| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXDI614CI | IXYS |
Driver 14A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI614CI IXYS UIIXDI614ciAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| IXDI630CI | IXYS |
Driver 30A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI630CI UIIXDI630ciAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| IXDN604PI | IXYS |
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP IXDN604PI UIIXDN604piAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| IXDN604SIATR | IXYS |
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN604SIA IXDN604SIATR IXDN604SIA UIIXDN604siaAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| IXDN609SIA | IXYS |
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN609SIATR UIIXDN609siaAnzahl je Verpackung: 5 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| IXDN609YI | IXYS |
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDN609YI UIIXDN609yiAnzahl je Verpackung: 2 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| IXDN614SI | IXYS |
Driver; 14A; 1-OUT Low Side Non-Inv; 1-CH; 4,5V~35V; -40°C~125°C; Substitute: IXDN614SI; IXDN614SITR; IXDN614SITR UIIXDN614siAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC3703CTR | IXYS |
Trans MOSFET N-CH Si 250V Automotive 4-Pin(3+Tab) SOT-89 Tube CPC3703CTR CPC3703C IXYS TCPC3703cAnzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| IXGR48N60C3D1 | IXYS |
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1Anzahl je Verpackung: 2 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CLA30E1200HB | IXYS |
Thyristor; 47A; 1200V; 28mA; CLA30E1200HB TYCLA30e1200hbAnzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CLA30E1200PB | IXYS |
Thyristor; 47A; 1200V; 30mA; CLA30E1200PB TYCLA30e1200pbAnzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CLA80E1200HF | IXYS |
Thyristor; 126A; 1200V; 38mA; CLA80E1200HF TYCLA80e1200hfAnzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CS19-08ho1 | IXYS |
Thyristor; 31A; 800V; 28mA; CS19-08HO1 TYCS19-08ho1Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CS19-12HO1 | IXYS |
It=31A; Vdrm=1,2kV; Igt=50mA; CS19-12HO1 IXYS TYCS19-12ho1Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CS20-14IO1 | IXYS |
It=31A; Vdrm=1,4kV; Igt=80mA CS20-14IO1 IXYS TYCS20-14io1Anzahl je Verpackung: 2 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CS20-16IO1 | IXYS |
It=31A; Vdrm=1,6kV; Igt=80mA CS20-16IO1 IXYS TYCS20-16io1Anzahl je Verpackung: 2 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| MCC26-12io8B | IXYS |
Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A MCC26-12IO8B IXYS MO MCC26-12IO8BAnzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1303G | IXYS |
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP CPC1303G OOCPC1303gAnzahl je Verpackung: 10 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1303GR | IXYS |
Single-Channel CTR 200-2500% Vce 30V Uiso 5,0kV Transistor CPC1303GR , CPC1303GRTR CPC1303GR IXYS OOCPC1303grAnzahl je Verpackung: 10 Stücke |
auf Bestellung 278 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1006N | IXYS |
SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N IXYS SSR P CPC1006NAnzahl je Verpackung: 10 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1008NTR | IXYS |
SPST-NO; 50mA; SSR; 1 phase; 1,5kV; 2ms 4,09x3,81x2,03mm CPC1008N IXYS P CPC1008N IXYSAnzahl je Verpackung: 20 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1014NTR | IXYS |
400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014N P CPC1014NAnzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1017NTR | IXYS |
60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017NAnzahl je Verpackung: 50 Stücke |
auf Bestellung 1500 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1017NTR | IXYS |
60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017NAnzahl je Verpackung: 50 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1018NTR | IXYS |
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018NAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| CPC1018NTR | IXYS |
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018NAnzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
IXFH50N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 1.04kW Case: TO247-3 On-state resistance: 0.16Ω Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXFQ50N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 1.04kW Case: TO3P On-state resistance: 0.16Ω Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXFH60N60X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 890W Case: TO247-3 On-state resistance: 55mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXFH60N60X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 175ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
IXFQ60N60X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 890W Case: TO3P On-state resistance: 55mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXFT60N60X3HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 175ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
IXGH60N60C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO247-3 Mounting: THT Gate charge: 115nC Kind of package: tube Collector current: 60A Pulsed collector current: 300A Collector-emitter voltage: 600V Turn-on time: 54ns Turn-off time: 198ns Gate-emitter voltage: ±20V |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXGT60N60C3D1 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO268 Mounting: SMD Gate charge: 115nC Kind of package: tube Collector current: 60A Pulsed collector current: 300A Collector-emitter voltage: 600V Turn-on time: 54ns Turn-off time: 198ns Gate-emitter voltage: ±20V |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXKH24N60C5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 250W Case: TO247-3 On-state resistance: 0.165Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXKP24N60C5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 250W Case: TO220AB On-state resistance: 0.165Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXKP24N60C5M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXTP4N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Technology: X2-Class Reverse recovery time: 160ns |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXTA8N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXYP10N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 18nC Turn-on time: 44ns Turn-off time: 128ns Collector current: 10A Pulsed collector current: 54A Gate-emitter voltage: ±20V Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXXH110N65C4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 880W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 167nC Turn-on time: 71ns Turn-off time: 160ns Collector current: 110A Gate-emitter voltage: ±20V Pulsed collector current: 600A Collector-emitter voltage: 650V |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXXK110N65B4H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Power dissipation: 880W Case: TO264 Mounting: THT Gate charge: 183nC Kind of package: tube Technology: GenX4™; Trench; XPT™ Turn-on time: 65ns Turn-off time: 250ns Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 570A Collector-emitter voltage: 650V |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXYA15N65C3D1 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 19nC Kind of package: tube Turn-off time: 102ns Turn-on time: 36ns Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 80A Collector-emitter voltage: 650V |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXYP15N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO220-3 Mounting: THT Gate charge: 19nC Kind of package: tube Collector current: 15A Gate-emitter voltage: ±20V Turn-on time: 36ns Pulsed collector current: 80A Collector-emitter voltage: 650V Turn-off time: 122ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXYP15N65C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO220-3 Mounting: THT Gate charge: 19nC Kind of package: tube Collector current: 15A Gate-emitter voltage: ±20V Turn-on time: 36ns Pulsed collector current: 80A Collector-emitter voltage: 650V Turn-off time: 102ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXYP15N65C3D1M | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 57W Case: TO220FP Mounting: THT Gate charge: 19nC Kind of package: tube Collector current: 9A Gate-emitter voltage: ±20V Turn-on time: 36ns Pulsed collector current: 80A Collector-emitter voltage: 650V Turn-off time: 122ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
DSS16-0045A | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.57V Max. forward impulse current: 280A Kind of package: tube Power dissipation: 105W Max. load current: 35A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| DSS16-0045AS-TUB | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.57V Max. forward impulse current: 280A Kind of package: tube Power dissipation: 105W Max. load current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
IXFA20N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXFH20N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 272 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXFP20N50P3M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 58W Case: TO220FP On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXFQ20N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO3P On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXTA4N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Technology: X2-Class Reverse recovery time: 160ns |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IXTY4N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Technology: X2-Class Reverse recovery time: 160ns |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| IXKC40N60C | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 800ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
IXKN40N60C | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 290W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 70mΩ Gate charge: 250nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 650ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXKR40N60C | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 280W Case: ISOPLUS247™ On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos Reverse recovery time: 650ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
CPC1008N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source Manufacturer series: OptoMOS Mounting: SMT Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Control current max.: 50mA Max. operating current: 150mA On-state resistance: 8Ω Insulation voltage: 1.5kV Case: SOP4 Turn-off time: 1ms Turn-on time: 2ms |
auf Bestellung 2889 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
CPC1008NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
IXFP5N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 33.4nC Power dissipation: 250W |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXDI614CI |
![]() |
Hersteller: IXYS
Driver 14A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI614CI IXYS UIIXDI614ci
Anzahl je Verpackung: 2 Stücke
Driver 14A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI614CI IXYS UIIXDI614ci
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 10.16 EUR |
| IXDI630CI |
![]() |
Hersteller: IXYS
Driver 30A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI630CI UIIXDI630ci
Anzahl je Verpackung: 2 Stücke
Driver 30A 1-OUT Low Side Inv 5-Pin(5+Tab) TO-220 IXDI630CI UIIXDI630ci
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.63 EUR |
| IXDN604PI |
![]() |
Hersteller: IXYS
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP IXDN604PI UIIXDN604pi
Anzahl je Verpackung: 10 Stücke
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP IXDN604PI UIIXDN604pi
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 3.5 EUR |
| IXDN604SIATR |
![]() |
Hersteller: IXYS
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN604SIA IXDN604SIATR IXDN604SIA UIIXDN604sia
Anzahl je Verpackung: 10 Stücke
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN604SIA IXDN604SIATR IXDN604SIA UIIXDN604sia
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 3.82 EUR |
| IXDN609SIA |
![]() |
Hersteller: IXYS
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN609SIATR UIIXDN609sia
Anzahl je Verpackung: 5 Stücke
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC IXDN609SIATR UIIXDN609sia
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 3.11 EUR |
| IXDN609YI |
![]() |
Hersteller: IXYS
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDN609YI UIIXDN609yi
Anzahl je Verpackung: 2 Stücke
Gate Drivers; Low-Side; Ultrafast MOSFET; 1/1; 9A; 22ns; 4.5V~35V; -55°C~150°C; IXDN609YI UIIXDN609yi
Anzahl je Verpackung: 2 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 7.88 EUR |
| IXDN614SI |
![]() |
Hersteller: IXYS
Driver; 14A; 1-OUT Low Side Non-Inv; 1-CH; 4,5V~35V; -40°C~125°C; Substitute: IXDN614SI; IXDN614SITR; IXDN614SITR UIIXDN614si
Anzahl je Verpackung: 2 Stücke
Driver; 14A; 1-OUT Low Side Non-Inv; 1-CH; 4,5V~35V; -40°C~125°C; Substitute: IXDN614SI; IXDN614SITR; IXDN614SITR UIIXDN614si
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 10.04 EUR |
| CPC3703CTR |
![]() |
Hersteller: IXYS
Trans MOSFET N-CH Si 250V Automotive 4-Pin(3+Tab) SOT-89 Tube CPC3703CTR CPC3703C IXYS TCPC3703c
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH Si 250V Automotive 4-Pin(3+Tab) SOT-89 Tube CPC3703CTR CPC3703C IXYS TCPC3703c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 1.53 EUR |
| IXGR48N60C3D1 |
![]() |
Hersteller: IXYS
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1
Anzahl je Verpackung: 2 Stücke
Trans IGBT Chip N-CH 600V 56A 125000mW 3-Pin(3+Tab) ISOPLUS 247 IXGR48N60C3D1 TIXGR48n60c3d1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 26.94 EUR |
| CLA30E1200HB |
![]() |
Hersteller: IXYS
Thyristor; 47A; 1200V; 28mA; CLA30E1200HB TYCLA30e1200hb
Anzahl je Verpackung: 5 Stücke
Thyristor; 47A; 1200V; 28mA; CLA30E1200HB TYCLA30e1200hb
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 7.32 EUR |
| CLA30E1200PB |
![]() |
Hersteller: IXYS
Thyristor; 47A; 1200V; 30mA; CLA30E1200PB TYCLA30e1200pb
Anzahl je Verpackung: 5 Stücke
Thyristor; 47A; 1200V; 30mA; CLA30E1200PB TYCLA30e1200pb
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 7.42 EUR |
| CLA80E1200HF |
![]() |
Hersteller: IXYS
Thyristor; 126A; 1200V; 38mA; CLA80E1200HF TYCLA80e1200hf
Anzahl je Verpackung: 2 Stücke
Thyristor; 126A; 1200V; 38mA; CLA80E1200HF TYCLA80e1200hf
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.31 EUR |
| CS19-08ho1 |
![]() |
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 5.07 EUR |
| CS19-12HO1 | ![]() |
![]() |
Hersteller: IXYS
It=31A; Vdrm=1,2kV; Igt=50mA; CS19-12HO1 IXYS TYCS19-12ho1
Anzahl je Verpackung: 10 Stücke
It=31A; Vdrm=1,2kV; Igt=50mA; CS19-12HO1 IXYS TYCS19-12ho1
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 5.09 EUR |
| CS20-14IO1 |
![]() |
Hersteller: IXYS
It=31A; Vdrm=1,4kV; Igt=80mA CS20-14IO1 IXYS TYCS20-14io1
Anzahl je Verpackung: 2 Stücke
It=31A; Vdrm=1,4kV; Igt=80mA CS20-14IO1 IXYS TYCS20-14io1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 10.67 EUR |
| CS20-16IO1 |
![]() |
Hersteller: IXYS
It=31A; Vdrm=1,6kV; Igt=80mA CS20-16IO1 IXYS TYCS20-16io1
Anzahl je Verpackung: 2 Stücke
It=31A; Vdrm=1,6kV; Igt=80mA CS20-16IO1 IXYS TYCS20-16io1
Anzahl je Verpackung: 2 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 10.57 EUR |
| MCC26-12io8B |
![]() |
Hersteller: IXYS
Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A MCC26-12IO8B IXYS MO MCC26-12IO8B
Anzahl je Verpackung: 1 Stücke
Module; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; Ifsm: 440A MCC26-12IO8B IXYS MO MCC26-12IO8B
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 63.31 EUR |
| CPC1303G |
![]() |
Hersteller: IXYS
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP CPC1303G OOCPC1303g
Anzahl je Verpackung: 10 Stücke
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP CPC1303G OOCPC1303g
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 1.76 EUR |
| CPC1303GR |
![]() |
Hersteller: IXYS
Single-Channel CTR 200-2500% Vce 30V Uiso 5,0kV Transistor CPC1303GR , CPC1303GRTR CPC1303GR IXYS OOCPC1303gr
Anzahl je Verpackung: 10 Stücke
Single-Channel CTR 200-2500% Vce 30V Uiso 5,0kV Transistor CPC1303GR , CPC1303GRTR CPC1303GR IXYS OOCPC1303gr
Anzahl je Verpackung: 10 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 2.67 EUR |
| CPC1006N |
![]() |
Hersteller: IXYS
SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N IXYS SSR P CPC1006N
Anzahl je Verpackung: 10 Stücke
SPST-NO; 60VDC; 50mA; SOP-4 CPC1006NTR CPC1006N IXYS SSR P CPC1006N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 2.72 EUR |
| CPC1008NTR |
![]() |
Hersteller: IXYS
SPST-NO; 50mA; SSR; 1 phase; 1,5kV; 2ms 4,09x3,81x2,03mm CPC1008N IXYS P CPC1008N IXYS
Anzahl je Verpackung: 20 Stücke
SPST-NO; 50mA; SSR; 1 phase; 1,5kV; 2ms 4,09x3,81x2,03mm CPC1008N IXYS P CPC1008N IXYS
Anzahl je Verpackung: 20 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 2.57 EUR |
| CPC1014NTR |
![]() |
Hersteller: IXYS
400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014N P CPC1014N
Anzahl je Verpackung: 10 Stücke
400mA; 60V AC/DC; SPST-NO; SOP-4; 4,09 x 3,81 x 2,03mm; SSR; CPC1014N P CPC1014N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 3.21 EUR |
| CPC1017NTR |
![]() |
Hersteller: IXYS
60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017N
Anzahl je Verpackung: 50 Stücke
60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017N
Anzahl je Verpackung: 50 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 2.31 EUR |
| CPC1017NTR |
![]() |
Hersteller: IXYS
60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017N
Anzahl je Verpackung: 50 Stücke
60VDC; SPST; 50mA; MOSFET; SMD/SMT 400mW; 4 x 3,8 x 2,1mm; pakowanie: tuba 100pcs ; CPC1017NTR 2Kpcs/reel ; CPC1017N; CPC1017NTR; CPC1017N; CPC1017NTR P CPC1017N
Anzahl je Verpackung: 50 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 2.31 EUR |
| CPC1018NTR |
![]() |
Hersteller: IXYS
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018N
Anzahl je Verpackung: 10 Stücke
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 5.96 EUR |
| CPC1018NTR |
![]() |
Hersteller: IXYS
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018N
Anzahl je Verpackung: 10 Stücke
Relay SSR 50mA 1.5V DC-IN 0.6A 60V AC/DC-OUT 4-Pin SOP Tube CPC1018NTR CPC1018N P CPC1018N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 5.96 EUR |
| IXFH50N60P3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.43 EUR |
| 8+ | 9.67 EUR |
| 10+ | 8.62 EUR |
| 30+ | 8.35 EUR |
| IXFQ50N60P3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.74 EUR |
| 10+ | 10.54 EUR |
| 30+ | 8.19 EUR |
| IXFH60N60X |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH60N60X3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFQ60N60X |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT60N60X3HV |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH60N60C3D1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 198ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 198ns
Gate-emitter voltage: ±20V
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 16.22 EUR |
| 6+ | 13.64 EUR |
| 10+ | 12.17 EUR |
| 30+ | 11.57 EUR |
| IXGT60N60C3D1 |
![]() |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 198ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 54ns
Turn-off time: 198ns
Gate-emitter voltage: ±20V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.64 EUR |
| 11+ | 6.75 EUR |
| 12+ | 6.06 EUR |
| IXKH24N60C5 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO247-3
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKP24N60C5 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKP24N60C5M |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP4N65X2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 160ns
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 41+ | 1.74 EUR |
| 50+ | 1.62 EUR |
| IXTA8N65X2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.8 EUR |
| 34+ | 2.16 EUR |
| IXYP10N65C3 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 18nC
Turn-on time: 44ns
Turn-off time: 128ns
Collector current: 10A
Pulsed collector current: 54A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 18nC
Turn-on time: 44ns
Turn-off time: 128ns
Collector current: 10A
Pulsed collector current: 54A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXH110N65C4 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 167nC
Turn-on time: 71ns
Turn-off time: 160ns
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 167nC
Turn-on time: 71ns
Turn-off time: 160ns
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 650V
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.81 EUR |
| 6+ | 12.66 EUR |
| 10+ | 11.2 EUR |
| 30+ | 10.1 EUR |
| IXXK110N65B4H1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 65ns
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Power dissipation: 880W
Case: TO264
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 65ns
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 570A
Collector-emitter voltage: 650V
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 25.02 EUR |
| 4+ | 23.75 EUR |
| 5+ | 22.01 EUR |
| 10+ | 18.38 EUR |
| IXYA15N65C3D1 |
![]() |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-off time: 102ns
Turn-on time: 36ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-off time: 102ns
Turn-on time: 36ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.19 EUR |
| 25+ | 2.89 EUR |
| 29+ | 2.53 EUR |
| 50+ | 2.29 EUR |
| IXYP15N65C3 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-on time: 36ns
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 122ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-on time: 36ns
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 122ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYP15N65C3D1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-on time: 36ns
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 102ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-on time: 36ns
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 102ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYP15N65C3D1M |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 57W
Case: TO220FP
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Turn-on time: 36ns
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 122ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 57W
Case: TO220FP
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Turn-on time: 36ns
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 122ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSS16-0045A |
![]() |
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| DSS16-0045AS-TUB |
![]() |
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 16A; tube; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. forward impulse current: 280A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA20N50P3 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| IXFH20N50P3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.51 EUR |
| 12+ | 6.18 EUR |
| 14+ | 5.48 EUR |
| 30+ | 4.63 EUR |
| IXFP20N50P3M |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFQ20N50P3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO3P
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.89 EUR |
| 16+ | 4.5 EUR |
| 30+ | 3.99 EUR |
| 60+ | 3.98 EUR |
| IXTA4N65X2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 160ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| IXTY4N65X2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 160ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| IXKC40N60C | ![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKN40N60C |
![]() |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKR40N60C |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 280W; ISOPLUS247™; 650ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 280W
Case: ISOPLUS247™
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Reverse recovery time: 650ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1008N |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Insulation voltage: 1.5kV
Case: SOP4
Turn-off time: 1ms
Turn-on time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Insulation voltage: 1.5kV
Case: SOP4
Turn-off time: 1ms
Turn-on time: 2ms
auf Bestellung 2889 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.75 EUR |
| 29+ | 2.5 EUR |
| 30+ | 2.42 EUR |
| 31+ | 2.32 EUR |
| 32+ | 2.29 EUR |
| 50+ | 2.23 EUR |
| CPC1008NTR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP5N100P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33.4nC
Power dissipation: 250W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33.4nC
Power dissipation: 250W
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 15+ | 4.78 EUR |
| 50+ | 3.63 EUR |














