Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149669) > Seite 484 nach 2495
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XMC1302T028X0016ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28TSSOPPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 16KB (16K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD22522RCLEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD2252-2EPPackaging: Bulk Voltage - Input: 8V ~ 16V Contents: Board(s) Current - Output / Channel: 120mA Utilized IC / Part: TLD2252-2EP Supplied Contents: Board(s) Outputs and Type: 2 Non-Isolated Outputs |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP065N03LGXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
Produkt ist nicht verfügbar |
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EVALIM67D130FLEXKITTOBO1 | Infineon Technologies |
Description: EVAL KIT FOR IM67D130Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM67D130 Supplied Contents: Board(s) Embedded: No Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR431UXTSA1 | Infineon Technologies |
Description: IC LED DRV LIN NO 36.5MA SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 36.5mA Internal Switch(s): Yes Supplier Device Package: PG-SOT23-6 Dimming: No Voltage - Supply (Min): 6V Voltage - Supply (Max): 42 V Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR431UXTSA1 | Infineon Technologies |
Description: IC LED DRV LIN NO 36.5MA SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 36.5mA Internal Switch(s): Yes Supplier Device Package: PG-SOT23-6 Dimming: No Voltage - Supply (Min): 6V Voltage - Supply (Max): 42 V Part Status: Active |
auf Bestellung 6935 Stücke: Lieferzeit 10-14 Tag (e) |
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| TTB6C95N16LOF | Infineon Technologies |
Description: SCR MODULE 1.6KV 75A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Bridge, 3-Phase - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz Number of SCRs, Diodes: 6 SCRs Current - On State (It (AV)) (Max): 130 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 75 A Voltage - Off State: 1.6 kV |
auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54220LBAAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm, 27mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BTS54220LBAAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm, 27mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BTS54220LBEAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 5A Ratio - Input:Output: 1:2 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive |
Produkt ist nicht verfügbar |
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BTS54220LBFAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 5A Ratio - Input:Output: 1:2 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
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IDP12E120XKSA1390 | Infineon Technologies |
Description: IDP12E120 - SILICON POWER DIODE |
Produkt ist nicht verfügbar |
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WLC1115-68LQXQ | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Tray Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
auf Bestellung 254 Stücke: Lieferzeit 10-14 Tag (e) |
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WLC1115-68LQXQT | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Tape & Reel (TR) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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WLC1115-68LQXQT | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Cut Tape (CT) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
auf Bestellung 2425 Stücke: Lieferzeit 10-14 Tag (e) |
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IPS80R1K4P7 | Infineon Technologies |
Description: IPS80R1K4 - 800V COOLMOS N-CHANN |
Produkt ist nicht verfügbar |
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IPS80R750P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 7A TO251-3 |
auf Bestellung 2880 Stücke: Lieferzeit 10-14 Tag (e) |
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IPS80R2K4P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 2.5A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V |
auf Bestellung 2945 Stücke: Lieferzeit 10-14 Tag (e) |
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| FZ1600R17HP4_B21 | Infineon Technologies |
Description: FZ1600R17 - IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA NTC Thermistor: No Supplier Device Package: AG-IHMB130-2-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 130 nF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SAB-80C515A-N18 | Infineon Technologies |
Description: LEGACY 8-BIT MCUPackaging: Bulk Package / Case: 68-LCC (J-Lead) Mounting Type: Surface Mount Speed: 18MHz RAM Size: 1.25K x 8 Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: 80C515 Data Converters: A/D 8x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: UART/USART Peripherals: POR, WDT Supplier Device Package: P-LCC-68 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IPF05N03LAG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO252-3-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2235PV4.1IPAT | Infineon Technologies |
Description: ISDN PRIMARY ACCESS TRANSCEICERPackaging: Bulk Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Function: ISDN Interface: ISDN Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 190mA Supplier Device Package: P-DIP-28 Part Status: Active Number of Circuits: 32 |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2075PV1.3-IDEC | Infineon Technologies |
Description: ISDN D-CHANNEL EXCH. CONTROLLERPackaging: Bulk Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Function: ISDN Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 10mA Supplier Device Package: P-DIP-28 Part Status: Active |
auf Bestellung 1822 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS810D1EJV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 100MA 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.65V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Qualification: AEC-Q100 |
auf Bestellung 4067 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC883N03LS G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC026N02KSG | Infineon Technologies |
Description: BSC026N02 - 12V-300V N-CHANNEL PPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
auf Bestellung 27190 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC0503NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 22A/88A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
auf Bestellung 9378 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC883N03MSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V |
auf Bestellung 73343 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC883N03LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
auf Bestellung 14999 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE94104EPXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 2A TSDSO-14Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 825mOhm LS, 825mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2A Technology: Power MOSFET Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SAB-C501G-1EM | Infineon Technologies |
Description: LEGACY 8-BIT MCUPackaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: OTP Core Processor: 8051 Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: UART/USART Peripherals: POR Supplier Device Package: P-MQFP-44 Part Status: Active Number of I/O: 32 DigiKey Programmable: Not Verified |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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CYW170-01SXC | Infineon Technologies |
Description: IC CLK ZDB 133MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Input: Clock Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BFP420H6740XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 160mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BFP420H6740XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 160mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
auf Bestellung 8086 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGS4615DTRRPBF | Infineon Technologies |
Description: IGBT 600V 23A 99W D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 30ns/95ns Switching Energy: 70µJ (on), 145µJ (off) Test Condition: 400V, 8A, 47Ohm, 15V Gate Charge: 19 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 24 A Power - Max: 99 W |
Produkt ist nicht verfügbar |
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IPW90R120C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.9mA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |
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DEMOBGT60TR13CTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT60TR13CPackaging: Bulk For Use With/Related Products: BGT60TR13C Sensitivity: 60GHz Frequency: 60GHz Type: Transceiver; RADAR Contents: Board(s) Sensor Type: Radar Utilized IC / Part: BGT60TR13C Supplied Contents: Board(s) |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL716SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 2.5A TSOP-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 218µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSL373SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 2A TSOP-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSL806NH6327XTSA1 | Infineon Technologies |
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSZ011NE2LS5IATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 35A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V |
auf Bestellung 6901 Stücke: Lieferzeit 10-14 Tag (e) |
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ISK024NE2LM5AULA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-VSON-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: 6-PQFN Dual (2x2) Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISK024NE2LM5AULA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-VSON-6Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: 6-PQFN Dual (2x2) Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V |
auf Bestellung 7925 Stücke: Lieferzeit 10-14 Tag (e) |
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DDB6U144N16RBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-8111Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: 150°C (TJ) Technology: Standard Supplier Device Package: AG-ECONO2A Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC037N08NS5TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 22A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 72µA Supplier Device Package: PG-TDSON-8-7 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V |
auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT165E6874HTMA1 | Infineon Technologies |
Description: DIODE SCHOTT 40V 750MA PGSOD3232Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA Current - Reverse Leakage @ Vr: 50 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESD24VL1B-02LRHE6327 | Infineon Technologies |
Description: MULTI-PURPOSE ESD DEVICEPackaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: USB Capacitance @ Frequency: 2.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.3V Voltage - Clamping (Max) @ Ipp: 55V (Typ) Power Line Protection: No Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD24VL1B02LRHE6327XTSA1 | Infineon Technologies |
Description: MULTI-PURPOSE ESD DEVICEPackaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: USB Capacitance @ Frequency: 2.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.3V Voltage - Clamping (Max) @ Ipp: 55V (Typ) Power Line Protection: No |
auf Bestellung 270000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS4002S-02LRHE6327 | Infineon Technologies |
Description: DIODE SCHOTT 40V 200MA PGTSLP217Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-TSLP-2-17 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
auf Bestellung 9920 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD3V3U1U02LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESD300B102LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 18A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10.5V (Typ) Power - Peak Pulse: 260W Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESD300B102LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 18A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10.5V (Typ) Power - Peak Pulse: 260W Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS3005S02LRHE6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTT 30V 500MA PGTSLP217Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 15pF @ 5V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: PG-TSLP-2-17 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SAKXC2733X20F66LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 160KB (160K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 19x8/10/12b SAR Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-24 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SAKXC2734X40F80LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x8/10b SAR Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-24 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SAFXE162FN40F80LAAFXQSA1 | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-22 Part Status: Active Number of I/O: 40 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SAK-XC2734X40F80LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x8/10b SAR Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-24 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SAKXC2733X20F66LRAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 160KB (160K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 19x8/10/12b SAR Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-24 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SAF-XE162FN40F80LAAFXQSA1 | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-22 Part Status: Active Number of I/O: 40 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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REFILD8150DC15ASMDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ILD8150Features: Dimmable Packaging: Bulk Voltage - Input: 8V ~ 80V Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: ILD8150 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| XMC1302T028X0016ABXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.56 EUR |
| 10+ | 2.64 EUR |
| 25+ | 2.41 EUR |
| 100+ | 2.16 EUR |
| 250+ | 2.04 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.91 EUR |
| TLD22522RCLEVALTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 192.17 EUR |
| IPP065N03LGXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EVALIM67D130FLEXKITTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 50.6 EUR |
| BCR431UXTSA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
| BCR431UXTSA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
auf Bestellung 6935 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 0.6 EUR |
| 43+ | 0.42 EUR |
| 48+ | 0.37 EUR |
| 100+ | 0.32 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.27 EUR |
| TTB6C95N16LOF |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 170.85 EUR |
| BTS54220LBAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BTS54220LBAAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS54220LBEAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS54220LBFAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IDP12E120XKSA1390 |
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Hersteller: Infineon Technologies
Description: IDP12E120 - SILICON POWER DIODE
Description: IDP12E120 - SILICON POWER DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WLC1115-68LQXQ |
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Hersteller: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.13 EUR |
| 10+ | 6.98 EUR |
| 25+ | 6.44 EUR |
| 80+ | 5.93 EUR |
| 230+ | 5.59 EUR |
| WLC1115-68LQXQT |
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Hersteller: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 4.63 EUR |
| WLC1115-68LQXQT |
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Hersteller: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.22 EUR |
| 10+ | 6.29 EUR |
| 25+ | 5.8 EUR |
| 100+ | 5.27 EUR |
| 250+ | 5.02 EUR |
| 500+ | 4.86 EUR |
| 1000+ | 4.74 EUR |
| IPS80R1K4P7 |
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Hersteller: Infineon Technologies
Description: IPS80R1K4 - 800V COOLMOS N-CHANN
Description: IPS80R1K4 - 800V COOLMOS N-CHANN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPS80R750P7AKMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
Description: MOSFET N-CH 800V 7A TO251-3
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 420+ | 1.3 EUR |
| IPS80R2K4P7AKMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 2945 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 848+ | 0.57 EUR |
| FZ1600R17HP4_B21 |
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Hersteller: Infineon Technologies
Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1707.83 EUR |
| SAB-80C515A-N18 |
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Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPF05N03LAG |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 547+ | 0.93 EUR |
| PEB2235PV4.1IPAT |
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Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 28.42 EUR |
| PEB2075PV1.3-IDEC |
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Hersteller: Infineon Technologies
Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 35.44 EUR |
| TLS810D1EJV33XUMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 4067 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.48 EUR |
| 10+ | 1.81 EUR |
| 25+ | 1.65 EUR |
| 100+ | 1.46 EUR |
| 250+ | 1.37 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.27 EUR |
| BSC883N03LS G |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 916+ | 0.58 EUR |
| BSC026N02KSG |
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Hersteller: Infineon Technologies
Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
auf Bestellung 27190 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 363+ | 1.46 EUR |
| BSC0503NSIATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 9378 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.76 EUR |
| 11+ | 1.76 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.85 EUR |
| 2000+ | 0.78 EUR |
| BSC883N03MSG |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 73343 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 799+ | 0.63 EUR |
| BSC883N03LSG |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
auf Bestellung 14999 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 916+ | 0.56 EUR |
| TLE94104EPXUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.24 EUR |
| 10+ | 2.39 EUR |
| 25+ | 2.17 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.7 EUR |
| SAB-C501G-1EM |
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Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 6.66 EUR |
| CYW170-01SXC |
Hersteller: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFP420H6740XTSA1 |
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Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| BFP420H6740XTSA1 |
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Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 8086 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 34+ | 0.52 EUR |
| 38+ | 0.47 EUR |
| 100+ | 0.4 EUR |
| 250+ | 0.37 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.34 EUR |
| IRGS4615DTRRPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW90R120C3FKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DEMOBGT60TR13CTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Supplied Contents: Board(s)
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Supplied Contents: Board(s)
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 339.56 EUR |
| 10+ | 338.77 EUR |
| BSL716SNH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSL373SNH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP-6
Description: MOSFET N-CH 100V 2A TSOP-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSL806NH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ011NE2LS5IATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 6901 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 10+ | 2.32 EUR |
| 25+ | 2.19 EUR |
| 100+ | 2.01 EUR |
| 250+ | 1.9 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.76 EUR |
| ISK024NE2LM5AULA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.59 EUR |
| 6000+ | 0.57 EUR |
| ISK024NE2LM5AULA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 7925 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 15+ | 1.17 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.63 EUR |
| DDB6U144N16RBPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC037N08NS5TATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.45 EUR |
| 10+ | 4.03 EUR |
| 25+ | 3.59 EUR |
| 100+ | 3.23 EUR |
| 250+ | 2.87 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.08 EUR |
| BAT165E6874HTMA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 750MA PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 40V 750MA PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD24VL1B-02LRHE6327 |
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Hersteller: Infineon Technologies
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
Part Status: Active
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4501+ | 0.12 EUR |
| ESD24VL1B02LRHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4157+ | 0.11 EUR |
| BAS4002S-02LRHE6327 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 200MA PGTSLP217
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTT 40V 200MA PGTSLP217
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 9920 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3406+ | 0.15 EUR |
| ESD3V3U1U02LRHE6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD300B102LRHE6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD300B102LRHE6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS3005S02LRHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTT 30V 500MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAKXC2733X20F66LAAKXUMA1 |
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Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAKXC2734X40F80LAAKXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAFXE162FN40F80LAAFXQSA1 |
![]() |
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAK-XC2734X40F80LAAKXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAKXC2733X20F66LRAAKXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAF-XE162FN40F80LAAFXQSA1 |
![]() |
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| REFILD8150DC15ASMDTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Bulk
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Bulk
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 117.78 EUR |







































