 Description: MOSFET N-CH 55V 53A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRFP054N IRFP054N Infineon Technologies irfp054npbf.pdf?fileId=5546d462533600a40153562831f21fc6 description Description: MOSFET N-CH 55V 81A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRFR1205 IRFR1205 Infineon Technologies IRFR%2CU1205.pdf description Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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94-4762 94-4762 Infineon Technologies irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9 Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFL4105TR IRFL4105TR Infineon Technologies IRFL4105.pdf Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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IRFL4310TR IRFL4310TR Infineon Technologies IRFL4310.pdf Description: MOSFET N-CH 100V 1.6A SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
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IRLL2705TR IRLL2705TR Infineon Technologies IRLL2705.pdf Description: MOSFET N-CH 55V 3.8A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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94-2310 94-2310 Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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PVDZ172N PVDZ172N Infineon Technologies pvdz172.pdf?fileId=5546d462533600a401535683ba592934 description Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
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PVAZ172N PVAZ172N Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
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PVN012 PVN012 Infineon Technologies pvn012.pdf?fileId=5546d462533600a401535683f185294d Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
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PVG612 PVG612 Infineon Technologies pvg612.pdf?fileId=5546d462533600a401535683c1892937 description Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
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PVT422 PVT422 Infineon Technologies pvt422.pdf?fileId=5546d462533600a401535684473f2973 Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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BAS140WE6327
Produktcode: 117616
zu Favoriten hinzufügen Lieblingsprodukt
INFNS11688-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Dioden, Diodenbrücken, Zenerdioden > Schottkydioden
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BAS140WE6327HTSA1
Produktcode: 144159
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INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Dioden, Diodenbrücken, Zenerdioden > Schottkydioden
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TLE9251VLEXUMA1
Produktcode: 163586
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Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b
Hersteller: Infineon Technologies
IC > IC Interface
Gehäuse: TSON
Eigenschaften: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
auf Bestellung 20 St.:
Lieferzeit 21-28 Tag (e)
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IRGPC40UD2 irgpc40ud2.pdf
IRGPC40UD2
Hersteller: Infineon Technologies
Description: IGBT W/DIODE 600V 40A TO-247AC
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGBC30UD2 IRGBC30UD2.pdf
IRGBC30UD2
Hersteller: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBC20FD2 fundamentals-of-power-semiconductors
IRGBC20FD2
Hersteller: Infineon Technologies
Description: IGBT W/DIODE 600V 16A TO-220AB
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Supplier Device Package: TO-220AB
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGPF50F irgpf50f.pdf
IRGPF50F
Hersteller: Infineon Technologies
Description: IGBT 900V 51A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGPC50F irgpc50f.pdf
IRGPC50F
Hersteller: Infineon Technologies
Description: IGBT FAST 600V 70A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGBC40S IRGBC40S.pdf
IRGBC40S
Hersteller: Infineon Technologies
Description: IGBT 600V 50A TO-220AB
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBC30S IRGBC30S.pdf
IRGBC30S
Hersteller: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 18A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRGPC50UD2 irgpc50ud2.pdf
IRGPC50UD2
Hersteller: Infineon Technologies
Description: IGBT 600V 55A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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IRGPC50FD2 irgpc50fd2.pdf
IRGPC50FD2
Hersteller: Infineon Technologies
Description: IGBT W/DIODE 600V 70A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGPC40FD2 irgpc40fd2.pdf
IRGPC40FD2
Hersteller: Infineon Technologies
Description: IGBT W/DIODE 600V 49A TO-247AC
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 49 A
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IRGPC30FD2 IRGPC30FD2.pdf
IRGPC30FD2
Hersteller: Infineon Technologies
Description: IGBT W/DIODE 600V 31A TO-247AC
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGBC20UD2 IRGBC20UD2.pdf
IRGBC20UD2
Hersteller: Infineon Technologies
Description: IGBT W/DIODE 600V 13A TO-220AB
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBC30FD2 IRGBC30FD2.pdf
IRGBC30FD2
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGPH50F irgph50f.pdf
IRGPH50F
Hersteller: Infineon Technologies
Description: IGBT 1200V 45A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 45 A
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGPH40F irgph40f.pdf
IRGPH40F
Hersteller: Infineon Technologies
Description: IGBT FAST 1200V 29A TO-247AC
Produkt ist nicht verfügbar
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IRGPF40F irgpf40f.pdf
IRGPF40F
Hersteller: Infineon Technologies
Description: IGBT FAST 900V 31A TO-247AC
Produkt ist nicht verfügbar
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IRGPC50U irgpc50ud2.pdf
IRGPC50U
Hersteller: Infineon Technologies
Description: IGBT 600V 55A TO-247AC
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 55 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRGPC40U irgpc40u.pdf
IRGPC40U
Hersteller: Infineon Technologies
Description: IGBT UFAST 600V 40A TO-247AC
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
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IRGPC40S irgpc40s.pdf
IRGPC40S
Hersteller: Infineon Technologies
Description: IGBT STD 600V 50A TO-247AC
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
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IRGBC40U IRGBC40U.pdf
IRGBC40U
Hersteller: Infineon Technologies
Description: IGBT 600V 40A TO-220AB
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBF20F IRGBF20F.pdf
IRGBF20F
Hersteller: Infineon Technologies
Description: IGBT FAST 900V 20A TO-220AB
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 9 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5.3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBC30U IRGBC30U.pdf
IRGBC30U
Hersteller: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBC30F IRGBC30F.pdf
IRGBC30F
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGBC20U IRGBC20U.pdf
IRGBC20U
Hersteller: Infineon Technologies
Description: IGBT UFAST 600V 13A TO-220AB
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IR2104S description ir2104.pdf?fileId=5546d462533600a4015355c7c1c31671
IR2104S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRSF3010 irsf3010.pdf
IRSF3010
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: TO-220AB
Ratio - Input:Output: 1:1
Current - Output (Max): 11A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 50V (Max)
Input Type: Non-Inverting
Rds On (Typ): 53mOhm
Output Configuration: Low Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRF7106 IRF7106-Datasheet.pdf
IRF7106
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 3A/2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF7204TR IRF7204.pdf
IRF7204TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 5.3A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 155°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
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IRF7102 IRF7102-Datasheet.PDF
IRF7102
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 50V 2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF7201 description IRF7201.pdf
IRF7201
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
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IR2151 description ir2151.pdf
IR2151
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
DigiKey Programmable: Not Verified
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PVR3300 pvr33.pdf
PVR3300
Hersteller: Infineon Technologies
Description: SSR RELAY DPST-NO 180MA 0-300V
On-State Resistance (Max): 24 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Obsolete
Supplier Device Package: 16-DIP
Load Current: 180 mA
Termination Style: PC Pin
Circuit: DPST-NO (2 Form A) x 2
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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PVT412 description pvt412.pdf?fileId=5546d462533600a401535684376e296b
PVT412
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 140 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Produkt ist nicht verfügbar
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PVT412L description pvt412.pdf?fileId=5546d462533600a401535684376e296b
PVT412L
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Produkt ist nicht verfügbar
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PVU414 pvu414.pdf?fileId=5546d462533600a4015356844deb2976
PVU414
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 140MA 0-400V
On-State Resistance (Max): 27 Ohms
Relay Type: Photo-Coupled Relay (Photorelay)
Voltage - Load: 0 V ~ 400 V
Supplier Device Package: 6-DIP
Load Current: 140 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
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PVI1050 PVI%20Series.pdf
PVI1050
Hersteller: Infineon Technologies
Description: OPTOISO 2.5KV 1CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V, 10V
Part Status: Obsolete
Number of Channels: 1
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PVI5050 PVI%20Series.pdf
PVI5050
Hersteller: Infineon Technologies
Description: IC ISO PHOTOVOLTC 5V-OUT 8-DIP
Number of Channels: 1
Part Status: Obsolete
Voltage - Output (Max): 5V
Supplier Device Package: 8-DIP
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 5µA
Input Type: DC
Mounting Type: Through Hole
Output Type: Photovoltaic
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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PVA1354 pva13.pdf
PVA1354
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 300MA 0-100V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-DIP Modified
Load Current: 300 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
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PVA3354 pva33.pdf
PVA3354
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 130MA 0-300V
On-State Resistance (Max): 24 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Obsolete
Supplier Device Package: 8-DIP Modified
Load Current: 130 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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IRF520N IRF520N.pdf
IRF520N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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94-2304 IRL2203N.pdf
94-2304
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 116A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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IRL3803 irl3803pbf.pdf?fileId=5546d462533600a40153565f80172554
IRL3803
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Produkt ist nicht verfügbar
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IRFL4105TR IRFL4105.pdf
IRFL4105TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRLL3303TR irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd
IRLL3303TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Produkt ist nicht verfügbar
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IRFP044N irfp044npbf.pdf?fileId=5546d462533600a40153562820731fc2
IRFP044N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 53A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Produkt ist nicht verfügbar
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IRFP054N description irfp054npbf.pdf?fileId=5546d462533600a40153562831f21fc6
IRFP054N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 81A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRFR1205 description IRFR%2CU1205.pdf
IRFR1205
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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94-4762 irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9
94-4762
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFL4105TR IRFL4105.pdf
IRFL4105TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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IRFL4310TR IRFL4310.pdf
IRFL4310TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.6A SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
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IRLL2705TR IRLL2705.pdf
IRLL2705TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.8A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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94-2310 irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
94-2310
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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PVDZ172N description pvdz172.pdf?fileId=5546d462533600a401535683ba592934
PVDZ172N
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Produkt ist nicht verfügbar
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PVAZ172N pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172N
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Produkt ist nicht verfügbar
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PVN012 pvn012.pdf?fileId=5546d462533600a401535683f185294d
PVN012
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
Produkt ist nicht verfügbar
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PVG612 description pvg612.pdf?fileId=5546d462533600a401535683c1892937
PVG612
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 1 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Produkt ist nicht verfügbar
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PVT422 pvt422.pdf?fileId=5546d462533600a401535684473f2973
PVT422
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Produkt ist nicht verfügbar
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